216 research outputs found

    Mechanism of transition to turbulence in a circular cylinder wake in a channel

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    © 2017 The Authors, published by EDP Sciences. Transition to turbulence in the circular cylinder wake has been studied experimentally and numerically at growing Reynolds number. Good agreement of calculation results with the flow visualization and measurements of instantaneous vector fields of velocity and vorticity has been demonstrated. The growing Reynolds number is shown to make large-scale vortex generation onset move upstream. It also triggers the transition to 3D flow pattern in the cylinder wake. This process is accompanied by non-monotonous behavior of the profiles of velocity and its turbulent fluctuations at equal distances from the cylinder. Non-monotonous behavior of the cylinder drag has been revealed for the Reynolds numbers ranging from 120 to 300

    Superconducting parallel nanowire detector with photon number resolving functionality

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    We present a new photon number resolving detector (PNR), the Parallel Nanowire Detector (PND), which uses spatial multiplexing on a subwavelength scale to provide a single electrical output proportional to the photon number. The basic structure of the PND is the parallel connection of several NbN superconducting nanowires (100 nm-wide, few nm-thick), folded in a meander pattern. Electrical and optical equivalents of the device were developed in order to gain insight on its working principle. PNDs were fabricated on 3-4 nm thick NbN films grown on sapphire (substrate temperature TS=900C) or MgO (TS=400C) substrates by reactive magnetron sputtering in an Ar/N2 gas mixture. The device performance was characterized in terms of speed and sensitivity. The photoresponse shows a full width at half maximum (FWHM) as low as 660ps. PNDs showed counting performance at 80 MHz repetition rate. Building the histograms of the photoresponse peak, no multiplication noise buildup is observable and a one photon quantum efficiency can be estimated to be QE=3% (at 700 nm wavelength and 4.2 K temperature). The PND significantly outperforms existing PNR detectors in terms of simplicity, sensitivity, speed, and multiplication noise

    Resonant Terahertz Detection Using Graphene Plasmons

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    Plasmons, collective oscillations of electron systems, can efficiently couple light and electric current, and thus can be used to create sub-wavelength photodetectors, radiation mixers, and on-chip spectrometers. Despite considerable effort, it has proven challenging to implement plasmonic devices operating at terahertz frequencies. The material capable to meet this challenge is graphene as it supports long-lived electrically-tunable plasmons. Here we demonstrate plasmon-assisted resonant detection of terahertz radiation by antenna-coupled graphene transistors that act as both plasmonic Fabry-Perot cavities and rectifying elements. By varying the plasmon velocity using gate voltage, we tune our detectors between multiple resonant modes and exploit this functionality to measure plasmon wavelength and lifetime in bilayer graphene as well as to probe collective modes in its moir\'e minibands. Our devices offer a convenient tool for further plasmonic research that is often exceedingly difficult under non-ambient conditions (e.g. cryogenic temperatures and strong magnetic fields) and promise a viable route for various photonic applications.Comment: 19 pages, 12 figure

    Effect of the wire width on the intrinsic detection efficiency of superconducting-nanowire single-photon detectors

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    Thorough spectral study of the intrinsic single-photon detection efficiency in superconducting TaN and NbN nanowires with different widths shows that the experimental cut-off in the efficiency at near-infrared wavelengths is most likely caused by the local deficiency of Cooper pairs available for current transport. For both materials the reciprocal cut-off wavelength scales with the wire width whereas the scaling factor quantitatively agrees with the hot-spot detection models. Comparison of the experimental data with vortex-assisted detection scenarios shows that these models predict a stronger dependence of the cut-off wavelength on the wire width.Comment: 16 pages, 6 figure

    Fundamental limits of few-layer NbSe2_2 microbolometers at terahertz frequencies

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    The rapid development of infrared spectroscopy, observational astronomy, and scanning near-field microscopy has been enabled by the emergence of sensitive mid- and far-infrared photodetectors. Owing to their exceptional signal-to-noise ratio and fast photoresponse, superconducting hot-electron bolometers (HEBs) have become a critical component in these applications. While superconducting HEBs are traditionally made from sputtered superconducting thin films like Nb or NbN, the potential of layered van der Waals (vdW) superconductors is untapped at THz frequencies. Here, we report the fabrication of superconducting HEBs out of few-layer NbSe2_2 microwires. By improving the interface between NbSe2_2 and metal leads connected to a broadband antenna, we overcome the impedance mismatch between this vdW superconductor and the radio frequency (RF) readout circuitry that allowed us to achieve large responsivity THz detection over the range from 0.13 to 2.5 THz with minimum noise equivalent power of 7~pWHz\sqrt{Hz}. Using the heterodyne sub-THz mixing technique, we reveal that NbSe2_2 superconducting HEBs are relatively fast and feature a characteristic response time in the nanosecond range limited by the slow heat escape to the bath through a SiO2_2 layer, on which they are assembled, in agreement with energy relaxation model. Our work expands the family of materials for superconducting HEBs technology, reveals NbSe2_2 as a promising platform, and offers a reliable protocol for the in-lab production of custom bolometers using the vdW assembly technique

    Anomalous terahertz photoconductivity caused by the superballistic flow of hydrodynamic electrons in graphene

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    Light incident upon materials can induce changes in their electrical conductivity, a phenomenon referred to as photoresistance. In semiconductors, the photoresistance is negative, as light-induced promotion of electrons across the band gap enhances the number of charge carriers participating in transport. In superconductors, the photoresistance is positive because of the destruction of the superconducting state, whereas in normal metals it is vanishing. Here we report a qualitative deviation from the standard behavior in metallic graphene. We show that Dirac electrons exposed to continuous wave (CW) terahertz (THz) radiation can be thermally decoupled from the lattice by 50~K which activates hydrodynamic electron transport. In this regime, the resistance of graphene constrictions experiences a decrease caused by the THz-driven superballistic flow of correlated electrons. We analyze the dependencies of the negative photoresistance on the carrier density, and the radiation power and show that our superballistic devices operate as sensitive phonon-cooled bolometers and can thus offer a picosecond-scale response time. Beyond their fundamental implications, our findings underscore the practicality of electron hydrodynamics in designing ultra-fast THz sensors and electron thermometers.Comment: 7 pages, 3 figure

    Quantum interference and manipulation of entanglement in silicon wire waveguide quantum circuits

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    Integrated quantum photonic waveguide circuits are a promising approach to realizing future photonic quantum technologies. Here, we present an integrated photonic quantum technology platform utilising the silicon-on-insulator material system, where quantum interference and the manipulation of quantum states of light are demonstrated in components orders of magnitude smaller than in previous implementations. Two-photon quantum interference is presented in a multi-mode interference coupler, and manipulation of entanglement is demonstrated in a Mach-Zehnder interferometer, opening the way to an all-silicon photonic quantum technology platform.Comment: 7 page
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