Nonlinear charge injection in organic field-effect transistors

Transport properties of a series of poly(3-hexylthiophene) organic field effect transistors with Cr, Cu and Au source/drain electrodes were examined over a broad temperature range. The current-voltage characteristics of the injecting contacts are extracted from the dependence of conductance on channel length. With reasonable parameters, a model of hopping injection into a disordered density of localized states, with emphasis on the primary injection event, agrees well with the field and the temperature dependence of the data over a broad range of temperatures and gate voltages.Comment: 7 pages, 7 figures, sub. to J. Appl. Phy

Flicker Noise in Bilayer Graphene Transistors

We present the results of the experimental investigation of the low - frequency noise in bilayer graphene transistors. The back - gated devices were fabricated using the electron beam lithography and evaporation. The charge neutrality point for the fabricated transistors was around 10 V. The noise spectra at frequencies above 10 - 100 Hz were of the 1/f - type with the spectral density on the order of 10E-23 - 10E-22 A2/Hz at the frequency of 1 kHz. The deviation from the 1/f spectrum at the frequencies below 10 -100 Hz indicates that the noise is of the carrier - number fluctuation origin due to the carrier trapping by defects. The Hooge parameter of 10E-4 was extracted for this type of devices. The gate dependence of the noise spectral density suggests that the noise is dominated by the contributions from the ungated part of the device channel and by the contacts. The obtained results are important for graphene electronic applications

Transition Property for α\alpha-Power Free Languages with α≥2\alpha\geq 2 and k≥3k\geq 3 Letters

In 1985, Restivo and Salemi presented a list of five problems concerning power free languages. Problem $4$ states: Given $\alpha$-power-free words $u$ and $v$, decide whether there is a transition from $u$ to $v$. Problem $5$ states: Given $\alpha$-power-free words $u$ and $v$, find a transition word $w$, if it exists. Let $\Sigma_k$ denote an alphabet with $k$ letters. Let $L_{k,\alpha}$ denote the $\alpha$-power free language over the alphabet $\Sigma_k$, where $\alpha$ is a rational number or a rational "number with $+$". If $\alpha$ is a "number with $+$" then suppose $k\geq 3$ and $\alpha\geq 2$. If $\alpha$ is "only" a number then suppose $k=3$ and $\alpha>2$ or $k>3$ and $\alpha\geq 2$. We show that: If $u\in L_{k,\alpha}$ is a right extendable word in $L_{k,\alpha}$ and $v\in L_{k,\alpha}$ is a left extendable word in $L_{k,\alpha}$ then there is a (transition) word $w$ such that $uwv\in L_{k,\alpha}$. We also show a construction of the word $w$

Field induced evolution of regular and random 2D domain structures and shape of isolated domains in LiNbO₃ and LiTaO₃

The shapes of isolated domains produced by application of the uniform external electric field in different experimental conditions were investigated experimentally in single crystalline lithium niobate LiNbO3 and lithium tantalate LiTaO3. The study of the domain kinetics by computer simulation and experimentally by polarization reversal of the model structure using two-dimensional regular electrode pattern confirms applicability of the kinetic approach to explanation of the experimentally observed evolution of the domain shape and geometry of the domain structure. It has been shown that the fast domain walls strictly oriented along X directions appear after domain merging

Negative terahertz conductivity in disordered graphene bilayers with population inversion

The gapless energy band spectra make the structures based on graphene and graphene bilayers with the population inversion created by optical or injection pumping to be promising media for the interband terahertz (THz) lasing. However, a strong intraband absorption at THz frequencies still poses a challenge for efficient THz lasing. In this paper, we show that in the pumped graphene bilayer structures, the indirect interband radiative transitions accompanied by scattering of carriers caused by disorder can provide a substantial negative contribution to the THz conductivity (together with the direct interband transitions). In the graphene bilayer structures on high-$\kappa$ substrates with point charged defects, these transitions almost fully compensate the losses due to the intraband (Drude) absorption. We also demonstrate that the indirect interband contribution to the THz conductivity in a graphene bilayer with the extended defects (such as the charged impurity clusters, surface corrugation, and nanoholes) can surpass by several times the fundamental limit associated with the direct interband transitions and the Drude conductivity. These predictions can affect the strategy of the graphene-based THz laser implementation.Comment: 5 pages, 4 figure

Formation of dendrite domain structures in stoichiometric lithium niobate at elevated temperatures

Formation of the dendrite-type self-organized domain structures during polarization reversal at elevated temperatures (above 230°C) has been revealed and studied in stoichiometric lithium niobate LiNbO3 single crystals. Optical, confocal Raman, scanning electron, and piezoelectric force microscopy have been used for domain visualization. It has been shown experimentally that formation of the dendrite-like structures has been attributed to correlated nucleation caused by a field distribution in the vicinity of the charged domain walls. © 2012 American Institute of Physics

The MRO-accompanied modes of Re-implantation into SiO2-host matrix: XPS and DFT based scenarios

The following scenarios of Re-embedding into SiO2-host by pulsed Re-implantation were derived and discussed after XPS-and-DFT electronic structure qualification: (i) low Re-impurity concentration mode -> the formation of combined substitutional and interstitial impurities with Re2O7-like atomic and electronic structures in the vicinity of oxygen vacancies; (ii) high Re-impurity concentration mode -> the fabrication of interstitial Re-metal clusters with the accompanied formation of ReO2-like atomic structures and (iii) an intermediate transient mode with Re-impurity concentration increase, when the precursors of interstitial defect clusters are appeared and growing in the host-matrix structure occur. An amplification regime of Re-metal contribution majority to the final Valence Band structure was found as one of the sequences of intermediate transient mode. It was shown that most of the qualified and discussed modes were accompanied by the MRO (middle range ordering) distortions in the initial oxygen subnetwork of the a-SiO2 host-matrix because of the appeared mixed defect configurations.Comment: 19 pages, 7 figures, accepted to J. Alloys and Compound