Phase composition and transformations in magnetron-sputtered (Al,V)2O3 coatings

Coatings of (Al1-xVx)2O3, with x ranging from 0 to 1, were deposited by pulsed DC reactive sputter deposition on Si(100) at a temperature of 550 {\deg}C. XRD showed three different crystal structures depending on V-metal fraction in the coating: {\alpha}-V2O3 rhombohedral structure for 100 at.% V, a defect spinel structure for the intermediate region, 63 - 42 at.% V. At lower V-content, 18 and 7 at.%, a gamma-alumina-like solid solution was observed, shifted to larger d-spacing compared to pure {\gamma}-Al2O3. The microstructure changes from large columnar faceted grains for {\alpha}-V2O3 to smaller equiaxed grains when lowering the vanadium content toward pure {\gamma}-Al2O3. Annealing in air resulted in formation of V2O5 crystals on the surface of the coating after annealing to 500 {\deg}C for 42 at.% V and 700 {\deg}C for 18 at.% V metal fraction respectively. The highest thermal stability was shown for pure {\gamma}-Al2O3-coating, which transformed to {\alpha}-Al2O3 after annealing to 1100{\deg} C. Highest hardness was observed for the Al-rich oxides, ~24 GPa. The latter decreased with increasing V-content, larger than 7 at.% V metal fraction. The measured hardness after annealing in air decreased in conjunction with the onset of further oxidation of the coatings

Reversible Fluorination of Graphene: towards a Two-Dimensional Wide Bandgap Semiconductor

We report the synthesis and evidence of graphene fluoride, a two-dimensional wide bandgap semiconductor derived from graphene. Graphene fluoride exhibits hexagonal crystalline order and strongly insulating behavior with resistance exceeding 10 G$\Omega$ at room temperature. Electron transport in graphene fluoride is well described by variable-range hopping in two dimensions due to the presence of localized states in the band gap. Graphene obtained through the reduction of graphene fluoride is highly conductive, exhibiting a resistivity of less than 100 k$\Omega$ at room temperature. Our approach provides a new path to reversibly engineer the band structure and conductivity of graphene for electronic and optical applications.Comment: 7 pages, 5 figures, revtex, to appear in PR

Renormalization Group Analysis of a Noisy Kuramoto-Sivashinsky Equation

We have analyzed the Kuramoto-Sivashinsky equation with a stochastic noise term through a dynamic renormalization group calculation. For a system in which the lattice spacing is smaller than the typical wavelength of the linear instability occurring in the system, the large-distance and long-time behavior of this equation is the same as for the Kardar-Parisi-Zhang equation in one and two spatial dimensions. For the $d=2$ case the agreement is only qualitative. On the other hand, when coarse-graining on larger scales the asymptotic flow depends on the initial values of the parameters.Comment: 8 pages, 5 figures, revte

Структура заболеваемости поллинозом в Витебской области

ГИПЕРСЕНСИБИЛИЗАЦИЯ НЕМЕДЛЕННОГО ТИПАПОЛЛИНОЗСЕННАЯ ЛИХОРАДК

Vibrational Study of 13C-enriched C60 Crystals

The infrared (IR) spectrum of solid C60 exhibits many weak vibrational modes. Symmetry breaking due to 13C isotopes provides a possible route for optically activating IR-silent vibrational modes. Experimental spectra and a semi-empirical theory on natural abundance and 13C-enriched single crystals of C60 are presented. By comparing the experimental results with the theoretical results, we exclude this isotopic activation mechanism from the explanation for weakly active fundamentals in the spectra.Comment: Accepted for Phys. Rev. B, typeset in REVTEX v3.0 in LaTeX. Postscript file including figures is available at http://insti.physics.sunysb.edu/~mmartin/papers/c13twocol2.ps File with figures will be e-mailed by reques

Dianion diagnostics in DESIREE: High-sensitivity detection of Cn2−\text{C}_{n}^{2-} from a sputter ion source

A sputter ion source with a solid graphite target has been used to produce dianions with a focus on carbon cluster dianions, $\text{C}_{n}^{2-}$, with $n=7-24$. Singly and doubly charged anions from the source were accelerated together to kinetic energies of 10 keV per atomic unit of charge and injected into one of the cryogenic (13 K) ion-beam storage rings of the Double ElectroStatic Ion Ring Experiment facility at Stockholm University. Spontaneous decay of internally hot $\text{C}_{n}^{2-}$ dianions injected into the ring yielded $\text{C}^{-}$ anions with kinetic energies of 20 keV, which were counted with a microchannel plate detector. Mass spectra produced by scanning the magnetic field of a $90^{\circ}$ analyzing magnet on the ion injection line reflect the production of internally hot $\text{C}_{7}^{2-}-\text{C}_{24}^{2-}$ dianions with lifetimes in the range of tens of microseconds to milliseconds. In spite of the high sensitivity of this method, no conclusive evidence of $\text{C}_{6}^{2-}$ was found while there was a clear $\text{C}_{7}^{2-}$ signal with the expect isotopic distribution. An upper limit is deduced for a $\text{C}_{6}^{2-}$ signal that is two orders-of-magnitue smaller than that for $\text{C}_{7}^{2-}$. In addition, $\text{C}_{n}\text{O}^{2-}$ and $\text{CsCu}^{2-}$ dianions were detected.Comment: 6 pages, 6 figure

Precision scans of the pixel cell response of double sided 3D pixel detectors to pion and x-ray beams

hree-dimensional (3D) silicon sensors offer potential advantages over standard planar sensors for radiation hardness in future high energy physics experiments and reduced charge-sharing for X-ray applications, but may introduce inefficiencies due to the columnar electrodes. These inefficiencies are probed by studying variations in response across a unit pixel cell in a 55μm pitch double-sided 3D pixel sensor bump bonded to TimePix and Medipix2 readout ASICs. Two complementary characterisation techniques are discussed: the first uses a custom built telescope and a 120GeV pion beam from the Super Proton Synchrotron (SPS) at CERN; the second employs a novel technique to illuminate the sensor with a micro-focused synchrotron X-ray beam at the Diamond Light Source, UK. For a pion beam incident perpendicular to the sensor plane an overall pixel efficiency of 93.0±0.5% is measured. After a 10o rotation of the device the effect of the columnar region becomes negligible and the overall efficiency rises to 99.8±0.5%. The double-sided 3D sensor shows significantly reduced charge sharing to neighbouring pixels compared to the planar device. The charge sharing results obtained from the X-ray beam study of the 3D sensor are shown to agree with a simple simulation in which charge diffusion is neglected. The devices tested are found to be compatible with having a region in which no charge is collected centred on the electrode columns and of radius 7.6±0.6μm. Charge collection above and below the columnar electrodes in the double-sided 3D sensor is observed

Dynamic Scaling of Ion-Sputtered Surfaces

We derive a stochastic nonlinear equation to describe the evolution and scaling properties of surfaces eroded by ion bombardment. The coefficients appearing in the equation can be calculated explicitly in terms of the physical parameters characterizing the sputtering process. We find that transitions may take place between various scaling behaviors when experimental parameters such as the angle of incidence of the incoming ions or their average penetration depth, are varied.Comment: 13 pages, Revtex, 2 figure