Optical properties of arrays of quantum dots with internal disorder

Optical properties of large arrays of isolated quantum dots are discussed in order to interpret the existent photoluminescence data. The presented theory explains the large observed shift between the lowest emission and absorption energies as the average distance between the ground and first excited states of the dots. The lineshape of the spectra is calculated for the case when the fluctuations of the energy levels in quantum dots are due to the alloy composition fluctuations. The calculated lineshape is in good agreement with the experimental data. The influence of fluctuations of the shape of quantum dots on the photoluminescence spectra is also discussed.Comment: 7 pages (twocolumn) LATEX, 6 Postscript figure

Anomalous magnetophotoluminescence as a result of level repulsion in arrays of quantum dots

Selectively excited photoluminescence (SPL) of an array of self-organized In$_{0.5}$Ga$_{0.5}$As quantum dots has been measured in a magnetic field up to 11T. Anomalous magnetic field sensitivity of the SPL spectra has been observed under conditions for which the regular photoluminescence spectra is insensitive to the magnetic field due to large inhomogeneous broadening. The anomalous sensitivity is interpreted in terms of the repulsion of excited levels of the dots in a random potential. A theory presented to describe this phenomena is in excellent agreement with the experimental data. The data estimated the correlation in the positions of excited levels of the dots to be 94%. The magnetic field dependence allows the determination of the reduced cyclotron effective mass in a dot. For our sample we have obtained $m_em_h/(m_e+m_h)=0.034m_0$.Comment: 12 revtex preprint pages + 4 ps figures, uuencode

Probing energy barriers and quantum confined states of buried semiconductor heterostructures with ballistic carrier injection: An experimental study

A three-terminal spectroscopy that probes both subsurface energy barriers and interband optical transitions in a semiconductor heterostructure is demonstrated. A metal-base transistor with a unipolar p-type semiconductor collector embedding InAs/GaAs quantum dots (QDs) is studied. Using minority/majority carrier injection, ballistic electron emission spectroscopy and its related hot-carrier scattering spectroscopy measures barrier heights of a buried AlxGa1-xAs layer in conduction band and valence band respectively, the band gap of Al0.4Ga0.6As is therefore determined as 2.037 +/- 0.009 eV at 9 K. Under forward collector bias, interband electroluminescence is induced by the injection of minority carriers with sub-bandgap kinetic energies. Three emission peaks from InAs QDs, InAs wetting layer, and GaAs are observed in concert with minority carrier injection.Comment: 11 pages, 4 figures, submitted to Physical Review

Retail cannabis prices in California through legalization, regulation and taxation

Traditional sources of retail price information, such as scanner data and government price surveys, are not available for cannabis. To help fill this gap, between October 2016 and July 2018 the UC Agricultural Issues Center collected online retail price ranges for dried cannabis flower and cannabis-oil cartridges at retailers around California. During this 21-month time period, the legal landscape of the California cannabis market underwent three broad regulatory changes: adult-use decriminalization, licensing and regulation and mandatory testing. This article provides unique primary data on legal cannabis prices in California before and after each of these three changes. Our data are imperfect but do provide a glimpse of the patterns of California cannabis prices at different times. For dried cannabis flower, we observe relatively stable retail prices over the 21-month period at both the top and bottom ends of the price range. For cannabis-oil cartridges, we observe relatively stable prices at the bottom end but increasing prices at the top end between November 2017 and July 2018

Polarization dependence of emission spectra of multiexcitons in self-assembled quantum dots

We have investigated the polarization dependence of the emission spectra of p-shell multiexcitons of a quantum dot when the single particle level spacing is larger than the characteristic energy of the Coulomb interactions. We find that there are many degenerate multiexciton states. The emission intensities depend on the number of degenerate initial and final states of the optical transitions. However, unlike the transition energies, they are essentially independent of the strength of the Coulomb interactions. In the presence of electron-hole symmetry the independence is exact.Comment: 7 pages, 5 figures, published in Solid State Commu

Non-linear exciton spin-splitting in single InAs/GaAs self-assembled quantum structures in ultrahigh magnetic fields

We report on the magnetic field dispersion of the exciton spin-splitting and diamagnetic shift in single InAs/GaAs quantum dots (QDs) and dot molecules (QDMs) up to $B$ = 28 T. Only for systems with strong geometric confinement, the dispersions can be well described by simple field dependencies, while for dots with weaker confinement considerable deviations are observed: most importantly, in the high field limit the spin-splitting shows a non-linear dependence on $B$, clearly indicating light hole admixtures to the valence band ground state

Correlated Photon-Pair Emission from a Charged Single Quantum Dot

The optical creation and recombination of charged biexciton and trion complexes in an (In,Ga)As/GaAs quantum dot is investigated by micro-photoluminescence spectroscopy. Photon cross-correlation measurements demonstrate the temporally correlated decay of charged biexciton and trion states. Our calculations provide strong evidence for radiative decay from the excited trion state which allows for a deeper insight into the spin configurations and their dynamics in these systems.Comment: 5 pages, 3 figures, submitted for publicatio

Fidelity of Optically Controlled Single- and Two-Qubit Operations on Coulomb-Coupled Quantum Dots

We investigate the effect of the Coulomb interaction on the applicability of quantum gates on a system of two Coulomb-coupled quantum dots. We calculate the fidelity for a single- and a two-qubit gate and the creation of Bell states in the system. The influence of radiative damping is also studied. We find that the application of quantum gates based on the Coulomb interaction leads to significant input state-dependent errors which strongly depend on the Coulomb coupling strength. By optimizing the Coulomb matrix elements via the material and the external field parameters, error rates in the range of $10^{-3}$ can be reached. Radiative dephasing is a more serious problem and typically leads to larger errors on the order of $10^{-2}$ for the considered gates. In the specific case of the generation of a maximally entangled Bell state, error rates in the range of $10^{-3}$ can be achieved even in the presence of radiative dephasing.Comment: 8 pages, 10 figures; final versio

Exciton lifetime in InAs/GaAs quantum dot molecules

The exciton lifetimes $T_1$ in arrays of InAs/GaAs vertically coupled quantum dot pairs have been measured by time-resolved photoluminescence. A considerable reduction of $T_1$ by up to a factor of $\sim$ 2 has been observed as compared to a quantum dots reference, reflecting the inter-dot coherence. Increase of the molecular coupling strength leads to a systematic decrease of $T_1$ with decreasing barrier width, as for wide barriers a fraction of structures shows reduced coupling while for narrow barriers all molecules appear to be well coupled. The coherent excitons in the molecules gain the oscillator strength of the excitons in the two separate quantum dots halving the exciton lifetime. This superradiance effect contributes to the previously observed increase of the homogeneous exciton linewidth, but is weaker than the reduction of $T_2$. This shows that as compared to the quantum dots reference pure dephasing becomes increasingly important for the molecules

Actes de la Conférence nationale et du 13e Colloque de l'AQPC

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