8,870 research outputs found
A Confidence-Based Approach for Balancing Fairness and Accuracy
We study three classical machine learning algorithms in the context of
algorithmic fairness: adaptive boosting, support vector machines, and logistic
regression. Our goal is to maintain the high accuracy of these learning
algorithms while reducing the degree to which they discriminate against
individuals because of their membership in a protected group.
Our first contribution is a method for achieving fairness by shifting the
decision boundary for the protected group. The method is based on the theory of
margins for boosting. Our method performs comparably to or outperforms previous
algorithms in the fairness literature in terms of accuracy and low
discrimination, while simultaneously allowing for a fast and transparent
quantification of the trade-off between bias and error.
Our second contribution addresses the shortcomings of the bias-error
trade-off studied in most of the algorithmic fairness literature. We
demonstrate that even hopelessly naive modifications of a biased algorithm,
which cannot be reasonably said to be fair, can still achieve low bias and high
accuracy. To help to distinguish between these naive algorithms and more
sensible algorithms we propose a new measure of fairness, called resilience to
random bias (RRB). We demonstrate that RRB distinguishes well between our naive
and sensible fairness algorithms. RRB together with bias and accuracy provides
a more complete picture of the fairness of an algorithm
Disorder induced brittle to quasi-brittle transition in fiber bundles
We investigate the fracture process of a bundle of fibers with random Young
modulus and a constant breaking strength. For two component systems we show
that the strength of the mixture is always lower than the strength of the
individual components. For continuously distributed Young modulus the tail of
the distribution proved to play a decisive role since fibers break in the
decreasing order of their stiffness. Using power law distributed stiffness
values we demonstrate that the system exhibits a disorder induced brittle to
quasi-brittle transition which occurs analogously to continuous phase
transitions. Based on computer simulations we determine the critical exponents
of the transition and construct the phase diagram of the system.Comment: 6 pages, 6 figure
Blending stiffness and strength disorder can stabilize fracture
Quasi-brittle behavior where macroscopic failure is preceded by stable
damaging and intensive cracking activity is a desired feature of materials
because it makes fracture predictable. Based on a fiber bundle model with
global load sharing we show that blending strength and stiffness disorder of
material elements leads to the stabilization of fracture, i.e. samples which
are brittle when one source of disorder is present, become quasi-brittle as a
consequence of blending. We derive a condition of quasi-brittle behavior in
terms of the joint distribution of the two sources of disorder. Breaking bursts
have a power law size distribution of exponent 5/2 without any crossover to a
lower exponent when the amount of disorder is gradually decreased. The results
have practical relevance for the design of materials to increase the safety of
constructions.Comment: 9 pages, 6 figures, revte
Engineering graphene by oxidation: a first principles study
Graphene epoxide, with oxygen atoms lining up on pristine graphene sheets, is
investigated theoretically in this Letter. Two distinct phases: metastable
clamped and unzipped structures are unveiled in consistence with experiments.
In the stable (unzipped) phase, epoxy group breaks underneath sp2 bond and
modifies the mechanical and electronic properties of graphene remarkably. The
foldable epoxy ring structure reduces its Young's modulus by 42.4%, while
leaves the tensile strength almost unchanged. Epoxidation also perturbs the pi
state and opens semiconducting gap for both phases, with dependence on the
density of epoxidation. In the unzipped structures, localized states revealed
near the Fermi level resembles the edge states in graphene nanoribbons. The
study reported here paves the way for oxidation-based functionalization of
graphene-related materials.Comment: 17 pages (4 figures, 1 table
Effect of disorder on temporal fluctuations in drying induced cracking
We investigate by means of computer simulations the effect of structural
disorder on the statistics of cracking for a thin layer of material under
uniform and isotropic drying. The layer is discretized into a triangular
lattice of springs. The drying process is captured by reducing the natural
length of all springs by the same factor, and the amount of quenched disorder
is controlled by varying the width {\xi} of the distribution of the random
breaking thresholds for the springs. Once a spring breaks, redistribution of
the load may trigger an avalanche of breaks. Our simulations revealed that the
system exhibits a phase transition with the amount of disorder as control
parameter: at low disorders, the breaking process is dominated by a macroscopic
crack at the beginning, and the size distribution of the subsequent breaking
avalanches shows an exponential form. At high disorders, the fracturing
proceeds in small-sized avalanches with an exponential distribution, generating
a large number of micro-cracks which eventually merge and break the layer.
Between both phases a sharp transition occurs at a critical amount of disorder
{\xi}_c = 0.40 \pm 0.01, where the avalanche size distribution becomes a power
law with exponent {\tau} = 2.6 \pm 0.08, in agreement with the mean-field value
{\tau} = 5/2 of the fiber bundle model. Good quality data collapses from the
finite-size scaling analysis show that the average value of the largest burst
can be identified as the order parameter, with {\beta}/{\nu} = 1.4
and 1/{\nu} = 1.0, and that the average ratio of the second m2 and
first moments m1 of the avalanche size distribution shows similar behaviour to
the susceptibility of a continuous transition, with {\gamma}/{\nu} = 1.,
1/{\nu} = 0.9. These suggest that the disorder induced transition of the
breakup of thin layers is analogous to a continuous phase transition.Comment: 9 figure
Disorder driven collapse of the mobility gap and transition to an insulator in fractional quantum Hall effect
We study the nu=1/3 quantum Hall state in presence of the random disorder. We
calculate the topologically invariant Chern number, which is the only quantity
known at present to unambiguously distinguish between insulating and current
carrying states in an interacting system. The mobility gap can be determined
numerically this way, which is found to agree with experimental value
semiquantitatively. As the disorder strength increases towards a critical
value, both the mobility gap and plateau width narrow continuously and
ultimately collapse leading to an insulating phase.Comment: 4 pages with 4 figure
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