Method of evaluating moisture barrier properties of encapsulating materials Patent

Method of evaluating moisture barrier properties of materials used in electronics encapsulatio

Multi-gap superconductivity and Shubnikov-de Haas oscillations in single crystals of the layered boride OsB_2

Single crystals of superconducting OsB_2 [T_c = 2.10(5) K] have been grown using a Cu-B eutectic flux. We confirm that OsB_2 crystallizes in the reported orthorhombic structure (space group Pmmn) at room temperature. Both the normal and superconducting state properties of the crystals are studied using various techniques. Heat capacity versus temperature C(T) measurements yield the normal state electronic specific heat coefficient \gamma = 1.95(1) mJ/mol K^2 and the Debye temperature \Theta_D = 539(2) K. The measured frequencies of Shubnikov-de Haas oscillations are in good agreement with those predicted by band structure calculations. Magnetic susceptibility \chi(T,H), electrical resistivity \rho(T) and C(T,H) measurements (H is the magnetic field) demonstrate that OsB_2 is a bulk low-\kappa [\kappa(T_c) = 2(1)] Type-II superconductor that is intermediate between the clean and dirty limits [\xi(T=0)/\ell = 0.97)] with a small upper critical magnetic field H_c2(T = 0) = 186(4) Oe. The penetration depth is \lambda(T = 0) = 0.300 \mu m. An anomalous (not single-gap BCS) T dependence of \lambda was fitted by a two-gap model with \Delta_1(T = 0)/k_BT_c = 1.9 and \Delta_2(T = 0)/k_BT_c = 1.25, respectively. The discontinuity in the heat capacity at T_c, \Delta C/\gamma T_c = 1.32, is smaller than the weak-coupling BCS value of 1.43, consistent with the two-gap nature of the superconductivity in OsB_2. An anomalous increase in \Delta C at T_c of unknown origin is found in finite H; e.g., \Delta C/\gamma T_c \approx 2.5 for H \approx 25 Oe.Comment: 15 pages, 18 figures, 4 table

Композиционные силикатные краски с улучшенными технологическими сойствами

The composition of one-packing silicate paint on the basis of liquid glass modified by acrylic dispersion in number of 5%, including inactive filler in number of 15% in the form of talc and chalk, zinc oxide ranging from 5 to 9% as a hardener, and an active silica component which contents changes depending on its nature was developed. Liquid glass compositions with usage of aerosol and activated quartz sand was received. They improved characteristics and increased viability approximately to one year

Magnetic, Transport, and Thermal Properties of Single Crystals of the Layered Arsenide BaMn2As2

Growth of BaMn2As2 crystals using both MnAs and Sn fluxes is reported. Room temperature crystallography, anisotropic isothermal magnetization M versus field H and magnetic susceptibility chi versus temperature T, electrical resistivity in the ab plane rho(T), and heat capacity C(T) measurements on the crystals were carried out. The tetragonal ThCr2Si2-type structure of BaMn2As2 is confirmed. After correction for traces of ferromagnetic MnAs impurity phase using M(H) isotherms, the inferred intrinsic chi(T) data of the crystals are anisotropic with chi_{ab}/chi_{c} \approx 7.5 at T = 2 K. The temperature dependences of the anisotropic chi data suggest that BaMn2As2 is a collinear antiferromagnet at room temperature with the easy axis along the c axis, and with an extrapolated Neel temperature T_N \sim 500 K. The rho(T) decreases with decreasing T below 310 K but then increases below \sim 50 K, suggesting that BaMn2As2 is a small band-gap semiconductor with an activation energy of order 0.03 eV. The C(T) data from 2 to 5 K are consistent with this insulating ground state, exhibiting a low temperature Sommerfeld coefficient gamma = 0.0(4) mJ/mol K^2. The Debye temperature is determined from these data to be theta_D = 246(4) K. BaMn2As2 is a potential parent compound for ThCr2Si2-type superconductors.Comment: 7 pages, 6 figures; v2: typos corrected, additional data and discussion, accepted for publication in Phys. Rev.

Crystallography, magnetic susceptibility, heat capacity, and electrical resistivity of heavy fermion LiV2_2O4_4 single crystals grown using a self-flux technique

Magnetically pure spinel compound ${\rm LiV_2O_4}$ is a rare $d$-electron heavy fermion. Measurements on single crystals are needed to clarify the mechanism for the heavy fermion behavior in the pure material. In addition, it is known that small concentrations ($< 1$ mol%) of magnetic defects in the structure strongly affect the properties, and measurements on single crystals containing magnetic defects would help to understand the latter behaviors. Herein, we report flux growth of ${\rm LiV_2O_4}$ and preliminary measurements to help resolve these questions. The magnetic susceptibility of some as-grown crystals show a Curie-like upturn at low temperatures, showing the presence of magnetic defects within the spinel structure. The magnetic defects could be removed in some of the crystals by annealing them at 700 $^\circ$C\@. A very high specific heat coefficient $\gamma$ = 450 mJ/(mol K${^2}$\@) was obtained at a temperature of 1.8 K for a crystal containing a magnetic defect concentration $n$${\rm_{defect}}$ = 0.5 mol%. A crystal with $n$${\rm _{defect}}$ = 0.01 mol% showed a residual resistivity ratio of 50.Comment: 6 pages, 7 figures, Title modifie

Single crystal growth and physical properties of the layered arsenide BaRh_2As_2

Single crystals of BaRh_2As_2 have been synthesized from a Pb flux. We present the room temperature crystal structure, single crystal x-ray diffraction measurements as a function of temperature T, anisotropic magnetic susceptibility \chi versus T, electrical resistivity in the ab-plane \rho versus T, Hall coefficient versus T and magnetic field H, and heat capacity C versus T measurements on the crystals. The single crystal structure determination confirms that BaRh_2As_2 forms in the tetragonal ThCr_2Si_2 type structure (space group I4/mmm) with lattice parameters a = b = 4.0564(6)\AA and c = 12.797(4) \AA. Band structure calculations show that BaRh_2As_2 should be metallic with a small density of states at the Fermi energy N(E_ F) = 3.49 states/eV f.u. (where f.u. \equiv formula unit) for both spin directions. \rho(T) data in the ab-plane confirm that the material is indeed metallic with a residual resistivity \rho(2K) = 29 \mu \Omega cm, and with a residual resistivity ratio \rho(310K)/\rho(2K) = 5.3. The observed \chi(T) is small (\sim 10^{-5} cm^3/mol) and weakly anisotropic with \chi_{ab}/\chi_ c \approx 2. The C(T) data indicate a small density of states at the Fermi energy with the low temperature Sommerfeld coefficient \gamma = 4.7(9) mJ/mol K^2. There are no indications of superconductivity, spin density wave, or structural transitions between 2K and 300K. We compare the calculated density of states versus energy of BaRh_2As_2 with that of BaFe_2As_2.Comment: Accepted for publication in Phys. Rev.