Quantum analog of channeled electron trajectories in periodic magnetic and electric fields

We calculate the quantum states corresponding to the drifting and channeled classical orbits in a two-dimensional electron gas (2DEG) with strong magnetic and electric modulations along one spatial direction, $x$. The channeled states carry high, concentrated currents along the $y$ axis, and are confined in an effective potential well. The quantum and the classical states are compared.Comment: 8 pages with 4 included ps figures, contribution to "SemiMag 13" Nijmegen, August 1998, to appear in Physica

Vacancy-Impurity Complexes in Highly Sb-Doped Si Grown by Molecular Beam Epitaxy

Positron annihilation measurements, supported by first-principles electron-structure calculations, identify vacancies and vacancy clusters decorated by 1–2 dopant impurities in highly Sb-doped Si. The concentration of vacancy defects increases with Sb doping and contributes significantly to the electrical compensation. Annealings at low temperatures of 400–500 K convert the defects to larger complexes where the open volume is neighbored by 2–3 Sb atoms. This behavior is attributed to the migration of vacancy-Sb pairs and demonstrates at atomic level the metastability of the material grown by epitaxy at low temperature.Peer reviewe

Fluctuating selection models and Mcdonald-Kreitman type analyses

It is likely that the strength of selection acting upon a mutation varies through time due to changes in the environment. However, most population genetic theory assumes that the strength of selection remains constant. Here we investigate the consequences of fluctuating selection pressures on the quantification of adaptive evolution using McDonald-Kreitman (MK) style approaches. In agreement with previous work, we show that fluctuating selection can generate evidence of adaptive evolution even when the expected strength of selection on a mutation is zero. However, we also find that the mutations, which contribute to both polymorphism and divergence tend, on average, to be positively selected during their lifetime, under fluctuating selection models. This is because mutations that fluctuate, by chance, to positive selected values, tend to reach higher frequencies in the population than those that fluctuate towards negative values. Hence the evidence of positive adaptive evolution detected under a fluctuating selection model by MK type approaches is genuine since fixed mutations tend to be advantageous on average during their lifetime. Never-the-less we show that methods tend to underestimate the rate of adaptive evolution when selection fluctuates

Preparation of atomically clean and flat Si(100) surfaces by low-energy ion sputtering and low-temperature annealing

Si(100) surfaces were prepared by wet-chemical etching followed by 0.3-1.5keV Ar ion sputtering, either at elevated or room temperature. After a brief anneal under ultrahigh vacuum conditions, the resulting surfaces were examined by scanning tunneling microscopy. We find that wet-chemical etching alone cannot produce a clean and flat Si(100) surface. However, subsequent 300eV Ar ion sputtering at room temperature followed by a 973K anneal yields atomically clean and flat Si(100) surfaces suitable for nanoscale device fabrication.Comment: 13 pages, 3 figures, to be published in Applied Surface Scienc

Planar cyclotron motion in unidirectional superlattices defined by strong magnetic and electric fields: Traces of classical orbits in the energy spectrum

We compare the quantum and the classical description of the two-dimensional motion of electrons subjected to a perpendicular magnetic field and a one-dimensional lateral superlattice defined by spatially periodic magnetic and electric fields of large amplitudes. We explain in detail the complicated energy spectra, consisting of superimposed branches of strong and of weak dispersion, by the correspondence between the respective eigenstates and the ``channeled'' and ``drifting'' orbits of the classical description.Comment: 11 pages, 11 figures, to appear in Physical Review

The role of mutation rate variation and genetic diversity in the architecture of human disease

Background We have investigated the role that the mutation rate and the structure of genetic variation at a locus play in determining whether a gene is involved in disease. We predict that the mutation rate and its genetic diversity should be higher in genes associated with disease, unless all genes that could cause disease have already been identified. Results Consistent with our predictions we find that genes associated with Mendelian and complex disease are substantially longer than non-disease genes. However, we find that both Mendelian and complex disease genes are found in regions of the genome with relatively low mutation rates, as inferred from intron divergence between humans and chimpanzees, and they are predicted to have similar rates of non-synonymous mutation as other genes. Finally, we find that disease genes are in regions of significantly elevated genetic diversity, even when variation in the rate of mutation is controlled for. The effect is small nevertheless. Conclusions Our results suggest that gene length contributes to whether a gene is associated with disease. However, the mutation rate and the genetic architecture of the locus appear to play only a minor role in determining whether a gene is associated with disease

Frequency-dependent magnetotransport and particle dynamics in magnetic modulation systems

We analyze the dynamics of a charged particle moving in the presence of spatially-modulated magnetic fields. From Poincare surfaces of section and Liapunov exponents for characteristic trajectories we find that the fraction of pinned and runaway quasiperiodic orbits {\em vs}. chaotic orbits depends strongly on the ratio of cyclotron radius to the structure parameters, as well as on the amplitude of the modulated field. We present a complete characterization of the dynamical behavior of such structures, and investigate the contribution to the magnetoconductivity from all different orbits using a classical Kubo formula. Although the DC conductivity of the system depends strongly on the pinned and runaway trajectories, the frequency response reflects the topology of all different orbits, and even their unusual temporal behavior.Comment: Submitted to PRB - 14 figure files - REVTEX tex

Surface Diffusion and Islanding in Semiconductor Heterostructures

Molecular beam epitaxy (MBE) is an important technique for the creation of new, non-equilibrium semiconductor materials and structures exhibiting novel physical phenomena. Surface diffusion plays an important role in the growth of these structures, influencing such fundamental growth processes and constants as islanding, critical thickness and epitaxial temperatures. Two approaches to the general problem of surface diffusion and islanding, using the SiGe system as a prototypical semiconductor heterostructure, are discussed: The time evolution of patterned deposits, and kinetic studies of nucleation and growth. While disordered laminar growth occurs for deposition at 300 K, elevated temperatures lead to Stranski-Krastanow (SK) growth (uniform coverage SK with excess Ge in islands). Diffusion coefficients for Ge on Si(100) have been determined for coverages below SK and show a significant coverage dependence. They are extremely sensitive to contamination with carbon on the order of ≈0.05 ML, as well as to e-beam irradiation. In situ annealing experiments were performed to study the islanding process in real time. Provided the initial coverage exceeds the thickness of the SK layer, SK ≈3 ML on Si(100)2x1, the initially uniform but disordered layer begins to collapse into a SK-type morphology at about 250 °C. At a ramping rate of 0.1 °C/s this process is completed at ≈400 °C. A temperature dependence of the SK-layer thickness has been discovered for the first time. It is in excellent agreement with theoretical predictions

Gene expression drives the evolution of dominance.

Dominance is a fundamental concept in molecular genetics and has implications for understanding patterns of genetic variation, evolution, and complex traits. However, despite its importance, the degree of dominance in natural populations is poorly quantified. Here, we leverage multiple mating systems in natural populations of Arabidopsis to co-estimate the distribution of fitness effects and dominance coefficients of new amino acid changing mutations. We find that more deleterious mutations are more likely to be recessive than less deleterious mutations. Further, this pattern holds across gene categories, but varies with the connectivity and expression patterns of genes. Our work argues that dominance arises as a consequence of the functional importance of genes and their optimal expression levels