Graphene on transition-metal dichalcogenides: a platform for proximity spin-orbit physics and optospintronics

Hybrids of graphene and two dimensional transition metal dichalcogenides (TMDC) have the potential to bring graphene spintronics to the next level. As we show here by performing first-principles calculations of graphene on monolayer MoS$_2$, there are several advantages of such hybrids over pristine graphene. First, Dirac electrons in graphene exhibit a giant global proximity spin-orbit coupling, without compromising the semimetallic character of the whole system at zero field. Remarkably, these spin-orbit effects can be very accurately described by a simple effective Hamiltonian. Second, the Fermi level can be tuned by a transverse electric field to cross the MoS$_2$ conduction band, creating a system of coupled massive and massles electron gases. Both charge and spin transport in such systems should be unique. Finally, we propose to use graphene/TMDC structures as a platform for optospintronics, in particular for optical spin injection into graphene and for studying spin transfer between TMDC and graphene.Comment: 7 pages, 6 figure

Spin relaxation mechanism in graphene: resonant scattering by magnetic impurities

It is proposed that the observed small (100 ps) spin relaxation time in graphene is due to resonant scattering by local magnetic moments. At resonances, magnetic moments behave as spin hot spots: the spin-flip scattering rates are as large as the spin-conserving ones, as long as the exchange interaction is greater than the resonance width. Smearing of the resonance peaks by the presence of electron-hole puddles gives quantitative agreement with experiment, for about 1 ppm of local moments. While the local moments can come from a variety of sources, we specifically focus on hydrogen adatoms. We perform first-principles supercell calculations and introduce an effective Hamiltonian to obtain realistic input parameters for our mechanism.Comment: 5 pages, 3 figures + Suppl. material (3 pages, 5 figures

Angular dependence of the tunneling anisotropic magnetoresistance in magnetic tunnel junctions

Based on general symmetry considerations we investigate how the dependence of the tunneling anisotropic magnetoresistance (TAMR) on the magnetization direction is determined by the specific form of the spin-orbit coupling field. By extending a phenomenological model, previously proposed for explaining the main trends of the TAMR in (001) ferromagnet/semiconductor/normal-metal magnetic tunnel junctions (MTJs) [J. Moser et al., Phys. Rev. Lett. 99, 056601 (2007)], we provide a unified qualitative description of the TAMR in MTJs with different growth directions. In particular, we predict the forms of the angular dependence of the TAMR in (001),(110), and (111) MTJs with structure inversion asymmetry and/or bulk inversion asymmetry. The effects of in-plane uniaxial strain on the TAMR are also investigated

Correlation of the angular dependence of spin-transfer torque and giant magnetoresistance in the limit of diffusive transport in spin valves

Angular variation of giant magnetoresistance and spin-transfer torque in metallic spin-valve heterostructures is analyzed theoretically in the limit of diffusive transport. It is shown that the spin-transfer torque in asymmetric spin valves can vanish in non-collinear magnetic configurations, and such a non-standard behavior of the torque is generally associated with a non-monotonic angular dependence of the giant magnetoresistance, with a global minimum at a non-collinear magnetic configuration.Comment: 4 pages, 3 figures, BRIEF REPORT

Theory of electronic and spin-orbit proximity effects in graphene on Cu(111)

We study orbital and spin-orbit proximity effects in graphene adsorbed to the Cu(111) surface by means of density functional theory (DFT). The proximity effects are caused mainly by the hybridization of graphene $\pi$ and copper d orbitals. Our electronic structure calculations agree well with the experimentally observed features. We carry out a graphene-Cu(111) distance dependent study to obtain proximity orbital and spin-orbit coupling parameters, by fitting the DFT results to a robust low energy model Hamiltonian. We find a strong distance dependence of the Rashba and intrinsic proximity induced spin-orbit coupling parameters, which are in the meV and hundreds of $\mu$eV range, respectively, for experimentally relevant distances. The Dirac spectrum of graphene also exhibits a proximity orbital gap, of about 20 meV. Furthermore, we find a band inversion within the graphene states accompanied by a reordering of spin and pseudospin states, when graphene is pressed towards copper

Current-driven destabilization of both collinear configurations in asymmetric spin-valves

Spin transfer torque in spin valves usually destabilizes one of the collinear configurations (either parallel or antiparallel) and stabilizes the second one. Apart from this, balance of the spin-transfer and damping torques can lead to steady precessional modes. In this letter we show that in some asymmetric nanopillars spin current can destabilize both parallel and antiparallel configurations. As a result, stationary precessional modes can occur at zero magnetic field. The corresponding phase diagram as well as frequencies of the precessional modes have been calculated in the framework of macrospin model. The relevant spin transfer torque has been calculated in terms of the macroscopic model based on spin diffusion equations.Comment: 4 pages, 4 figure

Resonant scattering by magnetic impurities as a model for spin relaxation in bilayer graphene

We propose that the observed spin-relaxation in bilayer graphene is due to resonant scattering by magnetic impurities. We analyze a resonant scattering model due to adatoms on both dimer and non-dimer sites, finding that only the former give narrow resonances at the charge neutrality point. Opposite to single-layer graphene, the measured spin-relaxation rate in graphene bilayer increases with carrier density. Although it has been commonly argued that a different mechanism must be at play for the two structures, our model explains this behavior rather naturally in terms of different broadening scales for the same underlying resonant processes. Not only our results---using robust and first-principles inspired parameters---agree with experiment, they also predict an experimentally testable sharp decrease of the spin-relaxation rate at high carrier densities.Comment: 6 pages, 3 figures + 2 pages Suppl. Materia