Fundamentals of metal-semiconductor contacts

The fundamentals of metal-semiconductor contacts are discussed. Contact resistance values for solar cells are also discussed

van der Waals interactions of the benzene dimer: towards treatment of polycyclic aromatic hydrocarbon dimers

Although density functional theory (DFT) in principle includes even long-range interactions, standard implementations employ local or semi-local approximations of the interaction energy and fail at describing the van der Waals interactions. We show how to modify a recent density functional that includes van der Waals interactions in planar systems [Phys. Rev. Lett. 91, 126402 (2003)] to also give an approximate interaction description of planar molecules. As a test case we use this modified functional to calculate the binding distance and energy for benzene dimers, with the perspective of treating also larger, flat molecules, such as the polycyclic aromatic hydrocarbons (PAH).Comment: 7 pages, 2 figures (3 figure files) submitted to Materials Science and Engineering

Coherent transport in Nb/delta-doped-GaAs hybrid microstructures

Coherent transport in Nb/GaAs superconductor-semiconductor microstructures is presented. The structures fabrication procedure is based on delta-doped layers grown by molecular-beam-epitaxy near the GaAs surface, followed by an As cap layer to protect the active semiconductor layers during ex situ transfer. The superconductor is then sputter deposited in situ after thermal desorption of the protective layer. Two types of structures in particular will be discussed, i.e., a reference junction and the engineered one that contains an additional insulating AlGaAs barrier inserted during the growth in the semiconductor. This latter configuration may give rise to controlled interference effects and realizes the model introduced by de Gennes and Saint-James in 1963. While both structures show reflectionless tunneling-dominated transport, only the engineered junction shows additionally a low-temperature single marked resonance peaks superimposed to the characteristic Andreev-dominated subgap conductance. The analysis of coherent magnetotransport in both microstructures is successfully performed within the random matrix theory of Andreev transport and ballistic effects are included by directly solving the Bogoliubov-de Gennes equations. The impact of junction morphology on reflectionless tunneling and the application of the employed fabrication technique to the realization of complex semiconductor-superconductor systems are furthermore discussed.Comment: 9 pages, 8 figures, invited review paper, to be published in Mod. Phys. Lett.

Ohmic contacts to n-type germanium with low specific contact resistivity

A low temperature nickel process has been developed that produces Ohmic contacts to n-type germanium with specific contact resistivities down to (2.3 ± 1.8) x10<sup>-7</sup> Ω-cm<sup>2</sup> for anneal temperatures of 340 degC. The low contact resistivity is attributed to the low resistivity NiGe phase which was identified using electron diffraction in a transmission electron microscope. Electrical results indicate that the linear Ohmic behaviour of the contact is attributed to quantum mechanical tunnelling through the Schottky barrier formed between the NiGe alloy and the heavily doped n-Ge.<p></p&gt

Heavy Meson Physics: What have we learned in Twenty Years?

I give a personal account of the development of the field of heavy quarks. After reviewing the experimental discovery of charm and bottom quarks, I describe how the field's focus shifted towards determination of CKM elements and how this has matured into a precision science.Comment: This talk was presented during the ceremony awarding the Medalla 2003 of the Division of Particles and Fields of The Mexican Phsyical Society, at the IX Mexican Workshop on Particles and Fields; submitted for proceedings; 9 pages, 9 figures; replacement: fix multiple typo

Voltage modulated electro-luminescence spectroscopy and negative capacitance - the role of sub-bandgap states in light emitting devices

Voltage modulated electroluminescence spectra and low frequency ({\leq} 100 kHz) impedance characteristics of electroluminescent diodes are studied. Voltage modulated light emission tracks the onset of observed negative capacitance at a forward bias level for each modulation frequency. Active participation of sub-bandgap defect states in minority carrier recombination dynamics is sought to explain the results. Negative capacitance is understood as a necessary dielectric response to compensate any irreversible transient changes in the minority carrier reservoir due to radiative recombinations mediated by slowly responding sub-bandgap defects. Experimentally measured variations of the in-phase component of modulated electroluminescence spectra with forward bias levels and modulation frequencies support the dynamic influence of these states in the radiative recombination process. Predominant negative sign of the in-phase component of voltage modulated electroluminescence signal further confirms the bi-molecular nature of light emission. We also discuss how these states can actually affect the net density of minority carriers available for radiative recombination. Results indicate that these sub-bandgap states can suppress external quantum efficiency of such devices under high frequency operation commonly used in optical communication.Comment: 21 pages, 4 sets of figure

Generalized four-point characterization method for resistive and capacitive contacts

In this paper, a four-point characterization method is developed for resistive samples connected to either resistive or capacitive contacts. Provided the circuit equivalent of the complete measurement system is known including coaxial cable and connector capacitances as well as source output and amplifier input impedances, a frequency range and capacitive scaling factor can be determined, whereby four-point characterization can be performed. The technique is demonstrated with a discrete element test sample over a wide frequency range using lock-in measurement techniques from 1 Hz - 100 kHz. The data fit well with a circuit simulation of the entire measurement system. A high impedance preamplifier input stage gives best results, since lock-in input impedances may differ from manufacturer specifications. The analysis presented here establishes the utility of capacitive contacts for four-point characterizations at low frequency.Comment: 21 pages, 10 figure

Globular Clusters in the dE,N galaxy NGC 3115 DW1: New Insights from Spectroscopy and HST Photometry

The properties of globular clusters in dwarf galaxies are key to understanding the formation of globular cluster systems, and in particular in verifying scenarios in which globular cluster systems of larger galaxies formed (at least partly) from the accretion of dwarf galaxies. Here, we revisit the globular cluster system of the dE,N galaxy NGC 3115 DW1 - a companion of the nearby S0 galaxy NGC 3115 - adding Keck/LRIS spectroscopy and HST/WFPC2 imaging to previous ground-based photometry. Spectra for seven globular clusters reveal normal abundance ratios with respect to the Milky Way and M31 clusters, as well as a relatively high mean metallicity ([Fe/H] = -1.0+/-0.1 dex). Crude kinematics indicate a high velocity dispersion within 10 kpc which could either be caused by dark matter dominated outer regions, or by the stripping of outer globular clusters by the nearby giant galaxy NGC 3115. The total galaxy mass out to 3 and 10 kpc lies between 10^10 and 10^11 solar masses and 2*10^10 and 4*10^11 solar masses, respectively, depending on the mass estimator used and the assumptions on cluster orbits and systemic velocity. The HST imaging allows measurement of sizes for two clusters, returning core radii around 2.0 pc, similar to the sizes observed in other galaxies. Spectroscopy allows an estimate of the degree of contamination by foreground stars or background galaxies for the previous ground-based photometry, but does not require a revision of previous results: NGC 3115 DW1 hosts around 60+/-20 clusters which corresponds to a specific frequency of 4.9+/-1.9, on the high end for massive dEs. Given its absolute magnitude (M_V=-17.7 mag) and the properties of its cluster system, NGC 3115 DW1 appears to be a transition between a luminous dE and low-luminosity E galaxy.Comment: 25 pages, 8 figures, accepted for publication in The Astronomical Journal, August 2000 issu