Electron-induced rippling in graphene

We show that the interaction between flexural phonons, when corrected by the exchange of electron-hole excitations, may place the graphene sheet very close to a quantum critical point characterized by the strong suppression of the bending rigidity of the membrane. Ripples arise then due to spontaneous symmetry breaking, following a mechanism similar to that responsible for the condensation of the Higgs field in relativistic field theories. In the presence of membrane tensions, ripple condensation may be reinforced or suppressed depending on the sign of the tension, following a zero-temperature buckling transition in which the order parameter is given essentially by the square of the gradient of the flexural phonon field.Comment: 4 pages, 3 figure

Geometric phases in semiconductor spin qubits: Manipulations and decoherence

We describe the effect of geometric phases induced by either classical or quantum electric fields acting on single electron spins in quantum dots in the presence of spin-orbit coupling. On one hand, applied electric fields can be used to control the geometric phases, which allows performing quantum coherent spin manipulations without using high-frequency magnetic fields. On the other hand, fluctuating fields induce random geometric phases that lead to spin relaxation and dephasing, thus limiting the use of such spins as qubits. We estimate the decay rates due to piezoelectric phonons and conduction electrons in the circuit, both representing dominant electric noise sources with characteristically differing power spectra.Comment: 17 pages, 8 figures, published versio

Disorder-induced pseudodiffusive transport in graphene nanoribbons.

We study the transition from ballistic to diffusive and localized transport in graphene nanoribbons in the presence of binary disorder, which can be generated by chemical adsorbates or substitutional doping. We show that the interplay between the induced average doping (arising from the nonzero average of the disorder) and impurity scattering modifies the traditional picture of phase-coherent transport. Close to the Dirac point, intrinsic evanescent modes produced by the impurities dominate transport at short lengths giving rise to a regime analogous to pseudodiffusive transport in clean graphene, but without the requirement of heavily doped contacts. This intrinsic pseudodiffusive regime precedes the traditional ballistic, diffusive, and localized regimes. The last two regimes exhibit a strongly modified effective number of propagating modes and a mean free path which becomes anomalously large close to the Dirac point

Hall-effect and resistivity measurements in CdTe and ZnTe at high pressure: Electronic structure of impurities in the zincblende phase and the semi-metallic or metallic character of the high-pressure phases

We carried out high-pressure resistivity and Hall-effect measurements in single crystals of CdTe and ZnTe up to 12 GPa. Slight changes of transport parameters in the zincblende phase of CdTe are consitent with the shallow character of donor impurities. Drastic changes in all the transport parameters of CdTe were found around 4 GPa, i.e. close to the onset of the cinnabar to rock-salt transition. In particular, the carrier concentration increases by more than five orders of magnitude. Additionally, an abrupt decrease of the resistivity was detected around 10 GPa. These results are discussed in comparison with optical, thermoelectric, and x-ray diffraction experiments. The metallic character of the Cmcm phase of CdTe is confirmed and a semi-metallic character is determined for the rock-salt phase. In zincblende ZnTe, the increase of the hole concentration by more than two orders of magnitude is proposed to be due to a deep-to-shallow transformation of the acceptor levels. Between 9 and 11 GPa, transport parameters are consistent with the semiconducting character of cinnabar ZnTe. A two orders of magnitude decrease of the resistivity and a carrier-type inversion occurs at 11 GPa, in agreement with the onset of the transition to the Cmcm phase of ZnTe. A metallic character for this phase is deduced.Comment: 20 pages, 4 figure

Graphene field-effect-transistors with high on/off current ratio and large transport band gap at room temperature

Graphene is considered to be a promising candidate for future nano-electronics due to its exceptional electronic properties. Unfortunately, the graphene field-effect-transistors (FETs) cannot be turned off effectively due to the absence of a bandgap, leading to an on/off current ratio typically around 5 in top-gated graphene FETs. On the other hand, theoretical investigations and optical measurements suggest that a bandgap up to a few hundred meV can be created by the perpendicular E-field in bi-layer graphenes. Although previous carrier transport measurements in bi-layer graphene transistors did indicate a gate-induced insulating state at temperature below 1 Kelvin, the electrical (or transport) bandgap was estimated to be a few meV, and the room temperature on/off current ratio in bi-layer graphene FETs remains similar to those in single-layer graphene FETs. Here, for the first time, we report an on/off current ratio of around 100 and 2000 at room temperature and 20 K, respectively in our dual-gate bi-layer graphene FETs. We also measured an electrical bandgap of >130 and 80 meV at average electric displacements of 2.2 and 1.3 V/nm, respectively. This demonstration reveals the great potential of bi-layer graphene in applications such as digital electronics, pseudospintronics, terahertz technology, and infrared nanophotonics.Comment: 3 Figure

Decitabine impact on the endocytosis regulator RhoA, the folate carriers RFC1 and FOLR1, and the glucose transporter GLUT4 in human tumors.

BackgroundIn 31 solid tumor patients treated with the demethylating agent decitabine, we performed tumor biopsies before and after the first cycle of decitabine and used immunohistochemistry (IHC) to assess whether decitabine increased expression of various membrane transporters. Resistance to chemotherapy may arise due to promoter methylation/downregulation of expression of transporters required for drug uptake, and decitabine can reverse resistance in vitro. The endocytosis regulator RhoA, the folate carriers FOLR1 and RFC1, and the glucose transporter GLUT4 were assessed.ResultsPre-decitabine RhoA was higher in patients who had received their last therapy >3 months previously than in patients with more recent prior therapy (P = 0.02), and varied inversely with global DNA methylation as assessed by LINE1 methylation (r = -0.58, P = 0.006). Tumor RhoA scores increased with decitabine (P = 0.03), and RFC1 also increased in patients with pre-decitabine scores ≤150 (P = 0.004). Change in LINE1 methylation with decitabine did not correlate significantly with change in IHC scores for any transporter assessed. We also assessed methylation of the RFC1 gene (alias SLC19A1). SLC19A1 methylation correlated with tumor LINE1 methylation (r = 0.45, P = 0.02). There was a small (statistically insignificant) decrease in SLC19A1 methylation with decitabine, and there was a trend towards change in SLC19A1 methylation with decitabine correlating with change in LINE1 methylation (r = 0.47, P <0.15). While SLC19A1 methylation did not correlate with RFC1 scores, there was a trend towards an inverse correlation between change in SLC19A1 methylation and change in RFC1 expression (r = -0.45, P = 0.19).ConclusionsIn conclusion, after decitabine administration, there was increased expression of some (but not other) transporters that may play a role in chemotherapy uptake. Larger patient numbers will be needed to define the extent to which this increased expression is associated with changes in DNA methylation

Large tunable valley splitting in edge-free graphene quantum dots on boron nitride

Coherent manipulation of binary degrees of freedom is at the heart of modern quantum technologies. Graphene offers two binary degrees: the electron spin and the valley. Efficient spin control has been demonstrated in many solid state systems, while exploitation of the valley has only recently been started, yet without control on the single electron level. Here, we show that van-der Waals stacking of graphene onto hexagonal boron nitride offers a natural platform for valley control. We use a graphene quantum dot induced by the tip of a scanning tunneling microscope and demonstrate valley splitting that is tunable from -5 to +10 meV (including valley inversion) by sub-10-nm displacements of the quantum dot position. This boosts the range of controlled valley splitting by about one order of magnitude. The tunable inversion of spin and valley states should enable coherent superposition of these degrees of freedom as a first step towards graphene-based qubits

Pumping current of a Luttinger liquid with finite length

We study transport properties in a Tomonaga-Luttinger liquid in the presence of two time-dependent point like weak impurities, taking into account finite-length effects. By employing analytical methods and performing a perturbation theory, we compute the backscattering pumping current (I_bs) in different regimes which can be established in relation to the oscillatory frequency of the impurities and to the frequency related to the length and the renormalized velocity (by the electron-electron interactions) of the charge density modes. We investigate the role played by the spatial position of the impurity potentials. We also show how the previous infinite length results for I_bs are modified by the finite size of the system.Comment: 9 pages, 7 figure