An algorithm for calculating the Lorentz angle in silicon detectors

Future experiments will use silicon sensors in the harsh radiation environment of the LHC (Large Hadron Collider) and high magnetic fields. The drift direction of the charge carriers is affected by the Lorentz force due to the high magnetic field. Also the resulting radiation damage changes the properties of the drift. In this paper measurements of the Lorentz angle of electrons and holes before and after irradiation are reviewed and compared with a simple algorithm to compute the Lorentz angle.Comment: 13 pages, 7 figures, final version accepted by NIMA. Mainly clarifications included and slightly shortene

Lorentz angle measurements in irradiated silicon detectors between 77 K and 300 K

Future experiments are using silicon detectors in a high radiation environment and in high magnetic fields. The radiation tolerance of silicon improves by cooling it to temperatures below 180 K. At low temperatures the mobility increases, which leads to larger deflections of the charge carriers by the Lorentz force. A good knowledge of the Lorentz angle is needed for design and operation of silicon detectors. We present measurements of the Lorentz angle between 77 K and 300 K before and after irradiation with a primary beam of 21 MeV protons.Comment: 13 pages, 9 figures, submitted to ICHEP2000, Osaka, Japa

Geant4 Simulation of a filtered X-ray Source for Radiation Damage Studies

Geant4 low energy extensions have been used to simulate the X-ray spectra of industrial X-ray tubes with filters for removing the uncertain low energy part of the spectrum in a controlled way. The results are compared with precisely measured X-ray spectra using a silicon drift detector. Furthermore, this paper shows how the different dose rates in silicon and silicon dioxide layers of an electronic device can be deduced from the simulations

Signal and noise of Diamond Pixel Detectors at High Radiation Fluences

CVD diamond is an attractive material option for LHC vertex detectors because of its strong radiation-hardness causal to its large band gap and strong lattice. In particular, pixel detectors operating close to the interaction point profit from tiny leakage currents and small pixel capacitances of diamond resulting in low noise figures when compared to silicon. On the other hand, the charge signal from traversing high energy particles is smaller in diamond than in silicon by a factor of about 2.2. Therefore, a quantitative determination of the signal-to-noise ratio (S/N) of diamond in comparison with silicon at fluences in excess of 10$^{15}$ n$_{eq}$ cm$^{-2}$, which are expected for the LHC upgrade, is important. Based on measurements of irradiated diamond sensors and the FE-I4 pixel readout chip design, we determine the signal and the noise of diamond pixel detectors irradiated with high particle fluences. To characterize the effect of the radiation damage on the materials and the signal decrease, the change of the mean free path $\lambda_{e/h}$ of the charge carriers is determined as a function of irradiation fluence. We make use of the FE-I4 pixel chip developed for ATLAS upgrades to realistically estimate the expected noise figures: the expected leakage current at a given fluence is taken from calibrated calculations and the pixel capacitance is measured using a purposely developed chip (PixCap). We compare the resulting S/N figures with those for planar silicon pixel detectors using published charge loss measurements and the same extrapolation methods as for diamond. It is shown that the expected S/N of a diamond pixel detector with pixel pitches typical for LHC, exceeds that of planar silicon pixels at fluences beyond 10$^{15}$ particles cm$^{-2}$, the exact value only depending on the maximum operation voltage assumed for irradiated silicon pixel detectors

The performance of irradiated CMS silicon mirco-strip detector modules

The central tracking system of the Compact Muon Solenoid (CMS) experiment will be entirely buil in silicon technology. The majority of the CMS tracker consists of silicon micro-strip detectors which have to be operated in the harsh environment of the Large Hadron Collider (LHC) over a period of ten years. The expected equivalent fluences range from a low of 0.7 x 10^14 n_1MeV/cm^2 at the outermost layers of the tracker, to a high of 1.6 x 10^14 n_1MeV/cm^2 at the layers closest to the interaction region. In this paper, results from studies of irradiatied CMS silicon detector modules are presented

Investigation of the kinetic regularities of the reaction of dry reforming of methane using nickel-containing catalysts based on cerium-zirconium oxides

In this study, we performed an investigation of the kinetics of the reaction of dry reforming of methane (DRM). For this work we used nickel-containing cerium-zirconium oxides. The catalysts were prepared in supercritical iso-propanol and characterized by means of XRD, TEM, XPS. It was found that the rate of DRM reaction becomes first order in methane and zero order in carbon dioxide. The dependences of the conversions of the reactants and product yields were obtained as a function of the contact time and the concentration of the initial mixture. In addition, the effective activation energy was calculated. It was shown that the most active and stable catalyst is 5wt% Ni/Ce0.5Zr0.5O[2]

Belle II Technical Design Report

The Belle detector at the KEKB electron-positron collider has collected almost 1 billion Y(4S) events in its decade of operation. Super-KEKB, an upgrade of KEKB is under construction, to increase the luminosity by two orders of magnitude during a three-year shutdown, with an ultimate goal of 8E35 /cm^2 /s luminosity. To exploit the increased luminosity, an upgrade of the Belle detector has been proposed. A new international collaboration Belle-II, is being formed. The Technical Design Report presents physics motivation, basic methods of the accelerator upgrade, as well as key improvements of the detector.Comment: Edited by: Z. Dole\v{z}al and S. Un