Biosensor measurement of purine release from cerebellar cultures and slices

We have previously described an action-potential and Ca2+-dependent form of adenosine release in the molecular layer of cerebellar slices. The most likely source of the adenosine is the parallel fibres, the axons of granule cells. Using microelectrode biosensors, we have therefore investigated whether cultured granule cells (from postnatal day 7–8 rats) can release adenosine. Although no purine release could be detected in response to focal electrical stimulation, purine (adenosine, inosine or hypoxanthine) release occurred in response to an increase in extracellular K+ concentration from 3 to 25 mM coupled with addition of 1 mM glutamate. The mechanism of purine release was transport from the cytoplasm via an ENT transporter. This process did not require action-potential firing but was Ca2+dependent. The major purine released was not adenosine, but was either inosine or hypoxanthine. In order for inosine/hypoxanthine release to occur, cultures had to contain both granule cells and glial cells; neither cellular component was sufficient alone. Using the same stimulus in cerebellar slices (postnatal day 7–25), it was possible to release purines. The release however was not blocked by ENT blockers and there was a shift in the Ca2+ dependence during development. This data from cultures and slices further illustrates the complexities of purine release, which is dependent on cellular composition and developmental stage

Asymmetry in effective fields of spin-orbit torques in Pt/Co/Pt stacks

Measurements of switching via spin-orbit coupling (SOC) mechanisms are discussed for a pair of inverted Pt/Co/Pt stacks with asymmetrical Pt thicknesses. Taking into account the planar Hall effect contribution, effective fields of spin-orbit torques (SOT) are evaluated using lock-in measurements of the first and second harmonics of the Hall voltage. Reversing the stack structure leads to significant asymmetries in the switching behavior, including clear evidence of a nonlinear current dependence of the transverse effective field. Our results demonstrate potentially complex interplay in devices with all-metallic interfaces utilizing SOT

Laser-assisted transfer for rapid additive micro-fabrication of electronic devices

Laser-based micro-fabrication techniques can be divided into the two broad categories of subtractive and additive processing. Subtractive embraces the well-established areas of ablation, drilling, cutting and trimming, where the substrate material is post-processed into the desired final form or function. Additive describes a manufacturing process that most recently has captured the news in terms of 3-d printing, where materials and structures are assembled from scratch to form complex 3-d objects. While most additive 3-d printing methods are purely aimed at fabrication of structures, the ability to deposit material on the micron-scale enables the creation of functional, e.g. electronic or photonic, devices [1]. Laser-induced forward transfer (LIFT) is a method for the transfer of functional thin film materials with sub-micron to few millimetre feature sizes [2,3]. It has a unique advantage as the materials can be optimised beforehand in terms of their electrical, mechanical or optical properties. LIFT allows the intact transfer of solid, viscous or matrix-embedded films in an additive fashion. As a direct-write method, no lithography or post-processing is required and does not add complexity to existing laser machining systems, thus LIFT can be applied for the rapid and inexpensive fabrication or repair of electronic devices. While the technique is not limited to a specific range of materials, only a few examples show transfer of inorganic semiconductors. So far, LIFT demonstration of materials such as silicon [4,5] have undergone melting, and hence a phase transition process during the transfer which may not be desirable, compromising or reducing the efficiency of a resulting device. Here, we present our first results on the intact transfer of solid thermoelectric semiconductor materials on a millimetre scale via nanosecond excimer laser-based LIFT. We have studied the transfer and its effect on the phase and physical properties of the printed materials and present a working thermoelectric generator as an example of such a device. Furthermore, results from initial experiments to transfer silicon onto polymeric substrates in an intact state via a Ti:sapphire femtosecond laser are also shown, which illustrate the utility of LIFT for printing micron-scale semiconductor features in the context of flexible electronic applications

Optical control of electric-field poling in LiTaO₃

We present a room temperature technique for optically inducing periodic domain-inverted structures in bulk (0.2mm thick) LiTaO3. By simultaneous application of an electric field and patterned illumination using UV wavelengths (351nm and 364nm) we demonstrate modulation of the resulting domain profile. We discuss the origins of the observed optical effect and describe our results from repeated domain switching, by cycling the electric field

Direct writing of ferroelectric domains on the x- and y-faces of lithium niobate using a continuous wave ultraviolet laser

Ferroelectric domain reversal has been achieved by scanning a tightly focused, strongly absorbed ultraviolet laser beam across the x- and y-faces of lithium niobate crystals. The domains were investigated by piezoresponse force microscopy. The emergence and width of any domain was found to depend on the scanning direction of the irradiating laser beam with respect to the polar z-axis. Full width and half width domains or no domain formation at all could be achieved for scanning along specific directions. We interpret the results by a direct correlation between the local temperature gradient and the resulting polarization direction

Laser operation of a Tm:Y₂O₃ planar waveguide

We demonstrate the first Tm-doped yttria planar waveguide laser to our knowledge, grown by pulsed laser deposition. A maximum output power of 35 mW at 1.95 µm with 9% slope efficiency was achieved from a 12 µm-thick film grown on a Y3Al5O12 substrate