8,822 research outputs found
Multi-Entity Dependence Learning with Rich Context via Conditional Variational Auto-encoder
Multi-Entity Dependence Learning (MEDL) explores conditional correlations
among multiple entities. The availability of rich contextual information
requires a nimble learning scheme that tightly integrates with deep neural
networks and has the ability to capture correlation structures among
exponentially many outcomes. We propose MEDL_CVAE, which encodes a conditional
multivariate distribution as a generating process. As a result, the variational
lower bound of the joint likelihood can be optimized via a conditional
variational auto-encoder and trained end-to-end on GPUs. Our MEDL_CVAE was
motivated by two real-world applications in computational sustainability: one
studies the spatial correlation among multiple bird species using the eBird
data and the other models multi-dimensional landscape composition and human
footprint in the Amazon rainforest with satellite images. We show that
MEDL_CVAE captures rich dependency structures, scales better than previous
methods, and further improves on the joint likelihood taking advantage of very
large datasets that are beyond the capacity of previous methods.Comment: The first two authors contribute equall
Electronic structure of the Au/benzene-1,4-dithiol/Au transport interface: Effects of chemical bonding
We present results of electronic structure calculations for well-relaxed
Au/benzene-1,4-dithiol/Au molecular contacts, based on density functional
theory and the generalized gradient approximation. Electronic states in the
vicinity of the Fermi energy are mainly of Au 5d and S 3p symmetry, whereas
contributions of C 2p states are very small. Hybridization between C 2p
orbitals within the benzene substructure is strongly suppressed due to S-C
bonding. In agreement with experimental findings, this corresponds to a
significantly reduced conductance of the molecular contact.Comment: 7 pages, 5 figures, accepted by Chemical Physics Letter
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III/V-on-Si MQW lasers by using a novel photonic integration method of regrowth on a bonding template.
Silicon photonics is becoming a mainstream data-transmission solution for next-generation data centers, high-performance computers, and many emerging applications. The inefficiency of light emission in silicon still requires the integration of a III/V laser chip or optical gain materials onto a silicon substrate. A number of integration approaches, including flip-chip bonding, molecule or polymer wafer bonding, and monolithic III/V epitaxy, have been extensively explored in the past decade. Here, we demonstrate a novel photonic integration method of epitaxial regrowth of III/V on a III/V-on-SOI bonding template to realize heterogeneous lasers on silicon. This method decouples the correlated root causes, i.e., lattice, thermal, and domain mismatches, which are all responsible for a large number of detrimental dislocations in the heteroepitaxy process. The grown multi-quantum well vertical p-i-n diode laser structure shows a significantly low dislocation density of 9.5 × 104 cm-2, two orders of magnitude lower than the state-of-the-art conventional monolithic growth on Si. This low dislocation density would eliminate defect-induced laser lifetime concerns for practical applications. The fabricated lasers show room-temperature pulsed and continuous-wave lasing at 1.31 μm, with a minimal threshold current density of 813 A/cm2. This generic concept can be applied to other material systems to provide higher integration density, more functionalities and lower total cost for photonics as well as microelectronics, MEMS, and many other applications
Charge-Density-Wave induced modifications to the quasiparticle self-energy in 2H TaSe2
The self-energy of the photo-hole in 2H-TaSe2 is measured by angle-resolved
photoemission spectroscopy (ARPES) as a function of binding energy and
temperature. In the charge-density wave (CDW) state, a structure in the self-
energy is detected at ~ 65 meV that can not be explained by electron-phonon
scattering. A reduction in the scattering rates below this energy indicates the
collapse of a major scattering channel with the formation of the CDW state,
accompanying the appearance of a bosonic "mode" in the excitation spectrum of
the system.Comment: 4 pages, 4 eps figures, minor changes, references adde
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