Tunneling magnetoresistance in devices based on epitaxial NiMnSb with uniaxial anisotropy

We demonstrate tunnel magnetoresistance (TMR) junctions based on a tri layer system consisting of an epitaxial NiMnSb, aluminum oxide and CoFe tri layer. The junctions show a tunnelling magnetoresistance of Delta R/R of 8.7% at room temperature which increases to 14.7% at 4.2K. The layers show clear separate switching and a small ferromagnetic coupling. A uniaxial in plane anisotropy in the NiMnSb layer leads to different switching characteristics depending on the direction in which the magnetic field is applied, an effect which can be used for sensor applications.Comment: 8 pages, 3 figures, submitted to Appl. Phys. Let

Response of maize inbred lines to two European corn borer (Ostrinia nubilalis) strains in Canada

Six lignées de maïs-grain (CM47, A619, F2, CM107, CM7 et A654) ont été évaluées en 1986 et 1987 dans quatre localités de l'Ontario et du Québec pour leur résistance à des infestations artificielles de la pyrale du maïs, Ostrinia nubilalis, de la race univoltine et de la première génération de la race bivoltine. Trois critères ont été utilisés: la criblure du feuillage, les dégâts totaux des plantes à la récolte, et le rapport longueur des galeries creusées par les chenilles dans les tiges sur la hauteur des plantes. Des interactions importantes ont été observées pour les critères utilisés entre les années et localités, mais la réaction des lignées de maïs a été plutôt constante. Pour tous les critères, la race univoltine a souvent causé, d'une façon significative, plus de dégâts aux plantes que la race bivoltine. En général, la lignée A619 a démontré le plus de résistance-tolérance tout en conservant une bonne tenue des tiges jusqu'à la récolte. On aurait avantage à utiliser la race univoltine dans les programmes d'amélioration génétique du maïs pour sa résistance à la pyrale.In 1986 and 1987, six maize inbred lines (CM47, A619, F2, CM107, CM7, and A654) were evaluated at four locations across Ontario and Quebec for their resistance to artificially infested univoltine and lst generation bivoltine strains of the European corn borer, Ostrinia nubilalis. Three criteria were used: leaf feeding, total plant damage at harvest and length of tunnels/plant height ratio. Substantial interactions in borer damage measurements were observed between locations and years, but inbred reaction was relatively consistent. For all criteria, the univoltine strain often caused significantly more damage than the bivoltine borer. In general, A619 had the greatest resistance-tolerance with good standability until harvest. Wherever possible, evaluation of genetic resistance in maize germplasm should be conducted using the univoltine borer strain

Strongly reduced bias dependence in spin-tunnel junctions obtained by ultraviolet light assisted oxidation

For future implementation of ferromagnetic tunnel junctions, we need a better understanding of the influence of the insulating barrier preparation method on the junction resistance, tunnel magnetoresistance (TMR), and its voltage bias dependence. In this letter, we focus on the bias dependence of junctions (Co-Al2O3-Ni80Fe20) prepared by ultraviolet light assisted in situ oxidation in an O-2 ambient. For an initial Al thickness of 1.3 nm, the resistance times area product of the junctions is 60 k Omega mu m(2), while showing up to 20% TMR at 5 mV bias. The decrease of TMR with bias voltage up to 1 V is remarkably small leading to V-1/2, for which half of the low-bias TMR remains, well over 0.6 V. (C) 2000 American Institute of Physics. [S0003-6951(00)02908-9]

Effect of microstructural evolution on magnetic properties of Ni thin films

Copyright © Indian Academy of Sciences.The magnetic properties of Ni thin films, in the range 20–500 nm, at the crystalline-nanocrystalline interface are reported. The effect of thickness, substrate and substrate temperature has been studied. For the films deposited at ambient temperatures on borosilicate glass substrates, the crystallite size, coercive field and magnetization energy density first increase and achieve a maximum at a critical value of thickness and decrease thereafter. At a thickness of 50 nm, the films deposited at ambient temperature onto borosilicate glass, MgO and silicon do not exhibit long-range order but are magnetic as is evident from the non-zero coercive field and magnetization energy. Phase contrast microscopy revealed that the grain sizes increase from a value of 30–50 nm at ambient temperature to 120–150 nm at 503 K and remain approximately constant in this range up to 593 K. The existence of grain boundary walls of width 30–50 nm is demonstrated using phase contrast images. The grain boundary area also stagnates at higher substrate temperature. There is pronounced shape anisotropy as evidenced by the increased aspect ratio of the grains as a function of substrate temperature. Nickel thin films of 50 nm show the absence of long-range crystalline order at ambient temperature growth conditions and a preferred [111] orientation at higher substrate temperatures. Thin films are found to be thermally relaxed at elevated deposition temperature and having large compressive strain at ambient temperature. This transition from nanocrystalline to crystalline order causes a peak in the coercive field in the region of transition as a function of thickness and substrate temperature. The saturation magnetization on the other hand increases with increase in substrate temperature.University Grants Commission for Centre of Advanced Studies in Physic

Search for the standard model Higgs boson in the H to ZZ to 2l 2nu channel in pp collisions at sqrt(s) = 7 TeV

A search for the standard model Higgs boson in the H to ZZ to 2l 2nu decay channel, where l = e or mu, in pp collisions at a center-of-mass energy of 7 TeV is presented. The data were collected at the LHC, with the CMS detector, and correspond to an integrated luminosity of 4.6 inverse femtobarns. No significant excess is observed above the background expectation, and upper limits are set on the Higgs boson production cross section. The presence of the standard model Higgs boson with a mass in the 270-440 GeV range is excluded at 95% confidence level.Comment: Submitted to JHE

Performance of the CMS Cathode Strip Chambers with Cosmic Rays

The Cathode Strip Chambers (CSCs) constitute the primary muon tracking device in the CMS endcaps. Their performance has been evaluated using data taken during a cosmic ray run in fall 2008. Measured noise levels are low, with the number of noisy channels well below 1%. Coordinate resolution was measured for all types of chambers, and fall in the range 47 microns to 243 microns. The efficiencies for local charged track triggers, for hit and for segments reconstruction were measured, and are above 99%. The timing resolution per layer is approximately 5 ns

Combined search for the quarks of a sequential fourth generation

Results are presented from a search for a fourth generation of quarks produced singly or in pairs in a data set corresponding to an integrated luminosity of 5 inverse femtobarns recorded by the CMS experiment at the LHC in 2011. A novel strategy has been developed for a combined search for quarks of the up and down type in decay channels with at least one isolated muon or electron. Limits on the mass of the fourth-generation quarks and the relevant Cabibbo-Kobayashi-Maskawa matrix elements are derived in the context of a simple extension of the standard model with a sequential fourth generation of fermions. The existence of mass-degenerate fourth-generation quarks with masses below 685 GeV is excluded at 95% confidence level for minimal off-diagonal mixing between the third- and the fourth-generation quarks. With a mass difference of 25 GeV between the quark masses, the obtained limit on the masses of the fourth-generation quarks shifts by about +/- 20 GeV. These results significantly reduce the allowed parameter space for a fourth generation of fermions.Comment: Replaced with published version. Added journal reference and DO