29Si Hyperfine Structure of the E'_\alpha Center in Amorphous Silicon Dioxide

We report a study by electron paramagnetic resonance (EPR) on the E'_\alpha point defect in amorphous silicon dioxide (a-SiO2). Our experiments were performed on gamma-ray irradiated oxygen-deficient materials and pointed out that the 29Si hyperfine structure of the E'_alpha consists in a pair of lines split by 49 mT. On the basis of the experimental results a microscopic model is proposed for the E'_alpha center, consisting in a hole trapped in an oxygen vacancy with the unpaired electron sp3 orbital pointing away from the vacancy in a back-projected configuration and interacting with an extra oxygen atom of the a-SiO2 matrix.Comment: 4 page

Online fabrication and characterization of capsule populations with a flow-focusing microfluidic system

This paper was presented at the 3rd Micro and Nano Flows Conference (MNF2011), which was held at the Makedonia Palace Hotel, Thessaloniki in Greece. The conference was organised by Brunel University and supported by the Italian Union of Thermofluiddynamics, Aristotle University of Thessaloniki, University of Thessaly, IPEM, the Process Intensification Network, the Institution of Mechanical Engineers, the Heat Transfer Society, HEXAG - the Heat Exchange Action Group, and the Energy Institute.We have designed a microfluidic system that combines a double flow-focusing setup for calibrated capsule fabrication with a microchannel for the characterization of their mechanical properties. The double flow-focusing system consists of a first Y junction to create the microdroplets and of a second Y junction to introduce the cross-linking agent allowing the membrane formation. The human serum albumin (HSA) aqueous solution for the dispersed solution, hydrophobic phase for the continuous solution and cross-linking agent solution are introduced by means of syringe pumps. A wavy channel after the second junction allows to control the reticulation time. A cylindrical microchannel then enables to deform and characterize the capsules formed. The mechanical properties of the capsule membrane are obtained by inverse analysis (Chu et al. 2011). The results show that the drop size increases with the flow rate ratio between the central and lateral channels and does not change much regardless of the flow rate of the reticulation phase. The mean shear modulus of the capsules fabricated after 23 s of reticulation is of the order of the surface tension of HSA solution with Dragoxat indicating that the reticulation time is too short to form an elastic membrane around the droplet. When the reticulation time is increased to 60 s, the membrane shear modulus is multiplied by a factor of 3 confirming that a solid membrane has formed around the drop

Structural relaxation of E' gamma centers in amorphous silica

We report experimental evidence of the existence of two variants of the E' gamma centers induced in silica by gamma rays at room temperature. The two variants are distinguishable by the fine features of their line shapes in paramagnetic resonance spectra. These features suggest that the two E' gamma differ for their topology. We find a thermally induced interconversion between the centers with an activation energy of about 34 meV. Hints are also found for the existence of a structural configuration of minimum energy and of a metastable state.Comment: 4 pages, 2 figures, submitted to Phys. Rev. Let

The use of high aspect ratio photoresist (SU-8) for super-hydrophobic pattern prototyping

In this work we present a reliable technique for the production of large areas of high aspect-ratio patterns and describe their use as model super-hydrophobic systems. The high thickness and straight sidewalls possible with SU-8 were used to generate dense patterns of small pillars. These photoresist patterns could be used directly, without the need for micromoulding. A method is given allowing resist thickness to be varied over a wide range and a bottom antireflective layer was used to simplify patterning on reflective substrates. This patterning technique allows rapid testing of wetting theories, as pattern size and depth can be varied simply and samples can be produced in sufficient numbers for laboratory use. We show how the static contact angle of water varies with pattern height for one sample-pattern and how static and dynamic contact angles vary with dimension using high aspect-ratio patterns

An optical fibre rereadable radiation dosimeter for use at high doses and at elevated temperature

A new type of radiation dosimeter for large radiation doses is described, which is based on silica fibre material. Conventional radioluminescence or thermoluminescence of silica produces emission in the blue region of the spectrum. However, in this new material irradiation, in conjunction with a heat treatment, generates a green emission band. The intensity of the green band can be monitored by either radioluminescence or thermoluminescence using a test dose. The signals are directly related to the total irradiation history of the material. The dosimeter is therefore rereadable. The production mechanism of the green emission centre requires a thermal processing stage, with an activation energy of 0.52 eV. Further, the dosimeter is effective at recording radiation during high-temperature exposure, to at least 400°C, with the subsequent dosimetry being performed below 200°C

Proof of the thermodynamical stability of the E' center in SiO2

The E' center is a paradigmatic radiation-induced defect in SiO2 whose peculiar EPR and hyperfine activity has been known since over 40 years. This center has been traditionally identified with a distorted, positively-charged oxygen vacancy V_O+. However, no direct proof of the stability of this defect has ever been provided, so that its identification is still strongly incomplete. Here we prove directly that distorted V_O+ is metastable and that it satisfies the key requirements for its identification as E', such as thermal and optical response, and activation-deactivation mechanisms.Comment: RevTeX 4 pages, 2 figure

Luminescence spectra of germanosilicate optical fibres I - radioluminescence and cathodoluminescence

Data are reported on the luminescence spectra generated by X-ray and electron irradiation of optical fibres, fibre preforms and silica. The impurities and imperfections in the fibre core have a higher luminescence efficiency than those in the substrate material. The core luminescence provides a major fraction of the total light emission, despite the fact that the core is a small fraction of the total fibre volume. A wide variety of overlapping emission bands are reported. The spectra are strongly temperature dependent but the component emission bands can generally be linked to either Ge impurities, giving the 400 nm band, exciton emission near 460 nm or other blue/UV bands linked to E'-type defects. Overall, the study of the fibre luminescence provides a sensitive technique for analysis d changes and repeatability of fibre fabrication

The electronic structure of amorphous silica: A numerical study

We present a computational study of the electronic properties of amorphous SiO2. The ionic configurations used are the ones generated by an earlier molecular dynamics simulations in which the system was cooled with different cooling rates from the liquid state to a glass, thus giving access to glass-like configurations with different degrees of disorder [Phys. Rev. B 54, 15808 (1996)]. The electronic structure is described by a tight-binding Hamiltonian. We study the influence of the degree of disorder on the density of states, the localization properties, the optical absorption, the nature of defects within the mobility gap, and on the fluctuations of the Madelung potential, where the disorder manifests itself most prominently. The experimentally observed mismatch between a photoconductivity threshold of 9 eV and the onset of the optical absorption around 7 eV is interpreted by the picture of eigenstates localized by potential energy fluctuations in a mobility gap of approximately 9 eV and a density of states that exhibits valence and conduction band tails which are, even in the absence of defects, deeply located within the former band gap.Comment: 21 pages of Latex, 5 eps figure