Molecular-beam epitaxy of CrSi_2 on Si(111)

Chromium disilicide layers have been grown on Si(111) in a commercial molecular‐beam epitaxy machine. Thin layers (10 nm) exhibit two epitaxial relationships, which have been identified as CrSi_2(0001)//Si(111) with CrSi_2[1010]//Si[101], and CrSi_2(0001)//Si(111) with CrSi_2[1120]//Si[101]. The latter case represents a 30° rotation of the CrSi_2 layer about the Si surface normal relative to the former case. Thick (210 nm) layers were grown by four different techniques, and the best‐quality layer was obtained by codeposition of Cr and Si at an elevated temperature. These layers are not single crystal; the largest grains are observed in a layer grown at 825 °C and are 1–2 μm across

Analysis and Geometric Optimization of Single Electron Transistors for Read-Out in Solid-State Quantum Computing

The single electron transistor (SET) offers unparalled opportunities as a nano-scale electrometer, capable of measuring sub-electron charge variations. SETs have been proposed for read-out schema in solid-state quantum computing where quantum information processing outcomes depend on the location of a single electron on nearby quantum dots. In this paper we investigate various geometries of a SET in order to maximize the device's sensitivity to charge transfer between quantum dots. Through the use of finite element modeling we model the materials and geometries of an Al/Al2O3 SET measuring the state of quantum dots in the Si substrate beneath. The investigation is motivated by the quest to build a scalable quantum computer, though the methodology used is primarily that of circuit theory. As such we provide useful techniques for any electronic device operating at the classical/quantum interface.Comment: 13 pages, 17 figure

Ion implanted Si:P double-dot with gate tuneable interdot coupling

We report on millikelvin charge sensing measurements of a silicon double-dot system fabricated by phosphorus ion implantation. An aluminum single-electron transistor (SET) is capacitively coupled to each of the implanted dots enabling the charging behavior of the double-dot system to be studied independently of current transport. Using an electrostatic gate, the interdot coupling can be tuned from weak to strong coupling. In the weak interdot coupling regime, the system exhibits well-defined double-dot charging behavior. By contrast, in the strong interdot coupling regime, the system behaves as a single-dot.Comment: 11 pages, 5 figure

Self-aligned fabrication process for silicon quantum computer devices

We describe a fabrication process for devices with few quantum bits (qubits), which are suitable for proof-of-principle demonstrations of silicon-based quantum computation. The devices follow the Kane proposal to use the nuclear spins of 31P donors in 28Si as qubits, controlled by metal surface gates and measured using single electron transistors (SETs). The accurate registration of 31P donors to control gates and read-out SETs is achieved through the use of a self-aligned process which incorporates electron beam patterning, ion implantation and triple-angle shadow-mask metal evaporation

Electron tunnel rates in a donor-silicon single electron transistor hybrid

We investigate a hybrid structure consisting of $20\pm4$ implanted $^{31}$P atoms close to a gate-induced silicon single electron transistor (SiSET). In this configuration, the SiSET is extremely sensitive to the charge state of the nearby centers, turning from the off state to the conducting state when the charge configuration is changed. We present a method to measure fast electron tunnel rates between donors and the SiSET island, using a pulsed voltage scheme and low-bandwidth current detection. The experimental findings are quantitatively discussed using a rate equation model, enabling the extraction of the capture and emission rates.Comment: 10 pages, 3 figure

Formation of atomic tritium clusters and condensates

We present an extensive study of the static and dynamic properties of systems of spin-polarized tritium atoms. In particular, we calculate the two-body |F,m_F>=|0,0> s-wave scattering length and show that it can be manipulated via a Feshbach resonance at a field strength of about 870G. Such a resonance might be exploited to make and control a Bose-Einstein condensate of tritium in the |0,0> state. It is further shown that the quartet tritium trimer is the only bound hydrogen isotope and that its single vibrational bound state is a Borromean state. The ground state properties of larger spin-polarized tritium clusters are also presented and compared with those of helium clusters.Comment: 5 pages, 3 figure

Bias spectroscopy and simultaneous SET charge state detection of Si:P double dots

We report a detailed study of low-temperature (mK) transport properties of a silicon double-dot system fabricated by phosphorous ion implantation. The device under study consists of two phosphorous nanoscale islands doped to above the metal-insulator transition, separated from each other and the source and drain reservoirs by nominally undoped (intrinsic) silicon tunnel barriers. Metallic control gates, together with an Al-AlOx single-electron transistor, were positioned on the substrate surface, capacitively coupled to the buried dots. The individual double-dot charge states were probed using source-drain bias spectroscopy combined with non-invasive SET charge sensing. The system was measured in linear (VSD = 0) and non-linear (VSD 0) regimes allowing calculations of the relevant capacitances. Simultaneous detection using both SET sensing and source-drain current measurements was demonstrated, providing a valuable combination for the analysis of the system. Evolution of the triple points with applied bias was observed using both charge and current sensing. Coulomb diamonds, showing the interplay between the Coulomb charging effects of the two dots, were measured using simultaneous detection and compared with numerical simulations.Comment: 7 pages, 6 figure

A note on the calculation of the effective range

The closed form of the first order non-linear differential equation that is satisfied by the effective range within the variable phase formulation of scattering theory is discussed. It is shown that the conventional method of determining the effective range, by fitting a numerical solution of the Schr\"odinger equation to known asymptotic boundary conditions, can be modified to include the first order contribution of a long range interaction.Comment: 4 page