Free Charge Carrier Generation by Visible Light Absorbing Organic Spacers in Ruddlesden Popper Layered Perovskites

Incorporating organic semiconductor building blocks as spacer cations into layered hybrid perovskites provides an opportunity to develop new materials with novel optoelectronic properties, including nanoheterojunctions that afford spatial separation of electron and hole transport. However, identifying organics with suitable structure and electronic energy levels to selectively absorb visible light has been a challenge in the field. In this work, we introduce a new lead halide based Ruddlesden Popper perovskite structure based on a visible light absorbing naphthalene iminoimide cation NDI DAE . Thin films of NDI DAE 2PbI4 show a quenched photoluminescence and transient absorption dynamics consistent with the formation of a charge transfer state or free charge carriers when either the inorganic or organic layer is photoexcited, suggesting the formation of a type II nanoheterostructure. Time resolved microwave conductivity analysis supports free charge generation with sum mobilities up to 4 10 4 cm2 V 1 s 1. Mixed halide NDI DAE 2Pb IxBr1 x 4 films show modified inorganic layer band gaps and a photoluminescent reversed type I nanoheterostructure with high bromide content e.g., for x 0 . At x 0.5, transient absorption and microwave conductivity measurements provide strong evidence that selective visible light absorbance by the NDI DAE cation generates separated free carriers via hole transfer to the inorganic layer leaving photogenerated electrons in the organic layer , which represents an important step toward enhancing light harvesting and affording the spatial separation of charge carrier transport in stable layered perovskite based device

Gallium hydride vapor phase epitaxy of GaN nanowires

Straight GaN nanowires (NWs) with diameters of 50 nm, lengths up to 10 μm and a hexagonal wurtzite crystal structure have been grown at 900°C on 0.5 nm Au/Si(001) via the reaction of Ga with NH3 and N2:H2, where the H2 content was varied between 10 and 100%. The growth of high-quality GaN NWs depends critically on the thickness of Au and Ga vapor pressure while no deposition occurs on plain Si(001). Increasing the H2 content leads to an increase in the growth rate, a reduction in the areal density of the GaN NWs and a suppression of the underlying amorphous (α)-like GaN layer which occurs without H2. The increase in growth rate with H2 content is a direct consequence of the reaction of Ga with H2 which leads to the formation of Ga hydride that reacts efficiently with NH3 at the top of the GaN NWs. Moreover, the reduction in the areal density of the GaN NWs and suppression of the α-like GaN layer is attributed to the reaction of H2 with Ga in the immediate vicinity of the Au NPs. Finally, the incorporation of H2 leads to a significant improvement in the near band edge photoluminescence through a suppression of the non-radiative recombination via surface states which become passivated not only via H2, but also via a reduction of O2-related defects

The nitridation of ZnO nanowires

ZnO nanowires (NWs) with diameters of 50 to 250 nm and lengths of several micrometres have been grown by reactive vapour transport via the reaction of Zn with oxygen on 1 nm Au/Si(001) at 550°C under an inert flow of Ar. These exhibited clear peaks in the X-ray diffraction corresponding to the hexagonal wurtzite crystal structure of ZnO and a photoluminescence spectrum with a peak at 3.3 eV corresponding to band edge emission close to 3.2 eV determined from the abrupt onset in the absorption-transmission through ZnO NWs grown on 0.5 nm Au/quartz. We find that the post growth nitridation of ZnO NWs under a steady flow of NH3 at temperatures ≤600°C promotes the formation of a ZnO/Zn3N2 core-shell structure as suggested by the suppression of the peaks related to ZnO and the emergence of new ones corresponding to the cubic crystal structure of Zn3N2 while maintaining their integrity. Higher temperatures lead to the complete elimination of the ZnO NWs. We discuss the effect of nitridation time, flow of NH3, ramp rate and hydrogen on the conversion and propose a mechanism for the nitridation

Femtosecond Carrier Dynamics in In2O3Nanocrystals

We have studied carrier dynamics in In2O3nanocrystals grown on a quartz substrate using chemical vapor deposition. Transient differential absorption measurements have been employed to investigate the relaxation dynamics of photo-generated carriers in In2O3nanocrystals. Intensity measurements reveal that Auger recombination plays a crucial role in the carrier dynamics for the carrier densities investigated in this study. A simple differential equation model has been utilized to simulate the photo-generated carrier dynamics in the nanocrystals and to fit the fluence-dependent differential absorption measurements. The average value of the Auger coefficient obtained from fitting to the measurements was γ = 5.9 ± 0.4 × 10−31 cm6 s−1. Similarly the average relaxation rate of the carriers was determined to be approximately τ = 110 ± 10 ps. Time-resolved measurements also revealed ~25 ps delay for the carriers to reach deep traps states which have a subsequent relaxation time of approximately 300 ps

Low Temperature Growth of In2O3and InN Nanocrystals on Si(111) via Chemical Vapour Deposition Based on the Sublimation of NH4Cl in In

Indium oxide (In2O3) nanocrystals (NCs) have been obtained via atmospheric pressure, chemical vapour deposition (APCVD) on Si(111) via the direct oxidation of In with Ar:10% O2at 1000 °C but also at temperatures as low as 500 °C by the sublimation of ammonium chloride (NH4Cl) which is incorporated into the In under a gas flow of nitrogen (N2). Similarly InN NCs have also been obtained using sublimation of NH4Cl in a gas flow of NH3. During oxidation of In under a flow of O2the transfer of In into the gas stream is inhibited by the formation of In2O3around the In powder which breaks up only at high temperatures, i.e.T > 900 °C, thereby releasing In into the gas stream which can then react with O2leading to a high yield formation of isolated 500 nm In2O3octahedrons but also chains of these nanostructures. No such NCs were obtained by direct oxidation forTG < 900 °C. The incorporation of NH4Cl in the In leads to the sublimation of NH4Cl into NH3and HCl at around 338 °C which in turn produces an efficient dispersion and transfer of the whole In into the gas stream of N2where it reacts with HCl forming primarily InCl. The latter adsorbs onto the Si(111) where it reacts with H2O and O2leading to the formation of In2O3nanopyramids on Si(111). The rest of the InCl is carried downstream, where it solidifies at lower temperatures, and rapidly breaks down into metallic In upon exposure to H2O in the air. Upon carrying out the reaction of In with NH4Cl at 600 °C under NH3as opposed to N2, we obtain InN nanoparticles on Si(111) with an average diameter of 300 nm

(Invited) Optical Response of II-VI ZnSe Nanowires

II-VI nanowires offer a unique combination of properties for developing blue/UV optoelectronic devices. Key to realizing this potential is managing the nanowire growth process to ensure appropriate properties are realized. Taking ZnSe as an example, we report on the influence of growth conditions (namely, growth temperature and constituent flux ratio) on optimizing the luminescence response. It is shown that native defects ultimately dictate properties including steady state photoluminescence, ultra-fast optical response and even nonlinear behavior. We demonstrate how careful control over materials can enable the realization of a state of the art photo-detector based on such nanowires.</jats:p

Comparing the excited-state properties of a mixed-cation-mixed-halide perovskite to methylammonium lead iodide

Organic-inorganic perovskites are one of the most promising photovoltaic materials for the design of next generation solar cells. The lead-based perovskite prepared with methylammonium and iodide was the first in demonstrating high power conversion efficiency, and it remains one of the most used materials today. However, perovskites prepared by mixing several halides and several cations systematically yield higher efficiencies than "pure" methylammonium lead iodide (MAPbI3) devices. In this work, we unravel the excited-state properties of a mixed-halide (iodide and bromide) and mixed-cation (methylammonium and formamidinium) perovskite. Combining time-resolved photoluminescence, transient absorption, and optical-pump-terahertz-probe experiments with density functional theory calculations, we show that the population of higher-lying excited states in the mixed material increases the lifetime of photogenerated charge carriers upon well above-bandgap excitation. We suggest that alloying different halides and different cations reduces the structural symmetry of the perovskite, which partly releases the selection rules to populate the higher-energy states upon light absorption. Our investigation thus shows that mixed halide perovskites should be considered as an electronically different material than MAPbI3, paving the way toward further materials optimization and improved power conversion efficiency of perovskite solar cells