4,829 research outputs found

    America's Hispanic Children: Gaining Ground, Looking Forward

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    The purpose of the study was to "widen the lens" by highlighting the positive trends among Hispanic youth. More young Latino children are enrolling in center-based care programs which are more likely to be of a higher educational quality than home-based care and other alternatives. Other highlights include Latino students posting solid gains on national assessments in key subject areas, more Latinos than ever before earning a high school diploma, and a record number of Hispanics enrolling in two- or four-year colleges. A greater sense of responsibility among Latino youth was also revealed in the study, indicated by falling teen pregnancy rates -- declines have been greater in the last four years for Latinas than other ethnic groups -- and a decrease in smoking and binge drinking habits among high school seniors. Latino teens' use of technology is also promising. While less likely to own a cell phone than their peers, they are avid users of smartphones and tablets. The Pew Research Center Hispanic Trends Project reported Hispanics are the only group to see poverty rates decline and incomes increase, but despite these gains, Hispanics have the largest number of people living in poverty when compared with other minority groups. "Nearly one-third of Latino children live below the poverty line, and a roughly equal share, while not poor by official definition, has family incomes just adequate to meet basic needs," the Child Trends study states

    Role of Strain on Electronic and Mechanical Response of Semiconducting Transition-Metal Dichalcogenide Monolayers: an ab-initio study

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    We characterize the electronic structure and elasticity of monolayer transition-metal dichalcogenides MX2 (M=Mo, W, Sn, Hf and X=S, Se, Te) with 2H and 1T structures using fully relativistic first principles calculations based on density functional theory. We focus on the role of strain on the band structure and band alignment across the series 2D materials. We find that strain has a significant effect on the band gap; a biaxial strain of 1% decreases the band gap in the 2H structures, by as a much 0.2 eV in MoS2 and WS2, while increasing it for the 1T materials. These results indicate that strain is a powerful avenue to modulate their properties; for example, strain enables the formation of, otherwise impossible, broken gap heterostructures within the 2H class. These calculations provide insight and quantitative information for the rational development of heterostructures based on these class of materials accounting for the effect of strain.Comment: 16 pages, 4 figures, 1 table, supplementary materia

    Embeddings between grand, small and variable Lebesgue spaces

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    We give conditions on the exponent function p()p(\cdot) that imply the existence of embeddings between grand, small and variable Lebesgue spaces. We construct examples to show that our results are close to optimal. Our work extends recent results by the second author, Rakotoson and Sbordone.Comment: Final version to appear in Math. Note

    Weighted norm inequalities for the bilinear maximal operator on variable Lebesgue spaces

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    We extend the theory of weighted norm inequalities on variable Lebesgue spaces to the case of bilinear operators. We introduce a bilinear version of the variable \A_\pp condition, and show that it is necessary and sufficient for the bilinear maximal operator to satisfy a weighted norm inequality. Our work generalizes the linear results of the first author, Fiorenza and Neugebauer \cite{dcu-f-nPreprint2010} in the variable Lebesgue spaces and the bilinear results of Lerner {\em et al.} \cite{MR2483720} in the classical Lebesgue spaces. As an application we prove weighted norm inequalities for bilinear singular integral operators in the variable Lebesgue spaces.Comment: Revised based on anonymous referee's reports. A number of typos and small errors corrected. One conjecture added to introductio

    The dynamics of copper intercalated molybdenum ditelluride

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    Layered transition metal dichalcogenides are emerging as key materials in nanoelectronics and energy applications. Predictive models to understand their growth, thermomechanical properties and interactions with metals are needed in order to accelerate their incorporation into commercial products. Interatomic potentials enable large-scale atomistic simulations at the device level, beyond the range of applications of first principle methods. We present a ReaxFF reactive force field to describe molybdenum ditelluride and its interactions with copper. We optimized the force field parameters to describe the properties of layered MoTe2 in various phases, the intercalation of Cu atoms and clusters within its van der Waals gap, including a proper description of energetics, charges and mechanical properties. The training set consists of an extensive set of first principle calculations computed from density functional theory. We use the force field to study the adhesion of a single layer MoTe2 on a Cu(111) surface and the results are in good agreement with density functional theory, even though such structures were not part of the training set. We characterized the mobility of the Cu ions intercalated into MoTe2 under the presence of an external electric fields via molecular dynamics simulations. The results show a significant increase in drift velocity for electric fields of approximately 0.4 V/A and that mobility increases with Cu ion concentration.Comment: 21 pages, 9 Figure

    Stability and Migration of Small Copper Clusters in Amorphous Dielectrics

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    We use density functional theory (DFT) to study the thermodynamic stability and migration of copper ions and small clusters embedded in amorphous silicon dioxide. We perform the calculations over an ensemble of statistically independent structures to quantify the role of the intrinsic atomic-level variability in the amorphous matrix affect the properties. The predicted formation energy of a Cu ion in the silica matrix is 2.7+/-2.4 eV, significantly lower the value for crystalline SiO2. Interestingly, we find that Cu clusters of any size are energetically favorable as compared to isolated ions; showing that the formation of metallic clusters does not require overcoming a nucleation barrier as is often assumed. We also find a broad distribution of activation energies for Cu migration, from 0.4 to 1.1 eV. This study provides insights into the stability of nanoscale metallic clusters in silica of interest in electrochemical metallization cell memories and optoelectronics.Comment: 23 pages, 7 figures, 1 tabl
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