Models of MOS and SOS devices

Quarterly report describes progress in three programs: dc sputtering machine for aluminum and aluminum alloys; two dimensional computer modeling of MOS transistors; and development of computer techniques for calculating redistribution diffusion of dopants in silicon on sapphire films

Post heat treatment effects on double layer metal structures for VLSI applications

The realization of high yield double layer metal systems using wet chemistry processes and the ability to extend yields beyond that attainable with wet chemistry by means of post sintering processes at temperatures below 500 C for potential applications in very large scale integration structures were studied. Yields in excess of 98% and average total contact resistance of less than 150 ohms and 200 ohms were realized for a series of 560 vias of 0.5 X 0.5 mils and 0.2 X 0.2 mils in size, respectively

Trends and Techniques for Space Base Electronics

Simulations of various phosphorus and boron diffusions in SOS were completed and a sputtering system, furnaces, and photolithography related equipment were set up. Double layer metal experiments initially utilized wet chemistry techniques. By incorporating ultrasonic etching of the vias, premetal cleaning a modified buffered HF, phosphorus doped vapox, and extended sintering, yields of 98% were obtained using the standard test pattern. A two dimensional modeling program was written for simulating short channel MOSFETs with nonuniform substrate doping. A key simplifying assumption used is that the majority carriers can be represented by a sheet charge at the silicon dioxide silicon interface. Although the program is incomplete, the two dimensional Poisson equation for the potential distribution was achieved. The status of other Z-D MOSFET simulation programs is summarized

A study of trends and techniques for space base electronics

The use of dry processing and alternate dielectrics for processing wafers is reported. A two dimensional modeling program was written for the simulation of short channel MOSFETs with nonuniform substrate doping. A key simplifying assumption used is that the majority carriers can be represented by a sheet charge at the silicon dioxide-silicon interface. In solving current continuity equation, the program does not converge. However, solving the two dimensional Poisson equation for the potential distribution was achieved. The status of other 2D MOSFET simulation programs are summarized

Electron lithography STAR design guidelines. Part 1: The STAR user design manual

The STAR system developed by NASA enables any user with a logic diagram to design a semicustom digital MOS integrated circuit. The system is comprised of a library of standard logic cells and computer programs to place, route, and display designs implemented with cells from the library. Library cells of the CMOS metal gate and CMOS silicon gate technologies were simulated using SPICE, and the results are shown and compared

A study of trends and techniques for space base electronics

A sputtering system was developed to deposit aluminum and aluminum alloys by the dc sputtering technique. This system is designed for a high level of cleanliness and for monitoring the deposition parameters during film preparation. This system is now ready for studying the deposition and annealing parameters upon double-level metal preparation. A technique recently applied for semiconductor analysis, the finite element method, was studied for use in the computer modeling of two dimensional MOS transistor structures. It was concluded that the method has not been sufficiently well developed for confident use at this time. An algorithm was developed for confident use at this time. An algorithm was developed for implementing a computer study which is based upon the finite difference method. The program which was developed was modified and used to calculate redistribution data for boron and phosphorous which had been predeposited by ion implantation with range and straggle conditions. Data were generated for 111 oriented SOS films with redistribution in N2, dry O2 and steam ambients

Trends and techniques for space base electronics

A system was developed for depositing aluminum and aluminum alloys by the D.C. sputtering technique. This system which was designed for a high level of cleanliness and ion monitoring the deposition parameters during film preparation is ready for studying the deposition and annealing parameters upon double level metal preparation. The finite element method was studied for use in the computer modeling of two dimensional MOS transistor structures. An algorithm was developed for implementing a computer study which is based upon the finite difference method. The program was modified and used to calculate redistribution data for boron and phosphorous which had been predeposited by ion implantation with range and straggle conditions typical of those used at MSFC. Data were generated for 111 oriented SOS films with redistribution in N2, dry O2 and steam ambients. Data are given showing both two dimensional effects and the evolution of the junction depth, sheet resistance and integrated dose with redistribution time

Small-scale, nature-based tourism as a pro-poor development intervention : two examples in Kwazulu-Natal, South Africa

Tourism is widely acknowledged as a key economic sector that has the potential to contribute to national and local development and, more specifically, serve as a mechanism to promote poverty alleviation and pro-poor development within a particular locality. In countries of the global South, nature-based tourism initiatives can make a meaningful impact on the livelihoods of the poor, in particular the subsistence based rural poor. Taking two examples in KwaZulu-Natal Province, South Africa, where small-scale tourism initiatives were developed recently in response to existing natural attractions in the context of coping with local economic crises, this paper broadly assesses the modest benefits to date, as well as drawbacks, in improving conditions of life