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A survey of carbon nanotube interconnects for energy efficient integrated circuits
This article is a review of the state-of-art carbon nanotube interconnects for Silicon application with respect to the recent literature. Amongst all the research on carbon nanotube interconnects, those discussed here cover 1) challenges with current copper interconnects, 2) process & growth of carbon nanotube interconnects compatible with back-end-of-line integration, and 3) modeling and simulation for circuit-level benchmarking and performance prediction. The focus is on the evolution of carbon nanotube interconnects from the process, theoretical modeling, and experimental characterization to on-chip interconnect applications. We provide an overview of the current advancements on carbon nanotube interconnects and also regarding the prospects for designing energy efficient integrated circuits. Each selected category is presented in an accessible manner aiming to serve as a survey and informative cornerstone on carbon nanotube interconnects relevant to students and scientists belonging to a range of fields from physics, processing to circuit design
Lifetime measurements in Co and Co
Lifetimes of the and states in Co and the
state in Co were measured using the recoil distance Doppler
shift and the differential decay curve methods. The nuclei were populated by
multi-nucleon transfer reactions in inverse kinematics. Gamma rays were
measured with the EXOGAM Ge array and the recoiling fragments were fully
identified using the large-acceptance VAMOS spectrometer. The E2 transition
probabilities from the and states to the ground
state could be extracted in Co as well as an upper limit for the
(E2) value in Co. The experimental
results were compared to large-scale shell-model calculations in the and
model spaces, allowing to draw conclusions on the single-particle
or collective nature of the various states.Comment: 8 pages, 8 figures, 1 table, accepted for publication in Physical
Review
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