Low temperature characterization of modulation doped SiGe grown on bonded silicon-on-insulator

Modulation doped pseudomorphic Si0.87Ge0.13 strained quantum wells were grown on bonded silicon-on-insulator (SOI) substrates. Comparison with similar structures grown on bulk Si(100) wafers shows that the SOI material has higher mobility at low temperatures with a maximum value of 16 810 cm 2/V s for 2.05 × 1011 cm – 2 carries at 298 mK. Effective masses obtained from the temperature dependence of Shubnikov–de Haas oscillations have a value of (0.27 ± 0.02) m0 compared to (0.23 ± 0.02) m0 for quantum wells on Si(100) while the cyclotron resonance effective masses obtained at higher magnetic fields without consideration for nonparabolicity effects have values between 0.25 and 0.29 m0. Ratios of the transport and quantum lifetimes, tau/tau q=2.13 ± 0.10, were obtained for the SOI material that are, we believe, the highest reported for any pseudomorphic SiGe modulation doped structure and demonstrates that there is less interface roughness or charge scattering in the SOI material than in metal–oxide–semiconductor field effect transistors or other pseudomorphic SiGe modulation doped quantum wells

A study on the thermal conductivity of compacted bentonites

Thermal conductivity of compacted bentonite is one of the most important properties in the design of high-level radioactive waste repositories where this material is proposed for use as a buffer. In the work described here, a thermal probe based on the hot wire method was used to measure the thermal conductivity of compacted bentonite specimens. The experimental results were analyzed to observe the effects of various factors (i.e. dry density, water content, hysteresis, degree of saturation and volumetric fraction of soil constituents) on the thermal conductivity. A linear correlation was proposed to predict the thermal conductivity of compacted bentonite based on experimentally observed relationship between the volumetric fraction of air and the thermal conductivity. The relevance of this correlation was finally analyzed together with others existing methods using experimental data on several compacted bentonites

Rapid fabrication of annuloplasty rings by electron beam melting

Electron Beam Melting (EBM) is an Additive Manufacturing (AM) technology capable of producing intricate parts by melting powder metal with the aid of an electron beam gun. EBM has facilitated the production of standard and customisable implants. Customizable implants such as orthopaedic implants, cranial implants and dental implants have already been developed and implanted successfully after being fabricated by AM technology. Other medical devices can also benefit from the possibilities offered by AM. An example of such a medical device would be the annuloplasty ring. Standard annuloplasty rings are implanted whenever a patient is diagnosed with mitral valve regurgitation. This problem arises when the mitral valve does not close properly, causing back leakage through the closed valve resulting in blood flowing to the atrium instead of the aorta during systole. The latest designs of annuloplasty rings allow restoration of the mitral annulus configuration to a saddle-shaped shape.peer-reviewe

TwiddleNet: Smartphones as Personal Servers

TwiddleNet uses smartphones as personal servers to enable instant content capture and dissemination for firstresponders. It supports the information sharing needs of first responders in the early stages of an emergency response operation. In TwiddleNet, content, once captured, is automatically tagged and disseminated using one of the several networking channels available in smartphones. TwiddleNet pays special attention to minimizing the equipment, network set-up time, and content capture and dissemination effort. It can support small operations of emergency responders in the first 48-72 hours of an emergency response by using handheld devices based infrastructure and scale up to handle hundred of users with more robust backend infrastructure

Silver antimony Ohmic contacts to moderately doped n-type germanium

A self doping contact consisting of a silver/antimony alloy that produces an Ohmic contact to moderately doped n-type germanium (doped to a factor of four above the metal-insulator transition) has been investigated. An evaporation of a mixed alloy of Ag/Sb (99%/1%) onto n-Ge ( ND=1×1018 cm−3) annealed at 400 °C produces an Ohmic contact with a measured specific contact resistivity of (1.1±0.2)×10−5 Ω-cm2. It is proposed that the Ohmic behaviour arises from an increased doping concentration at the Ge surface due to the preferential evaporation of Sb confirmed by transmission electron microscope analysis. It is suggested that the doping concentration has increased to a level where field emission will be the dominate conduction mechanism. This was deduced from the low temperature electrical characterisation of the contact, which exhibits Ohmic behaviour down to a temperature of 6.5 K

A direct path to dependable software

What would it take to make software more dependable? Until now, most approaches have been indirect: some practices – processes, tools or techniques – are used that are believed to yield dependable software, and the argument for dependability rests on the extent to which the developers have adhered to them. This article argues instead that developers should produce direct evidence that the software satisfies its dependability claims. The potential advantages of this approach are greater credibility (since the argument is not contingent on the effectiveness of the practices) and reduced cost (since development resources can be focused where they have the most impact)

Realization of the farad from the dc quantum Hall effect with digitally-assisted impedance bridges

A new traceability chain for the derivation of the farad from dc quantum Hall effect has been implemented at INRIM. Main components of the chain are two new coaxial transformer bridges: a resistance ratio bridge, and a quadrature bridge, both operating at 1541 Hz. The bridges are energized and controlled with a polyphase direct-digital-synthesizer, which permits to achieve both main and auxiliary equilibria in an automated way; the bridges and do not include any variable inductive divider or variable impedance box. The relative uncertainty in the realization of the farad, at the level of 1000 pF, is estimated to be 64E-9. A first verification of the realization is given by a comparison with the maintained national capacitance standard, where an agreement between measurements within their relative combined uncertainty of 420E-9 is obtained.Comment: 15 pages, 11 figures, 3 table

Uneven splitting-ratio 1x2 multimode interference splitters based on silicon wire waveguides

Two types of 1x2 multi-mode interference (MMI) splitters with splitting ratios of 85:15 and 72:28 are designed. On the basis of a numerical simulation, an optimal length of the MMI section is obtained. Subsequently, the devices are fabricated and tested. The footprints of the rectangular MMI regions are only 3x18.2 and 3x14.3 (mu m). The minimum excess losses are 1.4 and 1.1 dB. The results of the test on the splitting ratios are consistent with designed values. The devices can be applied in ultra-compact photonic integrated circuits to realize the "tap" function