Synchronization of spin-transfer oscillators driven by stimulated microwave currents

We have simulated the non-linear dynamics of networks of spin-transfer oscillators. The oscillators are magnetically uncoupled but electrically connected in series. We use a modified Landau-Lifschitz- Gilbert equation to describe the motion of each oscillator in the presence of the oscillations of all the others. We show that the oscillators of the network can be synchronized not only in frequency but also in phase. The coupling is due to the microwave components of the current induced in each oscillator by the oscillations in all the other oscillators. Our results show how the emitted microwave power of spin-transfer oscillators can be considerably enhanced by current-induced synchronization in an electrically connected network. We also discuss the possible application of our synchronization mechanism to the interpretation of the surprisingly narrow microwave spectrum in some isolated spin-transfer oscillators

Theory on the Temperature Dependence of Giant Magnetoresistance

The temperature dependence of the giant magnetoresistance (GMR) for currents parallel and perpendicular to the multilayer plane, is discussed by taking account of the random exchange potentials, phonon scatterings and spin fluctuations. The effect of spin fluctuations, which plays an important role at finite temperatures, is included by means of the static functional-integral method developed previously by the present author. Our model calculations well explain the observed features of the parallel and perpendicular GMR of Fe/Cr and Co/Cu multilayers recently reported by Gijs {\it et al}.Comment: 20 pages (LATEX), 5 figures available on request to [email protected]

Anomalous Hall Effect in Ferromagnetic Metals: Role of Phonons at Finite Temperature

The anomalous Hall effect in a multiband tight-binding model is numerically studied taking into account both elastic scattering by disorder and inelastic scattering by the electron-phonon interaction. The Hall conductivity is obtained as a function of temperature $T$, inelastic scattering rate $\gamma$, chemical potential $\mu$, and impurity concentration $x_{\rm imp}$. We find that the new scaling law holds over a wide range of these parameters; $-\sigma_{xy}= (\alpha \sigma_{xx0}^{-1} + \beta \sigma_{xx0}^{-2}) \sigma_{xx}^2 + b$, with $\sigma_{\mu \nu}$ ($\sigma_{\mu \nu 0}$) being the conductivity tensor (with only elastic scattering), which corresponds to the recent experimental observation [Phys. Rev. Lett. {\bf 103} (2009) 087206]. The condition of this scaling is examined. Also, it is found that the intrinsic mechanism depends on temperature under a resonance condition.Comment: 5 figure

Anisotropic magneto-Coulomb effect versus spin accumulation in a ferromagnetic single-electron device

We investigate the magneto-transport characteristics of nanospintronics single-electron devices. The devices consist of single non-magnetic nano-objects (nanometer size nanoparticles of Al or Cu) connected to Co ferromagnetic leads. The comparison with simulations allows us attribute the observed magnetoresistance to either spin accumulation or anisotropic magneto-Coulomb effect (AMC), two effects with very different origins. The fact that the two effects are observed in similar samples demonstrates that a careful analysis of Coulomb blockade and magnetoresistance behaviors is necessary in order to discriminate them in magnetic single-electron devices. As a tool for further studies, we propose a simple way to determine if spin transport or AMC effect dominates from the Coulomb blockade I-V curves of the spintronics device

Spin Accumulation in Nondegenerate and Heavily Doped p-Type Germanium

Spin accumulation induced in p-type germanium from Fe/MgO tunnel contacts is studied as a function of hole concentration p (10^16 - 10^19 cm-3). For all p, the contacts are free of rectification and Schottky barrier, guaranteeing spin injection into the Ge and preventing spin accumulation enhancement by two-step tunneling via interface states. The observed spin accumulation is smallest for nondegenerate doping (p ~ 10^16 cm-3) and increases for heavily doped Ge. This trend is opposite to what is expected from spin injection and diffusion theory. For heavily doped Ge, the observed spin accumulation is orders of magnitude larger than predicted.Comment: To appear in Appl. Phys. Expres