Robust quantum control by shaped pulse

Considering the problem of the control of a two-state quantum system by an external field, we establish a general and versatile method that allows the derivation of smooth pulses, suitable for ultrafast applications, that feature the properties of high-fidelity, robustness, and low area. Such shaped pulses can be viewed as a single-shot generalization of the composite pulse technique with a time-dependent phase

Learning policies through argumentation-derived evidence (extended abstract)

(c) IFAAMASPublisher PD

Interface Dipole : Effects on Threshold Voltage and Mobility for both Amorphous and Poly-crystalline Organic Field Effect Transistors

We report a detailed comparison on the role of a self-assembled monolayer (SAM) of dipolar molecules on the threshold voltage and charge carrier mobility of organic field-effect transistor (OFET) made of both amorphous and polycrystalline organic semiconductors. We show that the same relationship between the threshold voltage and the dipole-induced charges in the SAM holds when both types of devices are fabricated on strictly identical base substrates. Charge carrier mobilities, almost constant for amorphous OFET, are not affected by the dipole in the SAMs, while for polycrystalline OFET (pentacene) the large variation of charge carrier mobilities is related to change in the organic film structure (mostly grain size).Comment: Full paper and supporting informatio

Electron transport through rectifying self-assembled monolayer diodes on silicon: Fermi level pinning at the molecule-metal interface

We report the synthesis and characterization of molecular rectifying diodes on silicon using sequential grafting of self-assembled monolayers of alkyl chains bearing a pi group at their outer end (Si/sigma-pi/metal junctions). We investigate the structure-performance relationships of these molecular devices and we examine to what extent the nature of the pi end-group (change in the energy position of their molecular orbitals) drives the properties of these molecular diodes. For all the pi-groups investigated here, we observe rectification behavior. These results extend our preliminary work using phenyl and thiophene groups (S. Lenfant et al., Nano Letters 3, 741 (2003)).The experimental current-voltage curves are analyzed with a simple analytical model, from which we extract the energy position of the molecular orbital of the pi-group in resonance with the Fermi energy of the electrodes. We report the experimental studies of the band lineup in these silicon/alkyl-pi conjugated molecule/metal junctions. We conclude that Fermi level pinning at the pi-group/metal interface is mainly responsible for the observed absence of dependence of the rectification effect on the nature of the pi-groups, even though they were chosen to have significant variations in their electronic molecular orbitalsComment: To be published in J. Phys. Chem.

Effect of ready-to-use-therapeutic food supplementation on the nutritional status, mortality and morbidity of children 6 to 60 months in Niger, a cluster randomized trial

Presented at the conference of the American Society of Tropical Medicine and Hygiene 200

Negative Differential Resistance, Memory and Reconfigurable Logic Functions based on Monolayer Devices derived from Gold Nanoparticles Functionalized with Electro-polymerizable Thiophene-EDOT Units

We report on hybrid memristive devices made of a network of gold nanoparticles (10 nm diameter) functionalized by tailored 3,4(ethylenedioxy)thiophene (TEDOT) molecules, deposited between two planar electrodes with nanometer and micrometer gaps (100 nm to 10 um apart), and electropolymerized in situ to form a monolayer film of conjugated polymer with embedded gold nanoparticles (AuNPs). Electrical properties of these films exhibit two interesting behaviors: (i) a NDR (negative differential resistance) behavior with a peak/valley ratio up to 17, and (ii) a memory behavior with an ON/OFF current ratio of about 1E3 to 1E4. A careful study of the switching dynamics and programming voltage window is conducted demonstrating a non-volatile memory. The data retention of the ON and OFF states is stable (tested up to 24h), well controlled by the voltage and preserved when repeating the switching cycles (800 in this study). We demonstrate reconfigurable Boolean functions in multiterminal connected NP molecule devices.Comment: Full manuscript, figures and supporting information, J. Phys. Chem. C, on line, asap (2017

Large Logarithms in the Beam Normal Spin Asymmetry of Elastic Electron--Proton Scattering

We study a parity-conserving single-spin beam asymmetry of elastic electron-proton scattering induced by an absorptive part of the two-photon exchange amplitude. It is demonstrated that excitation of inelastic hadronic intermediate states by the consecutive exchange of two photons leads to logarithmic and double-logarithmic enhancement due to contributions of hard collinear quasi-real photons. The asymmetry at small electron scattering angles is expressed in terms of the total photoproduction cross section on the proton, and is predicted to reach the magnitude of 20-30 parts per million. At these conditions and fixed 4-momentum transfers, the asymmetry is rising logarithmically with increasing electron beam energy, following the high-energy diffractive behavior of total photoproduction cross section on the proton.Comment: 10 pages, 6 figures; typos fixed, a reference adde

Horizontal compressive stress regime on the northern Cascadia margin inferred from borehole breakouts

During Integrated Ocean Drilling Program Expedition 311 five boreholes were drilled across the accretionary prism of the northern Cascadia subduction zone. Logging-while-drilling borehole images are utilized to determine breakout orientations to define maximum horizontal compressive stress orientations. Additionally, wireline logging data at two of these sites and from Site 889 of Ocean Drilling Program Leg 146 are used to define breakouts from differences in the aperture of caliper arms. At most sites, the maximum horizontal compressive stress SHmax is margin-normal, consistent with plate convergence. Deviations from this trend reflect local structural perturbations. Our results do not constrain stress magnitudes. If the margin-normal compressional stress is greater than the vertical stress, the margin-normal SHmax direction we observe may reflect current locking of a velocity-weakening shallow megathrust and thus potential for trench-breaching, tsunamigenic rupture in a future megathrust earthquake