Electron spin relaxation in bulk GaAs for doping densities close to the metal-to-insulator transition

We have measured the electron spin relaxation rate and the integrated spin noise power in n-doped GaAs for temperatures between 4 K and 80 K and for doping concentrations ranging from 2.7 x 10^{-15} cm^{-3} to 8.8 x 10^{-16} cm^{-3} using spin noise spectroscopy. The temperature dependent measurements show a clear transition from localized to free electrons for the lower doped samples and confirm mainly free electrons at all temperatures for the highest doped sample. While the sample at the metal-insulator-transition shows the longest spin relaxation time at low temperatures, a clear crossing of the spin relaxation rates is observed at 70 K and the highest doped sample reveals the longest spin relaxation time above 70 K.Comment: 6 pages, 4 figure

Relation among concentrations of incorporated Mn atoms, ionized Mn acceptors, and holes in p-(Ga,Mn)As epilayers

The amount of ionized Mn acceptors in various p-type Mn-doped GaAs epilayers has been evaluated by electrochemical capacitance-voltage measurements, and has been compared systematically with concentrations of incorporated Mn atoms and holes for wide range of Mn concentration (10^17 ~ 10^21 cm^-3). Quantitative assessment of anomalous Hall effect at room temperature is also carried out for the first time.Comment: 8 pages, 4 figures, tabl

Spectroscopic determination of hole density in the ferromagnetic semiconductor Ga1−x_{1-x}Mnx_{x}As

The measurement of the hole density in the ferromagnetic semiconductor Ga$_{1-x}$Mn$_{x}$As is notoriously difficult using standard transport techniques due to the dominance of the anomalous Hall effect. Here, we report the first spectroscopic measurement of the hole density in four Ga$_{1-x}$Mn$_{x}$As samples ($x=0, 0.038, 0.061, 0.083$) at room temperature using Raman scattering intensity analysis of the coupled plasmon-LO-phonon mode and the unscreened LO phonon. The unscreened LO phonon frequency linearly decreases as the Mn concentration increases up to 8.3%. The hole density determined from the Raman scattering shows a monotonic increase with increasing $x$ for $x\leq0.083$, exhibiting a direct correlation to the observed $T_c$. The optical technique reported here provides an unambiguous means of determining the hole density in this important new class of ``spintronic'' semiconductor materials.Comment: two-column format 5 pages, 4 figures, to appear in Physical Review

Local biases drive, but do not determine, the perception of illusory trajectories

When a dot moves horizontally across a set of tilted lines of alternating orientations, the dot appears to be moving up and down along its trajectory. This perceptual phenomenon, known as the slalom illusion, reveals a mismatch between the veridical motion signals and the subjective percept of the motion trajectory, which has not been comprehensively explained. In the present study, we investigated the empirical boundaries of the slalom illusion using psychophysical methods. The phenomenon was found to occur both under conditions of smooth pursuit eye movements and constant fixation, and to be consistently amplified by intermittently occluding the dot trajectory. When the motion direction of the dot was not constant, however, the stimulus display did not elicit the expected illusory percept. These findings confirm that a local bias towards perpendicularity at the intersection points between the dot trajectory and the tilted lines cause the illusion, but also highlight that higher-level cortical processes are involved in interpreting and amplifying the biased local motion signals into a global illusion of trajectory perception

Plasmon attenuation and optical conductivity of a two-dimensional electron gas

In a ballistic two-dimensional electron gas, the Landau damping does not lead to plasmon attenuation in a broad interval of wave vectors q << k_F. Similarly, it does not contribute to the optical conductivity \sigma (\omega, q) in a wide domain of its arguments, E_F > \omega > qv_F, where E_F, k_F and v_F are, respectively, the Fermi energy, wavevector and velocity of the electrons. We identify processes that result in the plasmon attenuation in the absence of Landau damping. These processes are: the excitation of two electron-hole pairs, phonon-assisted excitation of one pair, and a direct plasmon-phonon conversion. We evaluate the corresponding contributions to the plasmon linewidth and to the optical conductivity.Comment: 8 pages, 4 figures; final form, misprints correcte

CaB_6: a new semiconducting material for spin electronics

Ferromagnetism was recently observed at unexpectedly high temperatures in La-doped CaB_6. The starting point of all theoretical proposals to explain this observation is a semimetallic electronic structure calculated for CaB_6 within the local density approximation. Here we report the results of parameter-free quasiparticle calculations of the single-particle excitation spectrum which show that CaB_6 is not a semimetal but a semiconductor with a band gap of 0.8 eV. Magnetism in La_xCa_{1-x}B_6 occurs just on the metallic side of a Mott transition in the La-induced impurity band.Comment: 4 pages, 1 postscript figur

On the Energy Transfer Performance of Mechanical Nanoresonators Coupled with Electromagnetic Fields

We study the energy transfer performance in electrically and magnetically coupled mechanical nanoresonators. Using the resonant scattering theory, we show that magnetically coupled resonators can achieve the same energy transfer performance as for their electrically coupled counterparts, or even outperform them within the scale of interest. Magnetic and electric coupling are compared in the Nanotube Radio, a realistic example of a nano-scale mechanical resonator. The energy transfer performance is also discussed for a newly proposed bio-nanoresonator composed of a magnetosomes coated with a net of protein fibers.Comment: 9 Pages, 3 Figure

Observation of the spin-charge thermal isolation of ferromagnetic Ga_{0.94}Mn_{0.06}As by time-resolved magneto-optical measurement

The dynamics of magnetization under femtosecond optical excitation is studied in a ferromagnetic semiconductor Ga_{0.94}Mn_{0.06}As with a time-resolved magneto-optical Kerr effect measurement with two color probe beams. The transient reflectivity change indicates the rapid rise of the carrier temperature and relaxation to a quasi-thermal equilibrium within 1 ps, while a very slow rise of the spin temperature of the order of 500ps is observed. This anomalous behavior originates from the thermal isolation between the charge and spin systems due to the spin polarization of carriers (holes) contributing to ferromagnetism. This constitutes experimental proof of the half-metallic nature of ferromagnetic Ga_{0.94}Mn_{0.06}As arising from double exchange type mechanism originates from the d-band character of holes

Magnetoconductivity of quantum wires with elastic and inelastic scattering

We use a Boltzmann equation to determine the magnetoconductivity of quantum wires. The presence of a confining potential in addition to the magnetic field removes the degeneracy of the Landau levels and allows one to associate a group velocity with each single-particle state. The distribution function describing the occupation of these single-particle states satisfies a Boltzmann equation, which may be solved exactly in the case of impurity scattering. In the case where the electrons scatter against both phonons and impurities we solve numerically - and in certain limits analytically - the integral equation for the distribution function, and determine the conductivity as a function of temperature and magnetic field. The magnetoconductivity exhibits a maximum at a temperature, which depends on the relative strength of the impurity and electron-phonon scattering, and shows oscillations when the Fermi energy or the magnetic field is varied.Comment: 21 pages (revtex 3.0), 5 postscript figures available upon request at [email protected] or [email protected]

Development of a model-based clinical sepsis biomarker for critically ill patients

Invited. online 15 May 2010.Sepsis occurs frequently in the intensive care unit (ICU) and is a leading cause of admission, mortality, and cost. Treatment guidelines recommend early intervention, however positive blood culture results may take up to 48 h. Insulin sensitivity (SI) is known to decrease with worsening condition and could thus be used to aid diagnosis. Some glycemic control protocols are able to accurately identify insulin sensitivity in real-time. Hourly model-based insulin sensitivity SI values were calculated from glycemic control data of 36 patients with sepsis. The hourly SI is compared to the hourly sepsis score (ss) for these patients (ss = 0–4 for increasing severity). A multivariate clinical biomarker was also developed to maximize the discrimination between different ss groups. Receiver operator characteristic (ROC) curves for severe sepsis (ss=2) are created for both SI and the multivariate clinical biomarker. Insulin sensitivity as a sepsis biomarker for diagnosis of severe sepsis achieves a 50% sensitivity, 76% specificity, 4.8% positive predictive value (PPV), and 98.3% negative predictive value (NPV) at an SI cut-off value of 0.00013 L/mU/min. Multivariate clinical biomarker combining SI, temperature, heart rate, respiratory rate, blood pressure, and their respective hourly rates of change achieves 73% sensitivity, 80% specificity, 8.4% PPV, and 99.2% NPV. Thus, themultivariate clinical biomarker provides an effective real-time negative predictive diagnostic for severe sepsis. Examination of both inter- and intra-patient statistical distribution of this biomarker and sepsis score shows potential avenues to improve the positive predictive value