Nonlinear evolution of surface morphology in InAs/AlAs superlattices via surface diffusion

Continuum simulations of self-organized lateral compositional modulation growth in InAs/AlAs short-period superlattices on InP substrate are presented. Results of the simulations correspond quantitatively to the results of synchrotron x-ray diffraction experiments. The time evolution of the compositional modulation during epitaxial growth can be explained only including a nonlinear dependence of the elastic energy of the growing epitaxial layer on its thickness. From the fit of the experimental data to the growth simulations we have determined the parameters of this nonlinear dependence. It was found that the modulation amplitude don't depend on the values of the surface diffusion constants of particular elements.Comment: 4 pages, 3 figures, published in Phys. Rev. Lett. http://link.aps.org/abstract/PRL/v96/e13610

Microstructure formation in electrodeposited Co-Cu/Cu multilayers with GMR effect: influence of current density during the magnetic layer deposition

The influence of the current density applied during the deposition of the magnetic layers on the microstructure formation in electrodeposited Co-Cu/Cu multilayers and on their giant magnetoresistance (GMR) was investigated using a combination of magnetoresistance measurements, wide-angle and small-angle X-ray scattering, high-resolution transmission electron microscopy, atomic force microscopy and chemical analysis. The magnetoresistance measurements revealed that a reduction of the current density stimulates a transition from the formation of the magnetic layers with predominantly ferromagnetic character to the formation of superparamagnetic regions. As based on electrochemical considerations, it was supposed that such a change in the magnetic properties can be caused by an increased amount of Cu codeposited with Co at low current densities. It turned out from the structural studies that a pronounced segregation of Co and Cu occurs at low current densities. In accordance with their very low mutual solubility at room temperature, no atomic scale intermixing of Co and Cu could be detected. The segregation of Cu and Co was related to the fragmentation of the magnetic layers, to the enhancement of the local lattice strains, to the increase of the interface corrugations, to the partial loss of the multilayer periodicity and finally to the formation of Co precipitates in the Cu matrix

Effect of inter-wall surface roughness correlations on optical spectra of quantum well excitons

We show that the correlation between morphological fluctuations of two interfaces confining a quantum well strongly suppresses a contribution of interface disorder to inhomogeneous line width of excitons. We also demonstrate that only taking into account these correlations one can explain all the variety of experimental data on the dependence of the line width upon thickness of the quantum well.Comment: 13 pages, 8 figures, Revtex4, submitted to PR

Effect of strain on surface diffusion in semiconductor heteroepitaxy

We present a first-principles analysis of the strain renormalization of the cation diffusivity on the GaAs(001) surface. For the example of In/GaAs(001)-c(4x4) it is shown that the binding of In is increased when the substrate lattice is expanded. The diffusion barrier \Delta E(e) has a non-monotonic strain dependence with a maximum at compressive strain values (e 0) studied. We discuss the consequences of spatial variations of both the binding energy and the diffusion barrier of an adatom caused by the strain field around a heteroepitaxial island. For a simplified geometry, we evaluate the speed of growth of two coherently strained islands on the GaAs(001) surface and identify a growth regime where island sizes tend to equalize during growth due to the strain dependence of surface diffusion.Comment: 10 pages, 8 figures, LaTeX2e, to appear in Phys. Rev. B (2001). Other related publications can be found at http://www.rz-berlin.mpg.de/th/paper.htm

A multi-targeted drug candidate with dual anti-HIV and anti-HSV activity

Human immunodeficiency virus (HIV) infection is often accompanied by infection with other pathogens, in particular herpes simplex virus type 2 (HSV-2). The resulting coinfection is involved in a vicious circle of mutual facilitations. Therefore, an important task is to develop a compound that is highly potent against both viruses to suppress their transmission and replication. Here, we report on the discovery of such a compound, designated PMEO-DAPym. We compared its properties with those of the structurally related and clinically used acyclic nucleoside phosphonates (ANPs) tenofovir and adefovir. We demonstrated the potent anti-HIV and -HSV activity of this drug in a diverse set of clinically relevant in vitro, ex vivo, and in vivo systems including (i) CD4⁺ T-lymphocyte (CEM) cell cultures, (ii) embryonic lung (HEL) cell cultures, (iii) organotypic epithelial raft cultures of primary human keratinocytes (PHKs), (iv) primary human monocyte/macrophage (M/M) cell cultures, (v) human ex vivo lymphoid tissue, and (vi) athymic nude mice. Upon conversion to its diphosphate metabolite, PMEO-DAPym markedly inhibits both HIV-1 reverse transcriptase (RT) and HSV DNA polymerase. However, in striking contrast to tenofovir and adefovir, it also acts as an efficient immunomodulator, inducing β-chemokines in PBMC cultures, in particular the CCR5 agonists MIP-1β, MIP-1α and RANTES but not the CXCR4 agonist SDF-1, without the need to be intracellularly metabolized. Such specific β-chemokine upregulation required new mRNA synthesis. The upregulation of β-chemokines was shown to be associated with a pronounced downmodulation of the HIV-1 coreceptor CCR5 which may result in prevention of HIV entry. PMEO-DAPym belongs conceptually to a new class of efficient multitargeted antivirals for concomitant dual-viral (HSV/HIV) infection therapy through inhibition of virus-specific pathways (i.e. the viral polymerases) and HIV transmission prevention through interference with host pathways (i.e. CCR5 receptor down regulation)

Magnetic anisotropy in antiferromagnetic hexagonal MnTe

Antiferromagnetic hexagonal MnTe is a promising material for spintronic devices relying on the control of antiferromagnetic domain orientations. Here we report on neutron diffraction, magnetotransport, and magnetometry experiments on semiconducting epitaxial MnTe thin films together with density functional theory (DFT) calculations of the magnetic anisotropies. The easy axes of the magnetic moments within the hexagonal basal plane are determined to be along ⟨1¯100⟩ directions. The spin-flop transition and concomitant repopulation of domains in strong magnetic fields is observed. Using epitaxially induced strain the onset of the spin-flop transition changes from ∼2 to ∼0.5 T for films grown on InP and SrF2 substrates, respectively

Spectral modeling of scintillator for the NEMO-3 and SuperNEMO detectors

We have constructed a GEANT4-based detailed software model of photon transport in plastic scintillator blocks and have used it to study the NEMO-3 and SuperNEMO calorimeters employed in experiments designed to search for neutrinoless double beta decay. We compare our simulations to measurements using conversion electrons from a calibration source of $\rm ^{207}Bi$ and show that the agreement is improved if wavelength-dependent properties of the calorimeter are taken into account. In this article, we briefly describe our modeling approach and results of our studies.Comment: 16 pages, 10 figure

Local moment formation and magnetic coupling of Mn guest atoms in Bi2_2Se3_3: a low-temperature ferromagnetic resonance study

We compare the magnetic and electronic configuration of single Mn atoms in molecular beam epitaxy (MBE) grown Bi$_2$Se$_3$ thin films, focusing on electron paramagnetic (ferromagnetic) resonance (EPR and FMR, respectively) and superconducting quantum interference device (SQUID) techniques. X-ray diffraction (XRD) and electron backscatter diffraction (EBSD) reveal the expected increase of disorder with increasing concentration of magnetic guest atoms, however, Kikuchi patterns show that disorder consists majorly of mum-scale 60deg twin domains in the hexagonal Bi$_2$Se$_3$ structure, which are promoted by the presence of single unclustered Mn impurities. Ferromagnetism below T$_C$ ~ (5.4 +/- 0.3) K can be well described by critical scaling laws M(T) ~ (1-T/T$_C$)$^\beta$ with a critical exponent $\beta$ = (0.34 +/- 0.2)), suggesting 3D Heisenberg class magnetism instead of e.g. 2D-type coupling between Mn-spins in van der Waals gap sites. From EPR hyperfine structure data we determine a Mn$^{2+}$ (d$^5$, S = 5/2) electronic configuration with a g-factor of 2.002 for -1/2 --> +1/2 transitions. In addition, from the strong dependence of the low temperature FMR fields and linewidth on the field strength and orientation with respect to the Bi$_2$Se$_3$ (0001) plane, we derive magnetic anisotropy energies of up to K1 = -3720 erg/cm3 in MBE-grown Mn-doped Bi$_2$Se$_3$, reflecting the first order magneto-crystalline anisotropy of an in-plane magnetic easy plane in a hexagonal (0001) crystal symmetry. Across the ferromagnetic-paramagnetic transition the FMR intensity is suppressed and resonance fields converge the paramagnetic limit of a Mn$^{2+}$ (d$^5$, S = 5/2)

X-ray nanodiffraction on a single SiGe quantum dot inside a functioning field-effect transistor

For advanced electronic, optoelectronic, or mechanical nanoscale devices a detailed understanding of their structural properties and in particular the strain state within their active region is of utmost importance. We demonstrate that X-ray nanodiffraction represents an excellent tool to investigate the internal structure of such devices in a nondestructive way by using a focused synchotron X-ray beam with a diameter of 400 nm. We show results on the strain fields in and around a single SiGe island, which serves as stressor for the Si-channel in a fully functioning Si-metal-oxide semiconductor field-effect transistor