Status and Prospects of ZnO-Based Resistive Switching Memory Devices

In the advancement of the semiconductor device technology, ZnO could be a prospective alternative than the other metal oxides for its versatility and huge applications in different aspects. In this review, a thorough overview on ZnO for the application of resistive switching memory (RRAM) devices has been conducted. Various efforts that have been made to investigate and modulate the switching characteristics of ZnO-based switching memory devices are discussed. The use of ZnO layer in different structure, the different types of filament formation, and the different types of switching including complementary switching are reported. By considering the huge interest of transparent devices, this review gives the concrete overview of the present status and prospects of transparent RRAM devices based on ZnO. ZnO-based RRAM can be used for flexible memory devices, which is also covered here. Another challenge in ZnO-based RRAM is that the realization of ultra-thin and low power devices. Nevertheless, ZnO not only offers decent memory properties but also has a unique potential to be used as multifunctional nonvolatile memory devices. The impact of electrode materials, metal doping, stack structures, transparency, and flexibility on resistive switching properties and switching parameters of ZnO-based resistive switching memory devices are briefly compared. This review also covers the different nanostructured-based emerging resistive switching memory devices for low power scalable devices. It may give a valuable insight on developing ZnO-based RRAM and also should encourage researchers to overcome the challenges

Horizontal transport, mixing and retention in a large, shallow estuary: Río de la Plata

© 2014, Springer Science+Business Media Dordrecht. We use field data and a high-resolution three-dimensional (3D) hydrodynamic numerical model to investigate the horizontal transport and dispersion characteristics in the upper reaches of the shallow Río de la Plata estuary, located between the Argentinean and Uruguayan coasts, with the objective of relating the mixing characteristics to the likelihood of algal bloom formation. The 3D hydrodynamic model was validated with an extensive field experiment including both, synoptic profiling and in situ data, and then used to quantify the geographic variability of the local residence time and rate of dispersion. We show that during a high inflow regime, the aquatic environment near the Uruguayan coast, stretching almost to the middle of the estuary, had short residence time and horizontal dispersion coefficient of around 77 (formula presented.), compared to the conditions along the Argentinean coastal regime where the residence time was much longer and the dispersion coefficient (40 (formula pr esented.)) much smaller, making the Argentinian coastal margin more susceptible for algae blooms