5,824 research outputs found
Methods to Localize Shorts Between Power and Ground Circuits
In the competitive world of microprocessor design and manufacturing, rapid advancements can be facilitated by learning from the components made by one’s closest rivals. To make this possible, Orisar Inc. (formerly Semiconductor Insights) provides reverse engineering services to integrated circuit (IC) manufacturers. The process produces a circuit diagram from a chip and allows the manufacturer to learn about a competitor’s product. These services are also used to determine if any intellectual property infringements have been committed by their competitor.
Reverse engineering of integrated circuit is made difficult by the shrinking form factor and increasing transistor density. To perform this complex task Orisar Inc. employs sophisticated techniques to capture the design of an IC. Electron microscope photography captures a detailed image of an IC layer. Because a typical IC contains more than one layer, each layer is photographed and physically removed from the IC to expose the next layer. A noise removal algorithm is then applied to the pictures, which are then passed to pattern recognition software in order to transfer the layer design into a polygonal
representation of the circuit. At the last step a knowledgeable human expert looks at the polygonal representation and inputs the design into a standard electronic schematic with a CAD package.
This process us currently very time consuming. We propose a method which can be easily automated thereby saving valuable worker time and accelerating the process of reverse engineering
Thinning CsPb2Br5 Perovskite Down to Monolayers: Cs-dependent Stability
Using first-principles density functional theory calculations, we
systematically investigate the structural, electronic and vibrational
properties of bulk and potential single-layer structures of perovskite-like
CsPb2Br5 crystal. It is found that while Cs atoms have no effect on the
electronic structure, their presence is essential for the formation of stable
CsPb2Br5 crystals. Calculated vibrational spectra of the crystal reveal that
not only the bulk form but also the single-layer forms of CsPb2Br5 are
dynamically stable. Predicted single-layer forms can exhibit either
semiconducting or metallic character. Moreover, modification of the structural,
electronic and magnetic properties of single-layer CsPb2Br5 upon formation of
vacancy defects is investigated. It is found that the formation of Br vacancy
(i) has the lowest formation energy, (ii) significantly changes the electronic
structure, and (iii) leads to ferromagnetic ground state in the single-layer
CsPb2Br5 . However, the formation of Pb and Cs vacancies leads to p-type doping
of the single-layer structure. Results reported herein reveal that single-layer
CsPb2Br5 crystal is a novel stable perovskite with enhanced functionality and a
promising candidate for nanodevice applications.Comment: 18 pages, 5 figure
Thinning CsPb2Br5 Perovskite Down to Monolayers: Cs-dependent Stability
Using first-principles density functional theory calculations, we
systematically investigate the structural, electronic and vibrational
properties of bulk and potential single-layer structures of perovskite-like
CsPb2Br5 crystal. It is found that while Cs atoms have no effect on the
electronic structure, their presence is essential for the formation of stable
CsPb2Br5 crystals. Calculated vibrational spectra of the crystal reveal that
not only the bulk form but also the single-layer forms of CsPb2Br5 are
dynamically stable. Predicted single-layer forms can exhibit either
semiconducting or metallic character. Moreover, modification of the structural,
electronic and magnetic properties of single-layer CsPb2Br5 upon formation of
vacancy defects is investigated. It is found that the formation of Br vacancy
(i) has the lowest formation energy, (ii) significantly changes the electronic
structure, and (iii) leads to ferromagnetic ground state in the single-layer
CsPb2Br5 . However, the formation of Pb and Cs vacancies leads to p-type doping
of the single-layer structure. Results reported herein reveal that single-layer
CsPb2Br5 crystal is a novel stable perovskite with enhanced functionality and a
promising candidate for nanodevice applications.Comment: 18 pages, 5 figure
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