Entrepreneurial orientation and firm performance in the context of upper echelon theory.

Entrepreneurial Orientation (EO) is a firm-level phenomenon, which involves the firm’s prospects to take risks, be proactive, and be innovative. Most of the research assumes a positive EO-performance relationship adopting the EO-as-advantage perspective without providing enough theoretical foundations of the way EO enhances performance. This paper provides insights into the EO and firm performance relationship looking into the EO-as-experimentation perspective. Through EO-as-experimentation perspective, we argue for the importance of looking into the differential effects of each of the EO dimensions on firm performance in active and inactive firms. We hypothesized that the effect of each of the proactiveness and innovativeness dimension of EO on firm performance is positive among active firms and negative among inactive firms. Whereas risk taking dimension of EO is negative among active and inactive firms. Based on the results of firm fixed effect regression some empirical support for the hypotheses is presented and discussed

Single-photon emitting diode in silicon carbide

Electrically driven single-photon emitting devices have immediate applications in quantum cryptography, quantum computation and single-photon metrology. Mature device fabrication protocols and the recent observations of single defect systems with quantum functionalities make silicon carbide (SiC) an ideal material to build such devices. Here, we demonstrate the fabrication of bright single photon emitting diodes. The electrically driven emitters display fully polarized output, superior photon statistics (with a count rate of $>$300 kHz), and stability in both continuous and pulsed modes, all at room temperature. The atomic origin of the single photon source is proposed. These results provide a foundation for the large scale integration of single photon sources into a broad range of applications, such as quantum cryptography or linear optics quantum computing.Comment: Main: 10 pages, 6 figures. Supplementary Information: 6 pages, 6 figure

Photo induced ionization dynamics of the nitrogen vacancy defect in diamond investigated by single shot charge state detection

The nitrogen-vacancy centre (NV) has drawn much attention for over a decade, yet detailed knowledge of the photophysics needs to be established. Under typical conditions, the NV can have two stable charge states, negative (NV-) or neutral (NV0), with photo induced interconversion of these two states. Here, we present detailed studies of the ionization dynamics of single NV centres in bulk diamond at room temperature during illumination in dependence of the excitation wavelength and power. We apply a recent method which allows us to directly measure the charge state of a single NV centre, and observe its temporal evolution. Results of this work are the steady state NV- population, which was found to be always < 75% for 450 to 610 nm excitation wavelength, the relative absorption cross-section of NV- for 540 to 610 nm, and the energy of the NV- ground state of 2.6 eV below the conduction band. These results will help to further understand the photo-physics of the NV centre.Comment: 9 pages, 7 figure

Characterization of the nitrogen split interstitial defect in wurtzite aluminum nitride using density functional theory

We carried out Heyd-Scuseria-Ernzerhof hybrid density functional theory plane wave supercell calculations in wurtzite aluminum nitride in order to characterize the geometry, formation energies, transition levels and hyperfine tensors of the nitrogen split interstitial defect. The calculated hyperfine tensors may provide useful fingerprint of this defect for electron paramagnetic resonance measurement.Comment: 5 pages, 3 figure

A silicon carbide room temperature single-photon source

Over the past few years, single-photon generation has been realized in numerous systems: single molecules 1 , quantum dots 2-4 , diamond colour centres 5 and others 6 . The generation and detection of single photons play a central role in the experimental foundation of quantum mechanics 7 and measurement theory 8 . An efficient and high-quality single-photon source is needed to implement quantum key distribution, quantum repeaters and photonic quantum information processing 9 . Here we report the identification and formation of ultrabright, room-temperature, photostable single-photon sources in a device-friendly material, silicon carbide (SiC). The source is composed of an intrinsic defect, known as the carbon antisite- vacancy pair, created by carefully optimized electron irradiation and annealing of ultrapure SiC. An extreme brightness (210 6 counts s 1 ) resulting from polarization rules and a high quantum efficiency is obtained in the bulk without resorting to the use of a cavity or plasmonic structure. This may benefit future integrated quantum photonic devices 9

Structure and vibrational spectra of carbon clusters in SiC

The electronic, structural and vibrational properties of small carbon interstitial and antisite clusters are investigated by ab initio methods in 3C and 4H-SiC. The defects possess sizable dissociation energies and may be formed via condensation of carbon interstitials, e.g. generated in the course of ion implantation. All considered defect complexes possess localized vibrational modes (LVM's) well above the SiC bulk phonon spectrum. In particular, the compact antisite clusters exhibit high-frequency LVM's up to 250meV. The isotope shifts resulting from a_{13}C enrichment are analyzed. In the light of these results, the photoluminescence centers D_{II} and P-U are discussed. The dicarbon antisite is identified as a plausible key ingredient of the D_{II}-center, whereas the carbon split-interstitial is a likely origin of the P-T centers. The comparison of the calculated and observed high-frequency modes suggests that the U-center is also a carbon-antisite based defect.Comment: 15 pages, 6 figures, accepted by Phys. Rev.

EPR and theoretical studies of positively charged carbon vacancy in 4H-SiC

The carbon vacancy is a dominant defect in 4H-SiC, and the "EI5" electron-paramagnetic-resonance (EPR) spectrum originates from positively charged carbon vacancies (VC+) at quasicubic sites. The observed state for EI5, however, has been attributed to a motional-averaged state with the C3v symmetry, and its true atomic structure has not been revealed so far. We here report low temperature (<40 K) EPR measurements on EI5 and show that this center has a C1h-symmetric structure due to Jahn-Teller distortion. We also performed ab inito calculations of the hyperfine tensors for EI5, and obtained a good agreement between experiment and theory in not only their principal values but also their principal axis directions. A good agreement was also demonstrated for the EI6 center (hexagonal-site VC+) in this paper. The transition from EI5(C1h) to EI5(C3v) was found to be thermally activated and its activation energy was measured as 0.014 eV