Semiconductor saturable absorber mirror structures with low saturation fluence

We present two novel semiconductor saturable absorber mirror (SESAM) designs which can exhibit more than ten times lower saturation fluence than classical SESAM devices. Design considerations and characterization data are presented. These devices are particularly suited for passively mode-locked lasers with ultra-high repetition rate

New regime of inverse saturable absorption for self-stabilizing passively mode-locked lasers

The reflectivity of a semiconductor saturable absorber mirror (SESAM) is generally expected to increase with increasing pulse energy. However, for higher pulse energies the reflectivity can decrease again; we call this a ‘roll-over' of the nonlinear reflectivity curve caused by inverse saturable absorption. We show for several SESAMs that the measured roll-over is consistent with two-photon absorption only for short (femtosecond) pulses, while a stronger (yet unidentified) kind of nonlinear absorption is dominant for longer (picosecond) pulses. These inverse saturable absorption effects have important technological consequences, e.g. for the Q-switching dynamics of passively mode-locked lasers. A simple equation using only measurable SESAM parameters and including inverse saturable absorption is derived for the Q-switched mode-locking threshold. We present various data and discuss the sometimes detrimental effects of this roll-over for femtosecond high repetition rate lasers, as well as the potentially very useful consequences for passively mode-locked multi-GHz lasers. We also discuss strategies to enhance or reduce this induced absorption by using different SESAM designs or semiconductor material

Vertical integration of ultrafast semiconductor lasers

Lasers generating short pulses - referred to as ultrafast lasers - enable many applications in science and technology. Numerous laboratory experiments have confirmed that ultrafast lasers can significantly increase telecommunication data rates [1], improve computer interconnects, and optically clock microprocessors [2, 3]. New applications in metrology [4], supercontinuum generation [5], and life sciences with two-photon microscopy [6] only work with ultrashort pulses but have relied on bulky and complex ultrafast solid-state lasers. Semiconductor lasers are ideally suited for mass production and widespread applications, because they are based on a wafer-scale technology with a high level of integration. Not surprisingly, the first lasers entering virtually every household were semiconductor lasers in compact disk players. Here we introduce a new concept and make the first feasibility demonstration of a new class of ultrafast semiconductor lasers which are power scalable, support both optical and electrical pumping and allow for wafer-scale fabrication. The laser beam propagates vertically (perpendicularly) through the epitaxial layer structure which has both gain and absorber layers integrated. In contrast to edge-emitters, these lasers have semiconductor layers that can be optimized separately by using different growth parameters and with no regrowth. This is especially important to integrate the gain and absorber layers, which require different quantum confinement. A saturable absorber is required for pulse generation and we optimized its parameters with a single self-assembled InAs quantum dot layer at low growth temperatures. We refer to this class of devices as modelocked integrated external-cavity surface emitting lasers (MIXSEL). Vertical integration supports a diffraction-limited circular output beam, transform-limited pulses, lower timing jitter, and synchronization to an external electronic clock. The pulse repetition rate scales from 1-GHz to 100-GHz by simply changing the laser cavity length. This result holds promise for semiconductor-based high-volume wafer-scale fabrication of compact, ultrafast laser

Modelocked quantum dot vertical external cavity surface emitting laser

We report the first successful modelocking of a vertical external cavity surface emitting laser (VECSEL) with a quantum dot (QD) gain region. The VECSEL has a total of 35 QD-layers with an emission wavelength of about 1060 nm. In SESAM modelocked operation, we obtain an average output power of 27.4 mW with 18-ps pulses at a repetition rate of 2.57 GHz. This QD-VECSEL is used as-grown on a 450 μm thick substrate, which limits the average output powe

New Particles Working Group Report of the Snowmass 2013 Community Summer Study

This report summarizes the work of the Energy Frontier New Physics working group of the 2013 Community Summer Study (Snowmass)

High-power ultrafast thin disk laser oscillators and their potential for sub-100-femtosecond pulse generation

Ultrafast thin disk laser oscillators achieve the highest average output powers and pulse energies of any mode-locked laser oscillator technology. The thin disk concept avoids thermal problems occurring in conventional high-power rod or slab lasers and enables high-power TEM00 operation with broadband gain materials. Stable and self-starting passive pulse formation is achieved with semiconductor saturable absorber mirrors (SESAMs). The key components of ultrafast thin disk lasers, such as gain material, SESAM, and dispersive cavity mirrors, are all used in reflection. This is an advantage for the generation of ultrashort pulses with excellent temporal, spectral, and spatial properties because the pulses are not affected by large nonlinearities in the oscillator. Output powers close to 100W and pulse energies above 10μJ are directly obtained without any additional amplification, which makes these lasers interesting for a growing number of industrial and scientific applications such as material processing or driving experiments in high-field science. Ultrafast thin disk lasers are based on a power-scalable concept, and substantially higher power levels appear feasible. However, both the highest power levels and pulse energies are currently only achieved with Yb:YAG as the gain material, which limits the gain bandwidth and therefore the achievable pulse duration to 700 to 800fs in efficient thin disk operation. Other Yb-doped gain materials exhibit a larger gain bandwidth and support shorter pulse durations. It is important to evaluate their suitability for power scaling in the thin disk laser geometry. In this paper, we review the development of ultrafast thin disk lasers with shorter pulse durations. We discuss the requirements on the gain materials and compare different Yb-doped host materials. The recently developed sesquioxide materials are particularly promising as they enabled the highest optical-to-optical efficiency (43%) and shortest pulse duration (227fs) ever achieved with a mode-locked thin disk lase

b-Jet Identification in the D0 Experiment

Algorithms distinguishing jets originating from b quarks from other jet flavors are important tools in the physics program of the D0 experiment at the Fermilab Tevatron p-pbar collider. This article describes the methods that have been used to identify b-quark jets, exploiting in particular the long lifetimes of b-flavored hadrons, and the calibration of the performance of these algorithms based on collider data.Comment: submitted to Nuclear Instruments and Methods in Physics Research

Measurement of the ttbar Production Cross Section in ppbar Collisions at sqrt(s)=1.96 TeV using Lepton + Jets Events with Lifetime b-tagging

We present a measurement of the top quark pair ($t\bar{t}$) production cross section ($\sigma_{t\bar{t}}$) in $p\bar{p}$ collisions at $\sqrt{s}=1.96$ TeV using 230 pb$^{-1}$ of data collected by the D0 experiment at the Fermilab Tevatron Collider. We select events with one charged lepton (electron or muon), missing transverse energy, and jets in the final state. We employ lifetime-based b-jet identification techniques to further enhance the $t\bar{t}$ purity of the selected sample. For a top quark mass of 175 GeV, we measure $\sigma_{t\bar{t}}=8.6^{+1.6}_{-1.5}(stat.+syst.)\pm 0.6(lumi.)$ pb, in agreement with the standard model expectation.Comment: 7 pages, 2 figures, 3 tables Submitted to Phys.Rev.Let