The Nature of Thermopower in Bipolar Semiconductors

The thermoemf in bipolar semiconductors is calculated. It is shown that it is necessary to take into account the nonequilibrium distribution of electron and hole concentrations (Fermi quasilevels of the electrons and holes). We find that electron and hole electric conductivities of contacts of semiconductor samples with connecting wires make a substantial contribution to thermoemf.Comment: 17 pages, RevTeX 3.0 macro packag

Analytic model for a frictional shallow-water undular bore

We use the integrable Kaup-Boussinesq shallow water system, modified by a small viscous term, to model the formation of an undular bore with a steady profile. The description is made in terms of the corresponding integrable Whitham system, also appropriately modified by friction. This is derived in Riemann variables using a modified finite-gap integration technique for the AKNS scheme. The Whitham system is then reduced to a simple first-order differential equation which is integrated numerically to obtain an asymptotic profile of the undular bore, with the local oscillatory structure described by the periodic solution of the unperturbed Kaup-Boussinesq system. This solution of the Whitham equations is shown to be consistent with certain jump conditions following directly from conservation laws for the original system. A comparison is made with the recently studied dissipationless case for the same system, where the undular bore is unsteady.Comment: 24 page

Quantum orbits of R-matrix type

Given a simple Lie algebra \gggg, we consider the orbits in \gggg^* which are of R-matrix type, i.e., which possess a Poisson pencil generated by the Kirillov-Kostant-Souriau bracket and the so-called R-matrix bracket. We call an algebra quantizing the latter bracket a quantum orbit of R-matrix type. We describe some orbits of this type explicitly and we construct a quantization of the whole Poisson pencil on these orbits in a similar way. The notions of q-deformed Lie brackets, braided coadjoint vector fields and tangent vector fields are discussed as well.Comment: 18 pp., Late

New Mechanism of Magnetoresistance in Bulk Semiconductors: Boundary Condition Effects

We consider the electronic transport in bounded semiconductors in the presence of an external magnetic field. Taking into account appropriate boundary conditions for the current density at the contacts, a change in the magnetoresistance of bulk semiconductors is found as compared with the usual theory of galvanomagnetic effects in boundless media. New mechanism in magnetoresistance connected with the boundary conditions arises. In particular, even when the relaxation time is independent of the electron energy, magnetoresistance is not vanish.Comment: 7 pages, Elsart macro package (LaTeX2e edition

Mass Transfer Mechanism in Real Crystals by Pulsed Laser Irradiation

The dynamic processes in the surface layers of metals subjected activity of a pulsing laser irradiation, which destroyed not the crystalline structure in details surveyed. The procedure of calculation of a dislocation density generated in bulk of metal during the relaxation processes and at repeated pulse laser action is presented. The results of evaluations coincide with high accuracy with transmission electron microscopy dates. The dislocation-interstitial mechanism of laser-stimulated mass-transfer in real crystals is presented on the basis of the ideas of the interaction of structure defects in dynamically deforming medium. The good compliance of theoretical and experimental results approves a defining role of the presented mechanism of mass transfer at pulse laser action on metals. The possible implementation this dislocation-interstitial mechanism of mass transfer in metals to other cases of pulsing influences is justifiedComment: 10 pages, 2 figures, Late