Design, synthesis, conjugation and reactivity of novel trans,trans-1,5-cyclooctadiene-derived bioorthogonal linkers

Funding Information: The authors thank Irene Feiner, Marion van Leeuwen-Chomet, and Joey Muns for their helpful insight. We acknowledge financial support from the University of Aberdeen and European Union’s Horizon 2020 research and innovation programme under the Marie Skłodowska-Curie grant agreement no. 675417.Peer reviewedPostprin

A comparative study of electrical and optical properties of InN and In0.48Ga0.52N

We present results of our studies concerning electrical and optical properties of In0.48Ga0.52N and InN. Hall measurement were carried out at temperatures between T=77 and 300 K. Photoluminescence (PL) spectrum in InN and In0.48Ga0.52N. InN has a single peak at 0.77 eV at 300 K. However, the PL in In0.48Ga0.52N has two peaks; a prominent peak at 1.16 eV and a smaller peak at 1.55 eV. These two peaks are attributed to Indium segregation corresponding to a high Indium concentration of 48% and a low concentration of 36%. High electric field measurements indicate that drift velocity that tends to saturate at around Vd=1.0×107 cm/s at 77 K in InN at an electric field of F=12 kV/cm. However, in In0.48Ga0.52N the I–V curve is almost linear up to an electric field of F=45 kV/cm, where the drift velocity is Vd=1.39×106 cm/s. At applied electric fields above this value a S-type negative differential resistance (NDR) is observed leading to an instability in the current and to the irreversible destruction of the sample

In-plane photovoltage measurements on MBE grown InN

Temperature dependent measurements of the in-plane photovoltage (IPV) arising from Fermi level fluctuations constitute a powerful tool for determining surface and bulk states and trap activation energies in nominally undoped semiconductors. In this work we report the first IPV measurements on high quality InN grown using the MBE technique. The temperature dependent IPV results coupled with Hall mobility and carrier density measurements provide ample evidence for the existence of a high density of states within the range 54 to 68 meV below the conduction band. Temperature dependent PL measurements indicate a band gap of 0.77 eV where a very weak temperature dependence is observed between 77 and 300 K. These results are shown to be in accord with the lPV measurements. (C) 2004 Elsevier Ltd. All rights reserved

Adolescenti e self-cutters: analisi di una popolazione

Nonsuicidal self-injury (NSSI), defined as the deliberate destruction of body tissue without suicidal intent, is a multifaceted phenomenon among adolescents as well as representing a major health issue in this age. A better understanding of self-injury comorbidities is therefore crucial to improve our knowledge in terms of assessment, treatment and prevention. A review of 23 self harming patientsIt is presented

Enantiomer-specific positive allosteric modulation of CB1_1 signaling in autaptic hippocampal neurons

The cannabinoid signaling system is found throughout the CNS and its involvement in several pathological processes makes it an attractive therapeutic target. Because orthosteric CB$_1$ cannabinoid receptor ligands have undesirable adverse effects there has been great interest in the development of allosteric modulators – both negative (NAMs) and positive (PAMs) – of these receptors. NAMs of CB$_1$ appeared first on the scene, followed more recently by PAMs. Because allosteric modulation can vary depending on the orthosteric ligand it is important to study their function in a system that employs endogenous cannabinoids. We have recently surveyed first generation NAMs using cultured autaptic hippocampal neurons. These neurons ex depolarization induced suppression of excitation (DSE), a form of synaptic plasticity that is mediated by CB$_1$ and 2-arachidonoyl glycerol (2-AG); they are therefore an excellent neuronal model of endogenous cannabinoid signaling in which to test CB$_1$ modulators