Geometric Phase, Hannay's Angle, and an Exact Action Variable

Canonical structure of a generalized time-periodic harmonic oscillator is studied by finding the exact action variable (invariant). Hannay's angle is defined if closed curves of constant action variables return to the same curves in phase space after a time evolution. The condition for the existence of Hannay's angle turns out to be identical to that for the existence of a complete set of (quasi)periodic wave functions. Hannay's angle is calculated, and it is shown that Berry's relation of semiclassical origin on geometric phase and Hannay's angle is exact for the cases considered.Comment: Submitted to Phys. Rev. Lett. (revised version

VISHNU hybrid model for viscous QCD matter at RHIC and LHC energies

In this proceeding, we briefly describe the viscous hydrodynamics + hadron cascade hybrid model VISHNU for relativistic heavy ion collisions and report the current status on extracting the QGP viscosity from elliptic flow data.Comment: 4 pages, 1 figure, the proceedings of 7th International Workshop on Critical Point and Onset of Deconfinement, Wuhan, China, Nov. 7-11, 201

Quark deconfinement phase transition for improved quark mass density-dependent model

By using the finite temperature quantum field theory, we calculate the finite temperature effective potential and extend the improved quark mass density-dependent model to finite temperature. It is shown that this model can not only describe the saturation properties of nuclear matter, but also explain the quark deconfinement phase transition successfully. The critical temperature is given and the effect of $\omega$- meson is addressed.Comment: 18 pages, 7 figure

New Developments in Tourism and Hotel Demand Modeling and Forecasting

Abstract Purpose The purpose of the study is to review recent studies published from 2007-2015 on tourism and hotel demand modeling and forecasting with a view to identifying the emerging topics and methods studied and to pointing future research directions in the field. Design/Methodology/approach Articles on tourism and hotel demand modeling and forecasting published in both science citation index (SCI) and social science citation index (SSCI) journals were identified and analyzed. Findings This review found that the studies focused on hotel demand are relatively less than those on tourism demand. It is also observed that more and more studies have moved away from the aggregate tourism demand analysis, while disaggregate markets and niche products have attracted increasing attention. Some studies have gone beyond neoclassical economic theory to seek additional explanations of the dynamics of tourism and hotel demand, such as environmental factors, tourist online behavior and consumer confidence indicators, among others. More sophisticated techniques such as nonlinear smooth transition regression, mixed-frequency modeling technique and nonparametric singular spectrum analysis have also been introduced to this research area. Research limitations/implications The main limitation of this review is that the articles included in this study only cover the English literature. Future review of this kind should also include articles published in other languages. The review provides a useful guide for researchers who are interested in future research on tourism and hotel demand modeling and forecasting. Practical implications This review provides important suggestions and recommendations for improving the efficiency of tourism and hospitality management practices. Originality/value The value of this review is that it identifies the current trends in tourism and hotel demand modeling and forecasting research and points out future research directions

SiGeC alloy layer formation by high-dose C + implantations into pseudomorphic metastable Ge0.08Si0.92 on Si(100)

Dual-energy carbon implantation (1 × 1016/cm2 at 150 and at 220 keV) was performed on 260-nm-thick undoped metastable pseudomorphic Si(100)/ Ge0.08Si0.92 with a 450-nm-thick SiO2 capping layer, at either room temperature or at 100 °C. After removal of the SiO2 the samples were measured using backscattering/channeling spectrometry and double-crystal x-ray diffractometry. A 150-nm-thick amorphous layer was observed in the room temperature implanted samples. This layer was found to have regrown epitaxially after sequential annealing at 550 °C for 2 h plus at 700 °C for 30 min. Following this anneal, tensile strain, believed to result from a large fraction of substitutional carbon in the regrown layer, was observed. Compressive strain, that presumably arises from the damaged but nonamorphized portion of the GeSi layer, was also observed. This strain was not significantly affected by the annealing treatment. For the samples implanted at 100 °C, in which case no amorphous layer was produced, only compressive strain was observed. For samples implanted at both room temperature and 100 °C, the channelled backscattering yield from the Si substrate was the same as that of the virgin sample