A Class-AB 1.65GHz-2GHz Broadband CMOS Medium Power Amplifier

In this paper a single stage broadband CMOS RF power amplifier is presented. The power amplifier is fabricated in a 0:25¹m CMOS process. Measurements with a 2:5V supply voltage show an output power of 18:5 dBm with an associated PAE of 16% at the 1-dB compression point. The measured gain is 5.1 § 0:5 dB from 1.65 to 2 GHz. Simulated and measured results agree reasonably well

850/900/1800/1900MHz Quad-Band CMOS Medium Power Amplifier

This paper presents a two-stage quad-band CMOS RF power amplifier. The power amplifier is fabricated in a 0.25 mum CMOS process. The measured 1-dB compression point between 800 and 900 MHz is 15 dBm plusmn 0.2 dB with maximum 18% PAE, and between 1800 and 1900MHz is 17.5dBm plusmn 0.7dB with maximum 17% PAE. The measured gains in the two bands are 23.6 dB plusmn 0.7 dB and 13 dB plusmn 2.1 dB, respectively