Anomalous Cooper pair interference on Bi2Te3 surface

It is believed that the edges of a chiral p-wave superconductor host Majorana modes, relating to a mysterious type of fermions predicted seven decades ago. Much attention has been paid to search for p-wave superconductivity in solid-state systems, including recently those with strong spin-orbit coupling (SOC). However, smoking-gun experiments are still awaited. In this work, we have performed phase-sensitive measurements on particularly designed superconducting quantum interference devices constructing on the surface of topological insulators Bi2Te3, in such a way that a substantial portion of the interference loop is built on the proximity-effect-induced superconducting surface. Two types of Cooper interference patterns have been recognized at low temperatures. One is s-wave like and is contributed by a zero-phase loop inhabited in the bulk of Bi2Te3. The other, being identified to relate to the surface states, is anomalous for that there is a phase shift between the positive and negative bias current directions. The results support that the Cooper pairs on the surface of Bi2Te3 have a 2\pi Berry phase which makes the superconductivity p_x+ip_y-wave-like. Mesoscopic hybrid rings as constructed in this experiment are presumably arbitrary-phase loops good for studying topological quantum phenomena.Comment: supplementary material adde

Strong Superconducting Proximity Effect in Pb-Bi2Te3 Hybrid Structures

Majarona fermions (MFs) were predicted more than seven decades ago but are yet to be identified [1]. Recently, much attention has been paid to search for MFs in condensed matter systems [2-10]. One of the seaching schemes is to create MF at the interface between an s-wave superconductor (SC) and a 3D topological insulator (TI) [11-13]. Experimentally, progresses have been achieved in the observations of a proximity-effect-induced supercurrent [14-16], a perfect Andreev reflection [17] and a conductance peak at the Fermi level [18]. However, further characterizations are still needed to clarify the nature of the SC-TI interface. In this Letter, we report on a strong proximity effect in Pb-Bi2Te3 hybrid structures, based on which Josephson junctions and superconducting quantum interference devices (SQUIDs) can be constructed. Josephson devices of this type would provide a test-bed for exploring novel phenomena such as MFs in the future.Comment: 12 pages, 4 figure

Proximity effect at superconducting Sn-Bi2Se3 interface

We have investigated the conductance spectra of Sn-Bi2Se3 interface junctions down to 250 mK and in different magnetic fields. A number of conductance anomalies were observed below the superconducting transition temperature of Sn, including a small gap different from that of Sn, and a zero-bias conductance peak growing up at lower temperatures. We discussed the possible origins of the smaller gap and the zero-bias conductance peak. These phenomena support that a proximity-effect-induced chiral superconducting phase is formed at the interface between the superconducting Sn and the strong spin-orbit coupling material Bi2Se3.Comment: 7 pages, 8 figure

Electric and Magnetic Tuning Between the Trivial and Topological Phases in InAs/GaSb Double Quantum Wells

Among the theoretically predicted two-dimensional topological insulators, InAs/GaSb double quantum wells (DQWs) have a unique double-layered structure with electron and hole gases separated in two layers, which enables tuning of the band alignment via electric and magnetic fields. However, the rich trivial-topological phase diagram has yet to be experimentally explored. We present an in situ and continuous tuning between the trivial and topological insulating phases in InAs/GaSb DQWs through electrical dual-gating. Furthermore, we show that an in-plane magnetic field shifts the electron and hole bands relatively to each other in momentum space, functioning as a powerful tool to discriminate between the topologically distinct states

Spin-orbit interaction in a dual gated InAs/GaSb quantum well

Spin-orbit interaction is investigated in a dual gated InAs/GaSb quantum well. Using an electric field the quantum well can be tuned between a single carrier regime with exclusively electrons as carriers and a two-carriers regime where electrons and holes coexist. Spin-orbit interaction in both regimes manifests itself as a beating in the Shubnikov-de Haas oscillations. In the single carrier regime the linear Dresselhaus strength is characterized by $\beta =$ 28.5 meV$\AA$ and the Rashba coefficient $\alpha$ is tuned from 75 to 53 meV$\AA$ by changing the electric field. In the two-carriers regime the spin splitting shows a nonmonotonic behavior with gate voltage, which is consistent with our band structure calculations