Citizen Suit Attorney Fee Shifting Awards: A Critical Examination of Government-“Subsidized” Litigation

Silicon Carbide (SiC) is an important wide band gap semiconductor with outstanding electronic properties. With figures of merit far better than silicon, SiC is believed to replace and outcompete silicon in many applications using high frequencies, high voltage and high temperatures. With the introduction of seeded sublimation technique, a realisation of substrates with large diameter and high quality became possible. Recent progress in the bulk growth using high temperature chemical vapour deposition (HTCVD) has shown excellent results with high purity substrates with semi insulating (SI) properties. The availability of high quality SI substrates allows the fabrication of microwave devices with low rf losses such as the Metal Schottky Field Effect Transistor (MESFET). With the introduction of the hot-wall CVD technique, thick low doped n-type epitaxial layers have been grown for high power devices (> 4 kV) such as the PiN diode. The main contribution of the present work relates to the investigation of growth of MESFET structures. The goal has been to demonstrate the ability to grow MESFET structures using the hot-wall CVD technique. The challenge with abrupt interfaces and controlled doping has been investigated. A comprehensive investigation has been made on how nitrogen and aluminum dopant atoms incorporate into the SiC lattice using the hot-wall CVD technique. Fundamental research of MESFET structures has been combined with growth of device structures for both Swedish and European groups as well as industries. The research has been focused towards the understanding of dopant incorporation, characterization of doped epitaxial layers, the growth of device structures, the modelling of temperature distribution in a hot-wall susceptor and the development of growth systems for future up scaling. In paper 1 we present how the nitrogen dopant is incorporated into the SiC lattice. The influence of several different growth parameters on the nitrogen incorporation is presented. Equilibrium thermodynamical calculations have been performed to give a further insight into the incorporation mechanism. The investigation shows that the N2 molecule itself does not contribute directly to the nitrogen incorporation, however, molecules like the HCN and HNC are more likely. In paper 2 the incorporation of the aluminum dopant into the SiC lattice is investigated in a similar way as the nitrogen incorporation in paper 1. The results show that the aluminum incorporation in SiC is mainly controlled by the carbon coverage on the SiC surface. The investigation shows that it is difficult to obtain high aluminum doping on carbon face whereas the silicon face is sensitive to changes of the growth parameters. High growth rate resulted in a diffusion controlled incorporation. In Paper 3 we present the results from the growth of MESFET structures as well as characterization of the structures and final device properties. Knowledge taken from paper 1 and 2 was used to improve the abruptness of the grown structures. Paper 4 presents the results obtained by low temperature photoluminescence (LTPL) on separately grown 4H-SiC epitaxial layers. Doping calibration curves for nitrogen in the doping range from 1⋅1014 to 2⋅1019 cm-3 are presented. A discussion concerning the Mott transition is also presented. Paper 5 presents the results of the use of simulation to investigate the heating of a hot-wall CVD reactor. New susceptor and coil design are tested. The simulation has been verified with experimental heating tests which show excellent agreement. The new design has a temperature variation of less than 0.5 % over more than 70% of the total susceptor length in addition to a decreased power input of 15 %. In the final two papers, paper 6 and 7, we present work of growth of AlN on SiC. Thin films were grown and characterized with different techniques concerning crystal quality and thickness. The use of infrared reflectance and the features of the AlN reststrahl reflectance band allowed us to determine the thickness of AlN films as thin as 250 Å

Magnetic Resonance Spectroscopy of the Brain in Alcohol Abuse.

Magnetic resonance (MR) technology produces data on brain structure and activity without relying on radiation or invasive surgery. Magnetic resonance imaging (MRI) creates images, and magnetic resonance spectroscopy (MRS) produces spectra based on the ability of atomic nuclei in tissues to absorb and release pulses of energy. MRS studies of alcohol in the brain reveal that only a portion of the alcohol in the brain can be detected by MR technology, suggesting that alcohol there exists in multiple pools. The pools not visible using MRS is hypothesized to be bound to cell membranes. Indirect evidence from MR studies of chronic alcohol abusers suggests that tolerance to alcohol's effects results in an increased rigidity of cell membranes that forces more alcohol to remain in the MR-visible pool (i.e., the pool not bound to membranes) compared with alcohol in the brains of nontolerant people

Resocialization: A Neglected Paradigm

The micro clinical sociologist is better understood as being a social role change agent than as a “counselor”\u27 or a “otherapist.” Many of the personal problems which clients bring to clinicians are the result of dysfunctional social roles. These clients are best helped by Resocialization, that is, by the alteration or replacement of their failed roles. This can be accomplished by a) reexperiencing the failed roles, b) letting go of them, and c) renegotiating new, more satisfying roles

Dysfunctional Role Maintenance

Many of the problems that clients bring to clinical sociologists are caused by dysfunctional social roles that they are unable to change. These roles are often fixed in place by dysfunctional variations of the mechanisms that normally stabilize role structures. The cognitive, emotional, volitional, and social components of role scripts that ordinarily keep roles from changing also serve to maintain painful ones. Understanding how they accomplish this is the first step toward facilitating effective personal growth

Abnormal attentions towards the British Royal Family. Factors associated with approach and escalation

Abnormal approach and escalation from communication to physical intrusion are central concerns in managing risk to prominent people. This study was a retrospective analysis of police files of those who have shown abnormal attentions toward the British Royal Family. Approach (n = 222), compared with communication only (n = 53), was significantly associated with specific factors, most notably serious mental illness and grandiosity. In a sample of those who engaged in abnormal communication (n = 132), those who approached (n = 79) were significantly more likely to evidence mental illness and grandiosity, to use multiple communications, to employ multiple means of communication, and to be driven by motivations that concerned a personal entitlement to the prominent individual. Logistic regression produced a model comprising grandiosity, multiple communications, and multiple means of communication, for which receiver operating characteristic (ROC) analysis gave an area under the curve (AUC) of 0.82. The implications of these findings are discussed in relation to those for other target groups

Konzept und Bedeutung für die Transformationen in Osteuropa

2\. Aufl

Family Preservation in Perspective

This essay traces the family preservation movement to its permanency planning roots; discusses the principles and underlying philosophy of the movement, and suggests the appropriate context for considering further development of child welfare services

Irreversible Thermodynamics

Contains reports on one research project