Generation of spin currents via Raman scattering

We show theoretically that stimulated spin flip Raman scattering can be used to inject spin currents in doped semiconductors with spin split bands. A pure spin current, where oppositely oriented spins move in opposite directions, can be injected in zincblende crystals and structures. The calculated spin current should be detectable by pump-probe optical spectroscopy and anomalous Hall effect measurement

Electronic structure of the muonium center as a shallow donor in ZnO

The electronic structure and the location of muonium centers (Mu) in single-crystalline ZnO were determined for the first time. Two species of Mu centers with extremely small hyperfine parameters have been observed below 40 K. Both Mu centers have an axial-symmetric hyperfine structure along with a [0001] axis, indicating that they are located at the AB_{O,//} and BC_{//} sites. It is inferred from their small ionization energy (~6 meV and 50 meV) and hyperfine parameters (~10^{-4} times the vacuum value) that these centers behave as shallow donors, strongly suggesting that hydrogen is one of the primary origins of n type conductivity in as-grown ZnO.Comment: 4 pages, 4 figures, submitted to PR

Spin relaxation of conduction electrons in bulk III-V semiconductors

Spin relaxation time of conduction electrons through the Elliot-Yafet, D'yakonov-Perel and Bir-Aronov-Pikus mechanisms is calculated theoretically for bulk GaAs, GaSb, InAs and InSb of both $n$- and $p$-type. Relative importance of each spin relaxation mechanism is compared and the diagrams showing the dominant mechanism are constructed as a function of temperature and impurity concentrations. Our approach is based upon theoretical calculation of the momentum relaxation rate and allows understanding of the interplay between various factors affecting the spin relaxation over a broad range of temperature and impurity concentration.Comment: an error in earlier version correcte

Gallium transformation under femtosecond laser excitation: Phase coexistence and incomplete melting

The reversible phase transition induced by femtosecond laser excitation of Gallium has been studied by measuring the dielectric function at 775 nm with ~ 200 fs temporal resolution. The real and imaginary parts of the transient dielectric function were calculated from absolute reflectivity of Gallium layer measured at two different angles of incidence, using Fresnel formulas. The time-dependent electron-phonon effective collision frequency, the heat conduction coefficient and the volume fraction of a new phase were restored directly from the experimental data, and the time and space dependent electron and lattice temperatures in the layer undergoing phase transition were reconstructed without ad hoc assumptions. We converted the temporal dependence of the electron-phonon collision rate into the temperature dependence, and demonstrated, for the first time, that the electron-phonon collision rate has a non-linear character. This temperature dependence converges into the known equilibrium function during the cooling stage. The maximum fraction of a new phase in the laser-excited Gallium layer reached only 60% even when the deposited energy was two times the equilibrium enthalpy of melting. We have also demonstrated that the phase transition pace and a fraction of the transformed material depended strongly on the thickness of the laser-excited Gallium layer, which was of the order of several tens of nanometers for the whole range of the pump laser fluencies up to the damage threshold. The kinetics of the phase transformation after the laser excitation can be understood on the basis of the classical theory of the first-order phase transition while the duration of non-thermal stage appears to be comparable to the sub-picosecond pulse length.Comment: 28 pages, including 9 figs. Submitted to Phys. Rev. B 14 March 200

Nanosized superparamagnetic precipitates in cobalt-doped ZnO

The existence of semiconductors exhibiting long-range ferromagnetic ordering at room temperature still is controversial. One particularly important issue is the presence of secondary magnetic phases such as clusters, segregations, etc... These are often tedious to detect, leading to contradictory interpretations. We show that in our cobalt doped ZnO films grown homoepitaxially on single crystalline ZnO substrates the magnetism unambiguously stems from metallic cobalt nano-inclusions. The magnetic behavior was investigated by SQUID magnetometry, x-ray magnetic circular dichroism, and AC susceptibility measurements. The results were correlated to a detailed microstructural analysis based on high resolution x-ray diffraction, transmission electron microscopy, and electron-spectroscopic imaging. No evidence for carrier mediated ferromagnetic exchange between diluted cobalt moments was found. In contrast, the combined data provide clear evidence that the observed room temperature ferromagnetic-like behavior originates from nanometer sized superparamagnetic metallic cobalt precipitates.Comment: 20 pages, 6 figures; details about background subtraction added to section III. (XMCD

Graphene as a quantum surface with curvature-strain preserving dynamics

We discuss how the curvature and the strain density of the atomic lattice generate the quantization of graphene sheets as well as the dynamics of geometric quasiparticles propagating along the constant curvature/strain levels. The internal kinetic momentum of Riemannian oriented surface (a vector field preserving the Gaussian curvature and the area) is determined.Comment: 13p, minor correction

Toward homochiral protocells in noncatalytic peptide systems

The activation-polymerization-epimerization-depolymerization (APED) model of Plasson et al. has recently been proposed as a mechanism for the evolution of homochirality on prebiotic Earth. The dynamics of the APED model in two-dimensional spatially-extended systems is investigated for various realistic reaction parameters. It is found that the APED system allows for the formation of isolated homochiral proto-domains surrounded by a racemate. A diffusive slowdown of the APED network such as induced through tidal motion or evaporating pools and lagoons leads to the stabilization of homochiral bounded structures as expected in the first self-assembled protocells.Comment: 10 pages, 5 figure

Electronic structure and magnetic properties of graphitic ribbons

Published versio

Chalcogenide Glasses for All-optical Processing

Copyright © 2006 IEEEChalcogenide glasses, which contain S, Se or Te atoms combined with network forming elements such as Ge, As, Sb have the largest third order optical nonlinearity of any inorganic glass. As a result they are attractive candidates for fibre and waveguide devices for all-optical signal processing in the telecommunications bands. In this talk I will review our recent progress in all-optical devices such as regenerators, wavelength converters and other devices in chalcogenide glasses.B. Luther-Davies, S. J. Madden, D-Y Choi, R-P Wang, A. V. Rode, A. Prasad, R. A. Jarvis, D. Moss, B. Eggleton, C. Grillet, M. R. E. Lamont, E. Magi, V. Ta’eed, M. Shookooh-Saremi, N. Baker, I. Littler, L. Fu, M. Rochette, Y. Rua