Suppression of axial growth by boron incorporation in GaAs nanowires grown by self-catalyzed molecular beam epitaxy

The addition of boron to GaAs nanowires grown by self-catalyzed molecular beam epitaxy was found to have a strong effect on the nanowire morphology, with axial growth greatly reduced as the nominal boron concentration was increased. Transmission electron microscopy measurements show that the Ga catalyst droplet was unintentionally consumed during growth. Concurrent radial growth, a rough surface morphology and tapering of nanowires grown under boron flux suggest that this droplet consumption is due to reduced Ga adatom diffusion on the nanowire sidewalls in the presence of boron. Modelling of the nanowire growth puts the diffusion length of Ga adatoms under boron flux at around 700-1000nm. Analyses of the nanowire surfaces show regions of high boron concentration, indicating the surfactant nature of boron in GaAs

In vivo imaging enables high resolution preclinical trials on patients' leukemia cells growing in mice.

Xenograft mouse models represent helpful tools for preclinical studies on human tumors. For modeling the complexity of the human disease, primary tumor cells are by far superior to established cell lines. As qualified exemplary model, patients' acute lymphoblastic leukemia cells reliably engraft in mice inducing orthotopic disseminated leukemia closely resembling the disease in men. Unfortunately, disease monitoring of acute lymphoblastic leukemia in mice is hampered by lack of a suitable readout parameter

Untertage-Aufnahme und anschließende Demokratisierung von terrestrischen Laserscandaten

Bereits seit Längerem wird das terrestrische Laser Scanning zur Vermessung von über- und unterirdischen Bauwerken eingesetzt. Die Forderung nach einer detaillierten digitalen 3D-Dokumentation erfordert geeignete Methoden, die eine möglichst hohe geometrische Auflösung bei entsprechend effizienten Aufnahmeverfahren ermöglichen. Gerade die Bedingungen unter Tage stellen große Herausforderungen an die Aufnahme: Obwohl viele Scanpositionen aufgenommen werden müssen, spielt der Zeitaufwand für die Abwicklung des gesamten Scanprojekts eine große Rolle. Obwohl keine GNSS (Global Navigation Satellite System)-Messungen möglich sind, sind die Anforderungen an die Robustheit des „Workflows“ und an die Genauigkeit des Gesamtprojekts hoch. Auf der einen Seite sollen große und komplexe 3D-Daten möglichst lückenfrei und komplett aufgenommen, auf der anderen Seite sollen die Ergebnisse dann aber auch möglichst vielen Anwendern flüssig und intuitiv bedienbar zur Verfügung stehen. In vielen Details wurde gerade in den letzten Jahren der gesamte Aufnahme- und Auswerteprozess beschleunigt und verbessert: Die Laserscanner messen mit „Millimeter-Genauigkeit“, es können dutzende hochauflösende Scans pro Stunde aufgenommen werden, die Scanpositionen werden auch ohne GNSS-Information automatisch zueinander registriert und eine Ausgleichsrechnung kann abschließend einen Fehlerreport des gesamten Vermessungsprojektes liefern. Diese Arbeit soll sowohl den gesamten „Vermessungs-Workflow“ beschreiben, als auch eine neue Methode aufzeigen, ein Scanprojekt mehreren Institutionen gleichzeitig zugänglich zu machen. Alle Scans eines Projektes können speicheroptimiert im Intranet oder im Internet als ein sogenanntes „RiPANO“-Projekt gespeichert werden. Die Navigation zwischen einzelnen Scanpositionen erfolgt intuitiv, rasch und übersichtlich. Mehrere Benutzer können dann gleichzeitig darauf zugreifen und die Daten so vorbereiten, dass daraus CAD-(Bestands-)Pläne erstellt werden können.For some time now, terrestrial laser scanning has been used for surveying above and below ground structures. The demand for detailed digital 3D documentation requires suitable methods that allow the highest possible geometric resolution with correspondingly efficient recording methods. The underground conditions in particular pose great challenges for the recording: although many scan positions have to be recorded, the time required to complete an entire scan project plays an important role. Although no GNSS (global navigation satellite system) measurements are possible, the demands on the robustness of the registration and the accuracy of the overall project are high. On the one hand, large and complex 3D data should be recorded as gap-free and complete as possible, on the other hand, the results should be made available to as many users as possible in a fluent and easy to use way

Effects of Alloying Elements on Surface Oxides of Hot-Dip Galvanized Press Hardened Steel

Effects of steel alloying elements on the formation of the surface oxide layer of hot-dip galvanized press hardened steel after austenitization annealing were examined with various advanced microscopy and spectroscopy techniques. The main oxides on top of the original thin Al2O3 layer, originating from the primary galvanizing process, are identified as ZnO and (Mn,Zn)Mn2O4 spinel. For some of the investigated steel alloys, a non-uniform, several nanometer thick Cr enriched, additional film was found at the Al2O3 layer. At a sufficiently high concentration, Cr can act as a substitute for Al during annealing, strengthening and regenerating the original Al2O3 layer with Cr2O3. Further analysis with secondary ion mass spectrometry allowed a reliable distinction between ZnO and Zn(OH)2

Efficient room-temperature light-emitters based on partly amorphised Ge quantum dots in crystalline Si

Semiconductor light emitters compatible with standard Si integration technology (SIT) are of particular interest for overcoming limitations in the operating speed of microelectronic devices 1-3. Light sources based on group-IV elements would be SIT compatible but suffer from the poor optoelectronic properties of bulk Si and Ge. Here, we demonstrate that epitaxially grown Ge quantum dots (QDs) in a fully coherent Si matrix show extraordinary optical properties if partially amorphised by Ge-ion bombardment (GIB). The GIB-QDs exhibit a quasi-direct-band gap and show, in contrast to conventional SiGe nanostructures, almost no thermal quenching of the photoluminescence (PL) up to room-temperature (RT). Microdisk resonators with embedded GIB-QDs exhibit threshold-behaviour and super-linear increase of the integrated PL-intensity (IPL) with increasing excitation power Pexc which indicates light amplification by stimulated emission in a fully SIT-compatible group-IV nano-system

Out-of-Plane Magnetic Anisotropy in Ordered Ensembles of Fey_yN Nanocrystals Embedded in GaN

Phase-separated semiconductors containing magnetic nanostructures are relevant systems for the realization of high-density recording media. Here, the controlled strain engineering of Ga$\delta$FeN layers with Fe$_y$N embedded nanocrystals (NCs) \textit{via} Al$_x$Ga$_{1-x}$N buffers with different Al concentration $0<x_\mathrm{Al}<41$\% is presented. Through the addition of Al to the buffer, the formation of predominantly prolate-shaped $\varepsilon$-Fe$_3$N NCs takes place. Already at an Al concentration $x_\mathrm{Al}$\,$\approx$\,5\% the structural properties---phase, shape, orientation---as well as the spatial distribution of the embedded NCs are modified in comparison to those grown on a GaN buffer. Although the magnetic easy axis of the cubic $\gamma$'-Ga$_y$Fe$_{4-y}$N nanocrystals in the layer on the $x_\mathrm{Al} = 0\%$ buffer lies in-plane, the easy axis of the $\varepsilon$-Fe$_3$N NCs in all samples with Al$_x$Ga$_{1-x}$N buffers coincides with the $[0001]$ growth direction, leading to a sizeable out-of-plane magnetic anisotropy and opening wide perspectives for perpendicular recording based on nitride-based magnetic nanocrystals.Comment: 29 pages, 10 figures, submitte