Optimization of charge carrier extraction in colloidal quantum dots short-wave infrared photodiodes through optical engineering

Colloidal quantum dots (QDs) have attracted scientific interest for infrared (IR) optoelectronic devices due to their bandgap tunability and the ease of fabrication on arbitrary substrates. In this work, short-wave IR photodetectors based on lead sulfide (PbS) QDs with high detectivity and low dark current is demonstrated. Using a combination of time-resolved photoluminescence, carrier transport, and capacitance-voltage measurements, it is proved that the charge carrier diffusion length in the QD layer is negligible such that only photogenerated charges in the space charge region can be collected. To maximize the carrier extraction, an optical model for PbS QD-based photodiodes is developed, and through optical engineering, the cavity at the wavelength of choice is optimized. This universal optimization recipe is applied to detectors sensitive to wavelengths above 1.4 mu m, leading to external quantum efficiency of 30% and specific detectivity (D*) in the range of 10(12) Jones

Energy Level Tuning of Non-fullerene Acceptors in Organic Solar Cells

This document is the unedited author's version of a Submitted Work that was subsequently accepted for publication in Journal of the American Chemical Society , copyright © American Chemical Society after peer review. To access the final edited and published work, see http://pubs.acs.org/doi/abs/10.1021/jacs.5b02808The use of non-fullerene acceptors in organic photovoltaic devices could lead to enhanced efficiencies due to increased open-circuit voltages (VOC) and improved absorption of solar light. Here we systematically investigate planar heterojunction devices comprising peripherally substituted subphthalocyanines as acceptor, and correlate device performance with heterojunction energetics. Due to a balance between VOC and photocurrent, tuning of the interface energy gap is necessary to optimize power conversion efficiency in these devices. In addition, we explore the role of the charge transport layers in the device architecture. It is found that non-fullerene acceptors require adjusted buffer layers with aligned electron transport levels to enable efficient charge extraction, while the insertion of an exciton blocking layer at the anode interface further boosts photocurrent generation. These adjustments result in a planar heterojunction OPV device with 6.9% efficiency and a VOC above 1 V.The research leading to these results has received funding from the European Community’s Seventh Framework Programme (FP7/2007-2013) under grant agreement 287818 of the X10D project and from the European Community’s ERC Advanced Grant # 320680 (EPOS CRYSTALLI). This work is also supported by the Spanish MINECO (CTQ-2014-52869-P) and Comunidad de Madrid (S2013/MIT-2841, FOTOCARBON

Thin-film quantum dot photodiode for monolithic infrared image sensors

Imaging in the infrared wavelength range has been fundamental in scientific, military and surveillance applications. Currently, it is a crucial enabler of new industries such as autonomous mobility (for obstacle detection), augmented reality (for eye tracking) and biometrics. Ubiquitous deployment of infrared cameras (on a scale similar to visible cameras) is however prevented by high manufacturing cost and low resolution related to the need of using image sensors based on flip-chip hybridization. One way to enable monolithic integration is by replacing expensive, small-scale III-V-based detector chips with narrow bandgap thin-films compatible with 8- and 12-inch full-wafer processing. This work describes a CMOS-compatible pixel stack based on lead sulfide quantum dots (PbS QD) with tunable absorption peak. Photodiode with a 150-nm thick absorber in an inverted architecture shows dark current of 10(-6) A/cm(2) at 2 V reverse bias and EQE above 20% at 1440 nm wavelength. Optical modeling for top illumination architecture can improve the contact transparency to 70%. Additional cooling (193 K) can improve the sensitivity to 60 dB. This stack can be integrated on a CMOS ROIC, enabling order-of-magnitude cost reduction for infrared sensors

Integrated Sensors to Experimentally Measure Microheater Uniformity: Geometry Implications in Meander-Based Structures

This work was supported by the Research Foundation Flanders (FWO Vlaanderen) for funding in the research project under Grant G087422N

Near-field interactions between metal nanoparticle surface plasmons and molecular excitons in thin-films: part I: absorption

In this and the following paper (parts I and II, respectively), we systematically study the interactions between surface plasmons of metal nanoparticles (NPs) with excitons in thin-films of organic media. In an effort to exclusively probe near-field interactions, we utilize spherical Ag NPs in a size-regime where far-field light scattering is negligibly small compared to absorption. In part I, we discuss the effect of the presence of these Ag NPs on the absorption of the embedding medium by means of experiment, numerical simulations, and analytical calculations, all shown to be in good agreement. We observe absorption enhancement in the embedding medium due to the Ag NPs with a strong dependence on the medium permittivity, the spectral position relative to the surface plasmon resonance frequency, and the thickness of the organic layer. By introducing a low index spacer layer between the NPs and the organic medium, this absorption enhancement is experimentally confirmed to be a near field effect In part II, we probe the impact of the Ag NPs on the emission of organic molecules by time-resolved and steady-state photoluminescence measurements

FABRICATION AND CHARACTERIZATION OF LARGE-AREA FLEXIBLE CAPACITIVE MICROMACHINED ULTRASOUND TRANSDUCERS

This work was funded by an SB PhD fellowship of the Research Foundation-Flanders [FWO, 1S27524N]. The authors would like to thank Tsung-Chieh Sun for his assistance in cleanroom processing, Clement Leruth for scanning electron microscopy (SEM), and Francois Berghmans for running the automatic prober

A silicon photonics waveguide-coupled colloidal quantum dot photodiode sensitive beyond 1.6 um

Silicon photonics faces a persistent challenge in extending photodetection capabilities beyond the 1.6 um wavelength range, primarily due to the lack of appropriate epitaxial materials. Colloidal quantum dots (QDs) present a promising solution here, offering distinct advantages such as infrared wavelength tunability, cost-effectiveness, and facile deposition. Their unique properties position them as a potential candidate for enabling photodetection in silicon photonics beyond the conventional telecom wavelength, thereby expanding the potential applications and capabilities within this domain. In this study, we have successfully integrated lead sulfide (PbS) colloidal quantum dot photodiodes (QDPDs) onto silicon waveguides using standard process techniques. The integrated photodiodes exhibit a remarkable responsivity of 1.3 A/W (with an external quantum efficiency of 74.8%) at a wavelength of 2.1 um, a low dark current of only 106 nA and a bandwidth of 1.1 MHz under a -3 V bias. To demonstrate the scalability of our integration approach, we have developed a compact 8-channel spectrometer incorporating an array of QDPDs. This achievement marks a significant step toward realizing a cost-effective photodetector solution for silicon photonics, particularly tailored for a wide range of sensing applications around the 2 um wavelength range