Counterflow measurements in strongly correlated GaAs hole bilayers: evidence for electron-hole pairing

We study interacting GaAs bilayer hole systems, with very small interlayer tunneling, in a counterflow geometry where equal currents are passed in opposite directions in the two, independently contacted layers. At low temperatures, both the longitudinal and Hall counterflow resistances tend to vanish in the quantum Hall state at total bilayer filling $\nu=1$, demonstrating the pairing of oppositely charged carriers in opposite layers. The temperature dependence of the counterflow Hall resistance is anomalous compared to the other transport coefficients: even at relatively high temperatures ($\sim$600mK), it develops a very deep minimum, with a value that is about an order of magnitude smaller than the longitudinal counterflow resistivity.Comment: 4+ pages, 4 figure

Evidence for charge-flux duality near the quantum Hall liquid to insulator transition

We examine the longitudinal, non-linear, current-voltage characteristics near the quantum Hall liquid to insulator transition and show that a simple mapping exists between the characteristics on the quantum Hall side and those on the insulating side of the transition. More precisely, at filling factors related by the law of corresponding states the current and voltage simply trade places. We interpret these observations as evidence for the existence, in the composite boson description, of charge-flux duality near disorder dominated transitions in quantum Hall systems. (Appearances notwithstanding, this is an experimental paper.)Comment: 10 pages, Revtex 3.0, 4 uuencoded postscript figure

Anomalous robustness of the 5/2 fractional quantum Hall state near a sharp phase boundary

We report magneto-transport measurements in wide GaAs quantum wells with tunable density to probe the stability of the fractional quantum Hall effect at filling factor $\nu =$ 5/2 in the vicinity of the crossing between Landau levels (LLs) belonging to the different (symmetric and antisymmetric) electric subbands. When the Fermi energy ($E_F$) lies in the excited-state LL of the symmetric subband, the 5/2 quantum Hall state is surprisingly stable and gets even stronger near this crossing, and then suddenly disappears and turns into a metallic state once $E_F$ moves to the ground-state LL of the antisymmetric subband. The sharpness of this disappearance suggests a first-order transition

Anisotropic Fermi Contour of (001) GaAs Electrons in Parallel Magnetic Fields

We demonstrate a severe Fermi contour anisotropy induced by the application of a parallel magnetic field to high-mobility electrons confined to a 30-nm-wide (001) GaAs quantum well. We study commensurability oscillations, namely geometrical resonances of the electron orbits with a unidirectional, surface-strain-induced, periodic potential modulation, to directly probe the size of the Fermi contours along and perpendicular to the parallel field. Their areas are obtained from the Shubnikov-de Haas oscillations. Our experimental data agree semi-quantitatively with the results of parameter-free calculations of the Fermi contours but there are significant discrepancies.Comment: 5 pages, 5 figure

Anisotropic composite fermions and fractional quantum Hall effect

We study the role of anisotropy on the transport properties of composite fermions near Landau level filling factor $\nu=1/2$ in two-dimensional holes confined to a GaAs quantum well. By applying a parallel magnetic field, we tune the composite fermion Fermi sea anisotropy and monitor the relative change of the transport scattering time at $\nu=1/2$ along the principal directions. Interpreted in a simple Drude model, our results suggest that the scattering time is longer along the longitudinal direction of the composite fermion Fermi sea. Furthermore, the measured energy gap for the fractional quantum Hall state at $\nu=2/3$ decreases when anisotropy becomes significant. The decrease, however, might partly stem from the charge distribution becoming bilayer-like at very large parallel magnetic fields

Anisotropic Fermi Contour of (001) GaAs Holes in Parallel Magnetic Fields

We report a severe, spin-dependent, Fermi contour anisotropy induced by parallel magnetic field in a high-mobility (001) GaAs two-dimensional hole system. Employing commensurability oscillations created by a unidirectional, surface-strain-induced, periodic potential modulation, we directly probe the anisotropy of the two spin subband Fermi contours. Their areas are obtained from the Fourier transform of the Shubnikov-de Haas oscillations. Our findings are in semi-quantitative agreement with the results of parameter-free calculations of the energy bands.Comment: 4 pages, 4 figure