Studies of defects and annealing behavior of silicon irradiated with 70 MeV Fe-56 ions

The effects of 70 MeV irradiation of iron ions in p-type silicon at fluences between 1 x 10(12) and 5 x 10(14) ions cm(-2) were investigated by high resolution X-ray diffraction (HRXRD), electron spin resonance (ESR) and current-voltage measurements. The irradiated samples were isochronally annealed in nitrogen ambient up to 973 K for 2 min using the rapid thermal annealing (RTA) system. The screw dislocation density of the annealed sample (5 x 101 4 ions cm(-2)) estimated at each stage of annealing from the broadening of the HRXRD peak was observed to change from 8.70 x 10(7) to 1.58 x 10(7) cm(-2) with increasing temperatures. The strain and stress parameters estimated at each stage of annealing using the FWHM of omega-scan clearly indicate relative trend towards the un-irradiated silicon sample. The electron spin resonance studies indicate the presence of the dangling bond state of silicon (Si equivalent to Si) and complex defects. The annealing at 873 K was found to be sufficient for complete removal of the defect centers induced due to irradiation. The I-V studies performed on the irradiated samples before and after annealing indicate that the defects created as a consequence of irradiation trap the charge carriers. (c) 2005 Elsevier B.V. All rights reserved

Studies of defects and annealing behavior of silicon irradiated with 70 MeV Fe-56 ions

The effects of 70 MeV irradiation of iron ions in p-type silicon at fluences between 1 x 10(12) and 5 x 10(14) ions cm(-2) were investigated by high resolution X-ray diffraction (HRXRD), electron spin resonance (ESR) and current-voltage measurements. The irradiated samples were isochronally annealed in nitrogen ambient up to 973 K for 2 min using the rapid thermal annealing (RTA) system. The screw dislocation density of the annealed sample (5 x 101 4 ions cm(-2)) estimated at each stage of annealing from the broadening of the HRXRD peak was observed to change from 8.70 x 10(7) to 1.58 x 10(7) cm(-2) with increasing temperatures. The strain and stress parameters estimated at each stage of annealing using the FWHM of omega-scan clearly indicate relative trend towards the un-irradiated silicon sample. The electron spin resonance studies indicate the presence of the dangling bond state of silicon (Si equivalent to Si) and complex defects. The annealing at 873 K was found to be sufficient for complete removal of the defect centers induced due to irradiation. The I-V studies performed on the irradiated samples before and after annealing indicate that the defects created as a consequence of irradiation trap the charge carriers. (c) 2005 Elsevier B.V. All rights reserved

Investigation of 70 MeV iron irradiation induced defects in C-silicon

Single crystal p-type silicon wafers of 0.05 Omegacm resistivity and orientation were irradiated with 70 MeV Fe-56 ions at fluence levels varying from 5 x 10(12) to 5 x 10(14) ions cm(-2). The high-resolution X-ray diffraction (XRD) and electron spin resonance (ESR) measurements were carried out to investigate the defect levels. From XRD studies it is found that the radiation induced defect density increases with increasing fluence up to 5 x 10(13) ions cm(-2) and thereafter it saturates. The screw dislocation density was found to change from 1.59 x 10(6) to 1.93 x 10(8) cm(-2) with increasing ion fluence. The strain induced in irradiated samples varied from 5.2 x 10(-4) to 9 x 10(-5) Nm(-2) with increasing ion fluence. ESR study indicates the presence of different types of defect centers. The dominant signal obtained at g value 2.0063 is attributed to the dangling bond states of silicon. (C) 200