Probing magnetic order in EELS of chromite spinels using both multiple scattering (FEFF8.2) and DFT (WIEN2k)

The electron energy loss near edge structure on the O K-edge from chromite spinels contains fine structure from the hybridisation of the O p-orbitals and the Cr d-orbitals. Unlike the aluminates, a non-spin polarised calculation of this fine structure differs significantly from experimental observations. This is due to the large magnetic moment on the Cr. Calculations using simplified collinear ordering of the spins and the local spin density approximation give much improved agreement. A real space multiple scattering formalism and a reciprocal space density functional formalism give results in substantial agreement. In general, the actual spin arrangement of these chromites is not known since they are typically frustrated magnetic systems with ordering temperatures in the 10–20 K range. The calculations are based on the hypothesis that dynamic short range order persists to room temperature over the time scale of the interaction with the fast electron. However, it is possible that the observed effects are due to the strong paramagnetism present at room temperatures but which it is not possible to simulate accurately at present

Advanced nanoanalysis of a Hf-based high-<i>k</i> dielectric stack prior to activation

Analytical electron microscopy techniques are used to investigate elemental distributions across a high-&lt;i&gt;k&lt;/i&gt; dielectric stack with a metal gate. Electron energy-loss spectroscopy results from a Si(100)/SiO2/HfO2/TiN/a-Si gate stack confirm the presence of an oxide interfacial phase at the TiN/a-Si interface prior to activation of the stack

Persistent template effect in InAs/GaAs quantum dot bilayers

The dependence of the optical properties of InAs/GaAs quantum dot(QD) bilayers on seed layer growth temperature and second layer InAs coverage is investigated. As the seed layer growth temperature is increased, a low density of large QDs is obtained. This results in a concomitant increase in dot size in the second layer, which extends their emission wavelength, reaching a saturation value of around 1400 nm at room temperature for GaAs-capped bilayers. Capping the second dot layer with InGaAs results in a further extension of the emission wavelength, to 1515 nm at room temperature with a narrow linewidth of 22 meV. Addition of more InAs to high density bilayers does not result in a significant extension of emission wavelength as most additional material migrates to coalesced InAs islands but, in contrast to single layers, a substantial population of regular QDs remains

An electron energy-loss spectroscopy investigation of zeolite dealumination

SIGLEAvailable from British Library Document Supply Centre- DSC:D061582 / BLDSC - British Library Document Supply CentreGBUnited Kingdo

Valence electron spectroscopy of inhomogeneous media

The bulk loss function Im(-l/ε (ω)), a well established tool for the interpretation of valence loss spectra, is being progressively adapted to the wide variety of inhomogeneous samples of interest to the electron microscopist. Proportionality between n, the local valence electron density, and ε-1 (Sellmeyer's equation) has sometimes been assumed but may not be valid even in homogeneous samples. Figs. 1 and 2 show the experimentally measured bulk loss functions for three pure silicates of different specific gravity ρ - quartz (ρ = 2.66), coesite (ρ = 2.93) and a zeolite (ρ = 1.79). Clearly, despite the substantial differences in density, the shift of the prominent loss peak is very small and far less than that predicted by scaling e for quartz with Sellmeyer's equation or even the somewhat smaller shift given by the Clausius-Mossotti (CM) relation which assumes proportionality between n (or ρ in this case) and (ε - 1)/(ε + 2). Both theories overestimate the rise in the peak height for coesite and underestimate the increase at high energies.</jats:p