The Fermi level effect in III-V intermixing: The final nail in the coffin?

Copyright 1997 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. This article appeared in Journal of Applied Physics 81, 2179 (1997) and may be found at

Interdiffusion: A probe of vacancy diffusion in III-V materials

Copyright 1997 by the American Physical Society. Article is available at

Clustering of vacancy defects in high-purity semi-insulating SiC

Positron lifetime spectroscopy was used to study native vacancy defects in semi-insulating silicon carbide. The material is shown to contain (i) vacancy clusters consisting of 4--5 missing atoms and (ii) Si vacancy related negatively charged defects. The total open volume bound to the clusters anticorrelates with the electrical resistivity both in as-grown and annealed material. Our results suggest that Si vacancy related complexes compensate electrically the as-grown material, but migrate to increase the size of the clusters during annealing, leading to loss of resistivity.Comment: 8 pages, 5 figure

Positron lifetime measurements on neutron‐irradiated InP crystals

Neutron‐irradiated InP single crystals have been investigated by positron‐lifetime measurements. The samples were irradiated with thermal neutrons at different fluences yielding concentrations for Sn‐transmuted atoms between 2×1015 and 2×1018 cm−3. The lifetime spectra have been analyzed into one exponential decay component. The mean lifetimes show a monotonous increase with the irradiation dose from 246 to 282 ps. The increase in the lifetime has been associated to a defect containing an Indium vacancy. Thermal annealing at 550 °C reduces the lifetime until values closed to those obtained for the as‐grown and conventionally doped InP [email protected] ; [email protected]

Tin-vacancy acceptor levels in electron-irradiated n-type silicon

Si crystals (n-type, fz) with doping levels between 1.5×1014 and 2×1016 cm-3 containing in addition ∼1018 Sn/cm3 were irradiated with 2-MeV electrons to different doses and subsequently studied by deep level transient spectroscopy, Mössbauer spectroscopy, and positron annihilation. Two tin-vacancy (Sn-V) levels at Ec-0.214 eV and Ec-0.501 eV have been identified (Ec denotes the conduction band edge). Based on investigations of the temperature dependence of the electron-capture cross sections, the electric-field dependence of the electron emissivity, the anneal temperature, and the defect-introduction rate, it is concluded that these levels are the double and single acceptor levels, respectively, of the Sn-V pair. These conclusions are in agreement with electronic structure calculations carried out using a local spin-density functional theory, incorporating pseudopotentials to eliminate the core electrons, and applied to large H-terminated clusters. Thus, the Sn-V pair in Si has five different charge states corresponding to four levels in the band gap.</p

The lives and deaths of positrons in the interstellar medium

We reexamine in detail the various processes undergone by positrons in the ISM from their birth to their annihilation using the most recent results of positron interaction cross sections with H, H2 and He. The positrons' lives are divided into two phases: the 'in-flight' phase and the thermal phase. The first phase is treated with a Monte Carlo simulation that allows us to determine the fraction of positrons that form positronium and annihilate as well as the characteristics of the annihilation emission as a function of the medium conditions. The second phase is treated with a binary reaction rate approach, with cross sections adopted from experimental measurement or theoretical calculations. An extensive search and update of the knowledge of positron processes was thus undertaken. New reaction rates and line widths have been obtained. We investigate the treatment of the complicated interactions between positrons and interstellar dust grains. New reaction rates and widths of the line resulting from the annihilation inside and outside of the grain have been obtained. The final results of our calculations showed that dust is only important in the hot phase of the ISM, where it dominates all other processes. Combining the new calculations, we have constructed annihilation spectra for each phase of the ISM, considering various grain contents, as well as an overall combined spectrum for the ISM as a whole.Comment: 16 pages, 6 figures. accepted in Astronomy and Astrophysic