The role of cranial CT in the investigation of meningitis

More patients with meningitis are undergoing CT and the number of inappropriate requests are increasing. There are few abnormal CT scans presenting a contraindication for lumbar puncture and the majority of these patients usually have clinical signs to suggest raised intracranial pressure

Preparation of SrRuO\u3csub\u3e3\u3c/sub\u3e films for advanced CMOS metal gates

\u3cp\u3eWe report on the growth and properties of SrRuO\u3csub\u3e3\u3c/sub\u3e films for application as metal gates for CMOS devices. The films were grown at 500°C by metal-organic chemical vapour deposition on Si substrates with thermal SiO\u3csub\u3e2\u3c/sub\u3e, atomic-layer deposited Al\u3csub\u3e2\u3c/sub\u3eO\u3csub\u3e3\u3c/sub\u3e and HfO \u3csub\u3e2\u3c/sub\u3e dielectric films. The films exhibit room temperature resistivity below 1 mΩ cm. We have analysed the interface between the SrRuO \u3csub\u3e3\u3c/sub\u3e metal gate and the oxide film by Rutherford backscattering and secondary ion mass spectroscopy. Annealing in an oxygen atmosphere and forming gas (90% N\u3csub\u3e2\u3c/sub\u3e +10% H\u3csub\u3e2\u3c/sub\u3e) were employed for testing the stability of the SrRuO\u3csub\u3e3\u3c/sub\u3e metal gate. Finally, electrical characteristics of the metal gate stack were investigated by high-frequency capacitance-voltage measurements. The properties of metal-organic chemical vapour grown SrRuO\u3csub\u3e3\u3c/sub\u3e gate electrode are analysed with regards to integration in CMOS devices.\u3c/p\u3

Preparation of SrRuO\u3csub\u3e3\u3c/sub\u3e films for advanced CMOS metal gates

\u3cp\u3eWe report on the growth and properties of SrRuO\u3csub\u3e3\u3c/sub\u3e films for application as metal gates for CMOS devices. The films were grown at 500°C by metal-organic chemical vapour deposition on Si substrates with thermal SiO\u3csub\u3e2\u3c/sub\u3e, atomic-layer deposited Al\u3csub\u3e2\u3c/sub\u3eO\u3csub\u3e3\u3c/sub\u3e and HfO \u3csub\u3e2\u3c/sub\u3e dielectric films. The films exhibit room temperature resistivity below 1 mΩ cm. We have analysed the interface between the SrRuO \u3csub\u3e3\u3c/sub\u3e metal gate and the oxide film by Rutherford backscattering and secondary ion mass spectroscopy. Annealing in an oxygen atmosphere and forming gas (90% N\u3csub\u3e2\u3c/sub\u3e +10% H\u3csub\u3e2\u3c/sub\u3e) were employed for testing the stability of the SrRuO\u3csub\u3e3\u3c/sub\u3e metal gate. Finally, electrical characteristics of the metal gate stack were investigated by high-frequency capacitance-voltage measurements. The properties of metal-organic chemical vapour grown SrRuO\u3csub\u3e3\u3c/sub\u3e gate electrode are analysed with regards to integration in CMOS devices.\u3c/p\u3