Carrier and Light Trapping in Graded Quantum Well Laser Structures

We investigated the carrier and light trapping in GaInAs/AlGaAs single quantum well laser structures by means of time resolved photoluminescence and Raman spectroscopy. The influence of the shape and depth of the confinement potential and of the cavity geometry was studied by using different AlGaAs/GaAs short-period superlattices as barriers. Our results show that grading the optical cavity improves considerably both carrier and light trapping in the quantum well, and that the trapping efficiency is enhanced by increasing the graded confining potential.Comment: PDF-format, 15 pages (including 4 figures), Applied Physics Letters (June 2000

Development of high-speed directly-modulated DFB and DBR lasers with surface gratings

The conventional distributed feedback and distributed Bragg reflector edge-emitting lasers employ buried gratings, which require two or more epitaxial growth steps. By using lateral corrugations of the ridge-waveguide as surface gratings the epitaxial overgrowth is avoided, reducing the fabrication complexity, increasing the yield and reducing the fabrication cost. The surface gratings are applicable to different materials, including Al-containing ones and can be easily integrated in complex device structures and photonic circuits. Single-contact and multiple contact edge-emitting lasers with laterally-corrugated ridge waveguide gratings have been developed both on GaAs and InP substrates with the aim to exploit the photon-photon resonance in order to extend their direct modulation bandwidth. The paper reports on the characteristics of such surface-grating-based lasers emitting both at 1.3 and 1.55 μm and presents the photon-photon resonance extended small-signal modulation bandwidth (> 20 GHz) achieved with a 1.6 mm long single-contact device under direct modulation. Similarly structured devices, with shorter cavity lengths are expected to exceed 40 GHz smallsignal modulation bandwidth under direct modulatio

Single-photon emission of InAs/InP quantum dashes at 1.55 μm and temperatures up to 80 K

This research was supported by the National Science Center of Poland within Grant No. 2011/02/A/ST3/00152.We report on single photon emission from a self-assembled InAs/InGaAlAs/InP quantum dash emitting at 1.55 µm at elevated temperatures. The photon auto-correlation histograms of the emission from a charged exciton indicate clear antibunching dips with as-measured g(2)(0) values significantly below 0.5 recorded at temperatures up to 80 K. It proves that charged exciton complex in a single quantum dash of the mature InP-based material system can act as a true single photon source up to at least liquid nitrogen temperature. This demonstrates the huge potential of InAs on InP nanostructures as non-classical light emitters for long-distance fiber-based secure communication technologies.PostprintPublisher PDFPeer reviewe

Electrical control of inter-dot electron tunneling in a quantum dot molecule

We employ ultrafast pump-probe spectroscopy to directly monitor electron tunneling between discrete orbital states in a pair of spatially separated quantum dots. Immediately after excitation, several peaks are observed in the pump-probe spectrum due to Coulomb interactions between the photo-generated charge carriers. By tuning the relative energy of the orbital states in the two dots and monitoring the temporal evolution of the pump-probe spectra the electron and hole tunneling times are separately measured and resonant tunneling between the two dots is shown to be mediated both by elastic and inelastic processes. Ultrafast (< 5 ps) inter-dot tunneling is shown to occur over a surprisingly wide bandwidth, up to ~8 meV, reflecting the spectrum of exciton-acoustic phonon coupling in the system

Heterodyne pump probe measurements of nonlinear dynamics in an indium phosphide photonic crystal cavity

Using a sensitive two-color heterodyne pump-probe technique, we investigate the carrier dynamics of an InP photonic crystal nanocavity. The heterodyne technique provides unambiguous results for all wavelength configurations, including the degenerate case, which cannot be investigated with the widely used homodyne technique. A model based on coupled mode theory including two carrier distributions is introduced to account for the relaxation dynamics, which is assumed to be governed by both diffusion and recombination

Exciton spin relaxation in InAs/InGaAlAs/InP(001) quantum dashes emitting near 1.55 μm

This research was supported by The National Science Center Grant MAESTRO No. 2011/02/A/ST3/00152. Ł. D. acknowledges the financial support from the Foundation for Polish Science within the START fellowship.Exciton spin and related optical polarization in self-assembled InAs/In0.53Ga0.23Al0.24As/InP(001) quantum dashes emitting at 1.55 μm are investigated by means of polarization- and time-resolved photoluminescence, as well as photoluminescence excitation spectroscopy, at cryogenic temperature. We investigate the influence of highly non-resonant and quasi-resonant optical spin pumping conditions on spin polarization and spin memory of the quantum dash ground state. We show that a spin pumping scheme, utilizing the longitudinal-optical-phonon-mediated coherent scattering process, can lead to the polarization degree above 50%. We discuss the role of intrinsic asymmetries in the quantum dash that influence values of the degree of polarization and its time evolution.PostprintPeer reviewe