Epitaxial strain and the magnetic properties of canted antiferromagnetic perovskite NaNiF3 thin films

The perovskite crystal structure is known to exhibit a multitude of interesting physical phenomena owing to the intricate coupling of the electronic and magnetic properties to the structure. Fluoroperovskites offer an alternative chemistry to the much more widely studied oxide materials, which may prove advantageous for applications. It is demonstrated here for the first time that the antiferromagnetic perovskite fluoride, NaNiF3, can be synthesized in thin film form. The films were grown via molecular beam epitaxy on SrTiO3 (100) substrates to produce high quality epitaxial films in the thickness range of 5-50 nm. The Pnma structure of the films was confirmed by x-ray diffraction. There was a decrease in the out-of-plane lattice spacing from the bulk value corresponding to a maximum strain of 1.7% in the thinnest film. Canted antiferromagnetism was measured in all films using magnetometry and a negative change in the antiferromagnetic ordering temperature of ΔTN = - 9.1 ± 0.7 K was observed with increasing strain

Plasmon-enhanced electron-phonon coupling in Dirac surface states of the thin-film topological insulator Bi2Se3

Raman measurements of a Fano-type surface phonon mode associated with Dirac surface states (SS) in Bi2Se3 topological insulator thin films allowed an unambiguous determination of the electron-phonon coupling strength in Dirac SS as a function of film thickness ranging from 2 to 40 nm. A non-monotonic enhancement of the electron-phonon coupling strength with maximum for the 8 - 10 nm thick films was observed. The non-monotonicity is suggested to originate from plasmon-phonon coupling which enhances electron-phonon coupling when free carrier density in Dirac SS increases with decreasing film thickness and becomes suppressed for thinnest films when anharmonic coupling between in-plane and out-of-plane phonon modes occurs. The observed about four-fold enhancement of electron-phonon coupling in Dirac SS of the 8 - 10 nm thick Bi2Se3 films with respect to the bulk samples may provide new insights into the origin of superconductivity in this-type materials and their applications

Effect of Mn doping on ultrafast carrier dynamics in thin films of the topological insulator Bi2Se3

Transient reflectivity (TR) measured at laser photon energy 1.51 eV from the indirectly intersurface coupled topological insulator Bi2-xMnxSe3 films (12 nm thick) revealed a strong dependence of the rise-time and initial decay-time constants on photoexcited carrier density and Mn content. In undoped samples (x = 0), these time constants are exclusively governed by electron-electron and electron-phonon scattering, respectively, whereas in films with x = 0.013 - 0.27 ultrafast carrier dynamics are completely controlled by photoexcited electron trapping by ionized Mn2+ acceptors and their dimers. The shortest decay-time (~0.75 ps) measured for the film with x = 0.27 suggests a great potential of Mn-doped Bi2Se3 films for applications in high-speed optoelectronic devices. Using Raman spectroscopy exploiting similar laser photon energy (1.58 eV), we demonstrate that due to indirect intersurface coupling in the films, the photoexcited electron trapping in the bulk enhances the electron-phonon interaction strength in Dirac surface states

Magnetoelectric properties of 500 nm Cr2O3 films

The linear magnetoelectric effect was measured in 500 nm Cr2O3 films grown by rf sputtering on Al2O3 substrates between top and bottom thin film Pt electrodes. Magnetoelectric susceptibility was measured directly by applying an AC electric field and measuring the induced AC magnetic moment using superconducting quantum interference device magnetometry. A linear dependence of the induced AC magnetic moment on the AC electric field amplitude was found. The temperature dependence of the magnetoelectric susceptibility agreed qualitatively and quantitatively with prior measurements of bulk single crystals, but the characteristic temperatures of the film were lower than those of single crystals. It was also possible to reverse the sign of the magnetoelectric susceptibility by reversing the sign of the magnetic field applied during cooling through the N\'eel temperature. A competition between total magnetoelectric and Zeeman energies is proposed to explain the difference between film and bulk Cr2O3 regarding the cooling field dependence of the magnetoelectric effect.Comment: accepted at Physical Review

Ultrafast carrier dynamics in thin-films of the topological insulator Bi2Se3

Transient reflectivity measurements of thin films, ranging from 6 to 40 nm in thickness, of the topological insulator Bi2Se3 revealed a strong dependence of the carrier relaxation time on the film thickness. For thicker films the relaxation dynamics are similar to those of bulk Bi2Se3, where the contribution of the bulk insulating phase dominates over that of the surface metallic phase. The carrier relaxation time shortens with decreasing film thickness, reaching values comparable to those of noble metals. This effect may result from the hybridization of Dirac cone states at the opposite surfaces for the thinnest films

An Assessment of Performance Measures in the Transportation Development Act

"This report examines the performance measures requirements in California’s Transportation Development Act (TDA) of 1971. The TDA is an important source of funding for the state’s public transit agencies, representing approximately 18 percent of their total (2018) revenue between the TDA’s two funds (LTF and STA). Since the TDA’s passage in 1971, the transit operating environment in California has changed, in some cases dramatically. The state has nearly doubled in population (20.4 million in 1971 to 39.8 million in 2019), traffic has worsened considerably, climate change is now a central public policy focus, and many places around the state are investing heavily in making public transit a viable alternative to driving. Our research examined the TDA’s performance requirements and their effects on the state’s transit operators. We also considered alternative approaches to both transit finance and performance requirements, by studying transit funding programs in 13 other states that invest significant amounts of funding in transit. In brief, we find that the TDA’s use of performance measurements to allocate funding is unusual. The states we studied do not for the most part make funding contingent on performance, thereby avoiding the unproductive and difficult-to-implement “death penalty” (Taylor, 1995) of withholding subsidies for a much-needed public service. In several of the cases analyzed, by contrast, states guarantee specific levels or amounts of funding for transit service.To examine how the TDA’s performance measures are working, we conducted a survey of California transit professionals at agencies and at Regional Transportation Planning Agencies (RTPAs). That California’s aspirations for transit have evolved over the years is reflected in the frequent loopholes and exemptions the legislature has added to the TDA to give struggling operators more latitude to receive funding in order to meet multiple goals and objectives while staying in compliance with a single cost-effectiveness goal. The extent and frequency with which these exemptions have occurred suggests that the larger aims for public transit, and indeed the goals for the TDA program itself, have evolved, and need to be re-thought holistically, rather than incrementally.Accordingly we offer six recommendations concerning transit performance assessment in the TDA.

Coherent control of injection currents in high-quality films of Bi2Se3

Films of the topological insulator Bi2Se3 are grown by molecular beam epitaxy with in-situ reflection high-energy electron diffraction. The films are shown to be high-quality by X-ray reflectivity and diffraction and atomic-force microscopy. Quantum interference control of photocurrents is observed by excitation with harmonically related pulses and detected by terahertz radiation. The injection current obeys the expected excitation irradiance dependence, showing linear dependence on the fundamental pulse irradiance and square-root irradiance dependence of the frequency-doubled optical pulses. The injection current also follows a sinusoidal relative-phase dependence between the two excitation pulses. These results confirm the third-order nonlinear optical origins of the coherently controlled injection current. Experiments are compared to a tight-binding band structure to illustrate the possible optical transitions that occur in creating the injection current.Comment: 11 pages, 3 figure, journal articl

Preparation, characterization, and electrical properties of epitaxial NbO2 thin film lateral devices

Epitaxial NbO2 (110) films, 20 nm thick, were grown by pulsed laser deposition on Al2O3 (0001) substrates. The Ar/O2 total pressure during growth was varied to demonstrate the gradual transformation between NbO2 and Nb2O5 phases, which was verified using x-ray diffraction, x-ray photoelectron spectroscopy, and optical absorption measurements. Electric resistance threshold switching characteristics were studied in a lateral geometry using interdigitated Pt top electrodes in order to preserve the epitaxial crystalline quality of the films. Volatile and reversible transitions between high and low resistance states were observed in epitaxial NbO2 films, while irreversible transitions were found in case of Nb2O5 phase. Electric field pulsed current measurements confirmed thermally-induced threshold switching.Comment: This is an author-created, un-copyedited version of an article accepted for publication in Journal of Physics D: Applied Physics. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at http://dx.doi.org/10.1088/0022-3727/48/33/33530