Gate Coupling to Nanoscale Electronics

The realization of single-molecule electronic devices, in which a nanometer-scale molecule is connected to macroscopic leads, requires the reproducible production of highly ordered nanoscale gaps in which a molecule of interest is electrostatically coupled to nearby gate electrodes. Understanding how the molecule-gate coupling depends on key parameters is crucial for the development of high-performance devices. Here we directly address this, presenting two- and three-dimensional finite-element electrostatic simulations of the electrode geometries formed using emerging fabrication techniques. We quantify the gate coupling intrinsic to these devices, exploring the roles of parameters believed to be relevant to such devices. These include the thickness and nature of the dielectric used, and the gate screening due to different device geometries. On the single-molecule (~1nm) scale, we find that device geometry plays a greater role in the gate coupling than the dielectric constant or the thickness of the insulator. Compared to the typical uniform nanogap electrode geometry envisioned, we find that non-uniform tapered electrodes yield a significant three orders of magnitude improvement in gate coupling. We also find that in the tapered geometry the polarizability of a molecular channel works to enhance the gate coupling

Gate Stack Dielectric Degradation of Rare-Earth Oxides Grown on High Mobility Ge Substrates

We report on the dielectric degradation of Rare-Earth Oxides (REOs), when used as interfacial buffer layers together with HfO2 high-k films (REOs/HfO2) on high mobility Ge substrates. Metal-Oxide-Semiconductor (MOS) devices with these stacks,show dissimilar charge trapping phenomena under varying levels of Constant- Voltage-Stress (CVS) conditions, which also influences the measured densities of the interface (Nit) and border (NBT) traps. In the present study we also report on C-Vg hysteresis curves related to Nit and NBT. We also propose a new model based on Maxwell-Wagner instabilities mechanism that explains the dielectric degradations (current decay transient behavior) of the gate stack devices grown on high mobility substrates under CVS bias from low to higher fields, and which is unlike to those used for other MOS devices. Finally, the time dependent degradation of the corresponding devices revealed an initial current decay due to relaxation, followed by charge trapping and generation of stress-induced leakage which eventually lead to hard breakdown after long CVS stressing.Comment: 19pages (double space), 7 figures, original research article, Submitted to JAP (AIP

The Geometry of D=11 Null Killing Spinors

We determine the necessary and sufficient conditions on the metric and the four-form for the most general bosonic supersymmetric configurations of D=11 supergravity which admit a null Killing spinor i.e. a Killing spinor which can be used to construct a null Killing vector. This class covers all supersymmetric time-dependent configurations and completes the classification of the most general supersymmetric configurations initiated in hep-th/0212008.Comment: 30 pages, typos corrected, reference added, new solution included in section 5.1; uses JHEP3.cl

Determining Absorption, Emissivity Reduction, and Local Suppression Coefficients inside Sunspots

The power of solar acoustic waves is reduced inside sunspots mainly due to absorption, emissivity reduction, and local suppression. The coefficients of these power-reduction mechanisms can be determined by comparing time-distance cross-covariances obtained from sunspots and from the quiet Sun. By analyzing 47 active regions observed by SOHO/MDI without using signal filters, we have determined the coefficients of surface absorption, deep absorption, emissivity reduction, and local suppression. The dissipation in the quiet Sun is derived as well. All of the cross-covariances are width corrected to offset the effect of dispersion. We find that absorption is the dominant mechanism of the power deficit in sunspots for short travel distances, but gradually drops to zero at travel distances longer than about 6 degrees. The absorption in sunspot interiors is also significant. The emissivity-reduction coefficient ranges from about 0.44 to 1.00 within the umbra and 0.29 to 0.72 in the sunspot, and accounts for only about 21.5% of the umbra's and 16.5% of the sunspot's total power reduction. Local suppression is nearly constant as a function of travel distance with values of 0.80 and 0.665 for umbrae and whole sunspots respectively, and is the major cause of the power deficit at large travel distances.Comment: 14 pages, 21 Figure

M-Theory solutions with AdS factors

Solutions of D=7 maximal gauged supergravity are constructed with metrics that are a product of a n-dimensional anti-de Sitter (AdS) space, with n=2,3,4,5, and certain Einstein manifolds. The gauge fields have the same form as in the recently constructed solutions describing the near-horizon limits of M5-branes wrapping supersymmetric cycles. The new solutions do not preserve any supersymmetry and can be uplifted to obtain new solutions of D=11 supergravity, which are warped and twisted products of the D=7 metric with a squashed four-sphere. Some aspects of the stability of the solutions are discussed.Comment: 30 pages. References adde

Producing Enactable Protocols in Artificial Agent Societies

This paper draws upon our previous work [7, 16] in which we proposed the organisation of services around the concept of artificial agent societies and presented a framework for representing roles and protocols using LTSs. The agent would apply for a role in the society, which would result in its participation in a number of protocols. We advocated the use of the games-based metaphor for describing the protocols and presented a framework for assessing the admission of the agent to the society on the basis of its competence. In this work we look at the subsequent question: what information should the agent receive upon entry?. We can not provide it with the full protocol because of security and overload issues. Therefore, we choose to only provide the actions pertinent to the protocols that the role the agent applied for participates in the society. We employ branching bisimulation for producing a protocol equivalent to the original one with all actions not involving the role translated into silent (τ) actions. However, this approach sometimes results in non-enactable protocols. In this case, we need to repair the protocol by adding the role in question as a recipient to certain protocol messages that were causing the problems. We present three different approaches for repairing protocols, depending on the number of messages from the original protocol they modify. The modified protocol is adopted as the final one and the agent is given the role automaton that is derived from the branching bisimulation process

A multi-gene signature predicts outcome in patients with pancreatic ductal adenocarcinoma.

© 2014 Haider et al.; licensee BioMed Central. This is an Open Access article distributed under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0), which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly credited. The Creative Commons Public Domain Dedication waiver (http://creativecommons.org/publicdomain/zero/1.0/) applies to the data made available in this article, unless otherwise stated.Improved usage of the repertoires of pancreatic ductal adenocarcinoma (PDAC) profiles is crucially needed to guide the development of predictive and prognostic tools that could inform the selection of treatment options