Channeling Effect and Improvement of the Efficiency of Charged Particle Registration with Crystal Scintillators

The importance is emphasized of taking into account the channeling along the low index crystallographic axes and planes of a part of low-energy (1-10 keV) recoil ions in measurements of their parameters with crystal scintillators of the type of NaI(Tl) etc. Because the nucleus stopping power in channels is low as compared with electronic stopping power, the light yield of the scintillator must be, accordingly, higher in the given case than that for ions having higher energy (tens keV and more), which lose most part of their energy via nuclear collisions outside channels. Hence, in particular, it follows that the DAMA/NaI observations in Gran Sasso of the annual modulation of the signal frequency in a narrow range of scintillations with an amplitude of 2-6 keV electron equivalent may be due to incidence onto the Earth of exceedingly massive particles (of the type of Planckian objects) from elongated Earth-crossing heliocentric orbits at a velocity of 30-50 km/s. In NaI(Tl), these particles create the iodine recoil ions with just the energy of 2-6 keV.Comment: 10 page

Simulation of phosphorus implantation into silicon with a single-parameter electronic stopping power model

We simulate dopant profiles for phosphorus implantation into silicon using a new model for electronic stopping power. In this model, the electronic stopping power is factorized into a globally averaged effective charge Z1*, and a local charge density dependent electronic stopping power for a proton. There is only a single adjustable parameter in the model, namely the one electron radius rs0 which controls Z1*. By fine tuning this parameter, we obtain excellent agreement between simulated dopant profiles and the SIMS data over a wide range of energies for the channeling case. Our work provides a further example of implant species, in addition to boron and arsenic, to verify the validity of the electronic stopping power model and to illustrate its generality for studies of physical processes involving electronic stopping.Comment: 11 pages, 7 figures. See http://bifrost.lanl.gov/~reed

Influence of Collision Cascade Statistics on Pattern Formation of Ion-Sputtered Surfaces

Theoretical continuum models that describe the formation of patterns on surfaces of targets undergoing ion-beam sputtering, are based on Sigmund's formula, which describes the spatial distribution of the energy deposited by the ion. For small angles of incidence and amorphous or polycrystalline materials, this description seems to be suitable, and leads to the classic BH morphological theory [R.M. Bradley and J.M.E. Harper, J. Vac. Sci. Technol. A 6, 2390 (1988)]. Here we study the sputtering of Cu crystals by means of numerical simulations under the binary-collision approximation. We observe significant deviations from Sigmund's energy distribution. In particular, the distribution that best fits our simulations has a minimum near the position where the ion penetrates the surface, and the decay of energy deposition with distance to ion trajectory is exponential rather than Gaussian. We provide a modified continuum theory which takes these effects into account and explores the implications of the modified energy distribution for the surface morphology. In marked contrast with BH's theory, the dependence of the sputtering yield with the angle of incidence is non-monotonous, with a maximum for non-grazing incidence angles.Comment: 12 pages, 13 figures, RevTe

Urine Fetuin-A is a biomarker of autosomal dominant polycystic kidney disease progression.

BACKGROUND: Autosomal dominant polycystic kidney disease (ADPKD) is a genetic disorder characterized by numerous fluid-filled cysts that frequently result in end-stage renal disease. While promising treatment options are in advanced clinical development, early diagnosis and follow-up remain a major challenge. We therefore evaluated the diagnostic value of Fetuin-A as a new biomarker of ADPKD in human urine. RESULTS: We found that renal Fetuin-A levels are upregulated in both Pkd1 and Bicc1 mouse models of ADPKD. Measurement by ELISA revealed that urinary Fetuin-A levels were significantly higher in 66 ADPKD patients (17.5 ± 12.5 μg/mmol creatinine) compared to 17 healthy volunteers (8.5 ± 3.8 μg/mmol creatinine) or 50 control patients with renal diseases of other causes (6.2 ± 2.9 μg/mmol creatinine). Receiver operating characteristics (ROC) analysis of urinary Fetuin-A levels for ADPKD rendered an optimum cut-off value of 12.2 μg/mmol creatinine, corresponding to 94% of sensitivity and 60% of specificity (area under the curve 0.74 ; p = 0.0019). Furthermore, urinary Fetuin-A levels in ADPKD patients correlated with the degree of renal insufficiency and showed a significant increase in patients with preserved renal function followed for two years. CONCLUSIONS: Our findings establish urinary Fetuin-A as a sensitive biomarker of the progression of ADPKD. Further studies are required to examine the pathogenic mechanisms of elevated renal and urinary Fetuin-A in ADPKD

Charge gap in the one--dimensional dimerized Hubbard model at quarter-filling

We propose a quantitative estimate of the charge gap that opens in the one-dimensional dimerized Hubbard model at quarter-filling due to dimerization, which makes the system effectively half--filled, and to repulsion, which induces umklapp scattering processes. Our estimate is expected to be valid for any value of the repulsion and of the parameter describing the dimerization. It is based on analytical results obtained in various limits (weak coupling, strong coupling, large dimerization) and on numerical results obtained by exact diagonalization of small clusters. We consider two models of dimerization: alternating hopping integrals and alternating on--site energies. The former should be appropriate for the Bechgaard salts, the latter for compounds where the stacks are made of alternating $TMTSF$ and $TMTTF$ molecules. % $(TMTSF)_2 X$ and $(TMTTF)_2 X$ ($X$ denotes $ClO_4$, $PF_6$, $Br$...).Comment: 33 pages, RevTeX 3.0, figures on reques

Polaron and bipolaron dispersion curves in one dimension for intermediate coupling

Bipolaron energies are calculated as a function of wave vector by a variational method of Gurari appropriate for weak or intermediate coupling strengths, for a model with electron-phonon interactions independent of phonon wave vectors and a short-ranged Coulomb repulsion. It is assumed that the bare electrons have a constant effective mass. A two-parameter trial function is taken for the relative motion of the two electrons in the bipolaron. Energies of bipolarons are compared with those of two single polarons as a function of wave vector for various parameter values. Results for effective masses at the zone center are also obtained. Comparison is made with data of other authors for bipolarons in the Hubbard-Holstein model, which differs mainly from the present model in that it has a tight-binding band structure for the bare electrons.Comment: 11 pages including six figures. Physical Review B, to be publishe

Absolute instruments and perfect imaging in geometrical optics

We investigate imaging by spherically symmetric absolute instruments that provide perfect imaging in the sense of geometrical optics. We derive a number of properties of such devices, present a general method for designing them and use this method to propose several new absolute instruments, in particular a lens providing a stigmatic image of an optically homogeneous region and having a moderate refractive index range.Comment: 20 pages, 9 image

An Efficient Molecular Dynamics Scheme for the Calculation of Dopant Profiles due to Ion Implantation

We present a highly efficient molecular dynamics scheme for calculating the concentration depth profile of dopants in ion irradiated materials. The scheme incorporates several methods for reducing the computational overhead, plus a rare event algorithm that allows statistically reliable results to be obtained over a range of several orders of magnitude in the dopant concentration. We give examples of using this scheme for calculating concentration profiles of dopants in crystalline silicon. Here we can predict the experimental profile over five orders of magnitude for both channeling and non-channeling implants at energies up to 100s of keV. The scheme has advantages over binary collision approximation (BCA) simulations, in that it does not rely on a large set of empirically fitted parameters. Although our scheme has a greater computational overhead than the BCA, it is far superior in the low ion energy regime, where the BCA scheme becomes invalid.Comment: 17 pages, 21 figures, 2 tables. See: http://bifrost.lanl.gov/~reed

Resonant charging and stopping power of slow channelling atoms in a crystalline metal

Fast moving ions travel great distances along channels between low-index crystallographic planes, slowing through collisions with electrons, until finally they hit a host atom initiating a cascade of atomic displacements. Statistical penetration ranges of incident particles are reliably used in ion-implantation technologies, but a full, necessarily quantum-mechanical, description of the stopping of slow, heavy ions is challenging and the results of experimental investigations are not fully understood. Using a self-consistent model of the electronic structure of a metal, and explicit treatment of atomic structure, we find by direct simulation a resonant accumulation of charge on a channelling ion analogous to the Okorokov effect but originating in electronic excitation between delocalized and localized valence states on the channelling ion and its transient host neighbours, stimulated by the time-periodic potential experienced by the channelling ion. The charge resonance reduces the electronic stopping power on the channelling ion. These are surprising and interesting new chemical aspects of channelling, which cannot be predicted within the standard framework of ions travelling through homogeneous electron gases or by considering either ion or target in isolation. © IOP Publishing Ltd and Deutsche Physikalische Gesellschaft