Initial stages of Pt growth on Ge(001) studied by scanning tunneling microscopy and density functional theory

We have studied the initial stages of submonolayer Pt growth on the Ge(001). We have observed several stable and meta-stable adsorption configurations of Pt atoms at various temperatures. Calculations indicate relatively high binding energies of Pt atoms onto the Ge lattice, at different adsorption sites. Our results show that through-the-substrate bonding (concerted bonding) of two Pt atoms is more favored on Ge(001) surface then a direct Pt-Pt bond. Both our experiments and calculations indicate the breaking of Ge-Ge bonds on the surface in the vicinity of Pt adsorbates. We have also observed the spontaneous generation of 2 + 1 dimer vacancy defects at room temperature that cause the ejection of Ge atoms onto the surface. Finally we have studied the diffusion of Pt atoms into the bulk as a result of annealing and found out that they get trapped at subsurface sites

Electronic structure of the c(4 x 2) reconstructed Ge(001) surface

We investigate the electronic structure of the c(4 x 2) reconstructed Ge(001) surface using band structure calculations based on density functional theory and the generalized gradient approximation. In particular, we take into account the details of surface reconstruction by means of well relaxed crystal structures. The surface electronic states are identified and the local density of states is compared to recent data from scanning tunneling spectroscopy. We obtain almost perfect agreement between theory and experiment for both the occupied and unoccupied states, which allows us to clarify the interpretation of the experimental data.Comment: 4 pages, 3 figures, accepted by Chem. Phys. Let

High resolution scanning tunneling spectroscopy of ultrathin Pb on Si(111)-(6x6) substrate

The electronic structure of Si(111)-(6x6)Au surface covered with submonolayer amount of Pb is investigated using scanning tunneling spectroscopy. Already in small islands of Pb with thickness of 1 ML Pb$_{(111)}$ and with the diameter of only about 2 nm we detected the quantized electronic state with energy 0.55 eV below the Fermi level. Similarly, the I(V) characteristics made for the Si(111)-(6x6)Au surface reveal a localized energy state 0.3 eV below the Fermi level. These energies result from fitting of the theoretical curves to the experimental data. The calculations are based on tight binding Hubbard model. The theoretical calculations clearly show prominent modification of the I(V) curve due to variation of electronic and topographic properties of the STM tip apex.Comment: 7 pages, 7 figures, accepted for publication in Surface Scienc

Donor-acceptor pair recombination in AgIn5S8 single crystals

Cataloged from PDF version of article.Photoluminescence (PL) spectra of AgIn5S8 single crystals were investigated in the 1.44-1.91 eV energy region and in the 10-170 K temperature range. The PL band was observed to be centered at 1.65 eV at 10 K and an excitation intensity of 0.97 W cm(-2). The redshift of this band with increasing temperature and with decreasing excitation intensity was observed. To explain the observed PL behavior, we propose that the emission is due to radiative recombination of a donor-acceptor pair, with an electron occupying a donor level located at 0.06 eV below the conduction band, and a hole occupying an acceptor level located at 0.32 eV above the valence band. (C) 1999 American Institute of Physics

Controlled damaging and repair of self-organized nanostructures by atom manipulation at room temperature

The possibility of controlled local demolition and repair of the recently discovered self-organized Pt nanowires on Ge(001) surfaces has been explored. These nanowires are composed of Pt dimers, which are found to be rather weakly bound to the underlying substrate. Using this property, we demonstrate the possibility of carrying the constituting dimers of the Pt nanowires from point to point with atomic precision at room temperature. Pt dimers can be picked-up in two configurations: (i) a horizontal configuration at the tip apex, resulting in double tip images and (ii) a configuration where the Pt dimer is attached to the side of the tip apex, resulting in well-defined atomically resolved images

Confined Ge-Pt states in self-organized Pt nanowire arrays on Ge(001)

By means of band structure calculations within the density functional theory and the generalized gradient approximation, we investigate the electronic structure of self-organized Pt nanowires on the Ge(001) surface. In particular, we deal with a novel one-dimensional surface state confined in the nanowire array and clarify its origin. Due to large Pt contributions, the novel state is rather a mixed Ge-Pt hybrid state than a confined Ge surface state. Moreover, we compare our results to data from scanning tunneling microscopy.Comment: 3 pages, 3 figures, accepted by Eur. Phys. J.

Initial stages of Pt growth on Ge(001) studied by scanning tunneling microscopy and density functional theory

We have studied the initial stages of submonolayer Pt growth on the Ge(001). We have observed several stable and meta-stable adsorption configurations of Pt atoms at various temperatures. Calculations indicate relatively high binding energies of Pt atoms onto the Ge lattice, at different adsorption sites. Our results show that through-the-substrate bonding (concerted bonding) of two Pt atoms is more favored on Ge(001) surface then a direct Pt-Pt bond. Both our experiments and calculations indicate the breaking of Ge-Ge bonds on the surface in the vicinity of Pt adsorbates. We have also observed the spontaneous generation of 2 + 1 dimer vacancy defects at room temperature that cause the ejection of Ge atoms onto the surface. Finally we have studied the diffusion of Pt atoms into the bulk as a result of annealing and found out that they get trapped at subsurface sites