Faces, Edges, Vertices of Some Polyhedra

A proof that: for any given polyhedron so shaped that every closed non-self intersecting broken line composed of edges of the polyhedron divides the surface of the polyhedron into precisely two disjoint regions each of which is bounded by the closed broken line, v - e + f = 2, where v is the number of vertices of the polyhedron, e the number of edges and f the number of faces

Nutation versus angular dependent NQR spectroscopy and the impact of underdoping on charge inhomogeneities in YBa2_2Cu3_3Oy_y

We describe two different nuclear quadrupole resonance (NQR) based techniques, designed to measure the local asymmetry of the internal electric field gradient, and the tilt angle of the main NQR principal axis z from the crystallographic axis c. These techniques use the dependence of the NQR signal on the duration of the radio frequency (rf) pulse and on the direction of the rf field H1 with respect to the crystal axis. The techniques are applied to oriented powder of YBa$_{2}$Cu$$O$_{y}$ fully enriched with 63Cu. Measurements were performed at different frequencies, corresponding to different in-plane copper sites with respect to the dopant. Combining the results from both techniques, we conclude that oxygen deficiency in the chain layer lead to a rotation of the NQR main principal axis at the nearby Cu on the CuO2 planes by 20+-degrees. This occurs with no change to the asymmetry. The axis rotation associated with oxygen deficiency means that there must be electric field inhomogeneities in the CuO2 planes only in the vicinity of the missing oxygen.Comment: 9 pages, 10 figure

Research on digital transducer principles. Volume 10 - Thin film titanium dioxide by chemical vapor deposition, 1 July - 31 December 1968

Thin film titanium dioxide by high temperature vapor depositio

Room-Temperature Continuous-Wave Vertical-Cavity Single-Quantum-Well Microlaser Diodes

Room-temperature continuous and pulsed lasing of vertical-cavity, single-quantum-well, surface-emitting microlasers is achieved at ~983nm. The active Ga[sub][0-8]In[sub][0-2]As single quantum well is 100 [angstroms] thick. These microlasers have the smallest gain medium volumes among lasers ever built. The entire laser structure is grown by molecular beam epitaxy and the microlasers are formed by chemically assisted ion-beam etching. The microlasers are 3-50-μm across. The minimum threshold currents are 1.1 mA (pulsed) and 1.5 mA (CW)

Ultranarrow conducting channels defined in GaAs-AlGaAs by low-energy ion damage

We have laterally patterned the narrowest conducting wires of two-dimensional electron gas (2DEG) material reported to date. The depletion induced by low-energy ion etching of GaAs-AlGaAs 2DEG structures was used to define narrow conducting channels. We employed high voltage electron beam lithography to create a range of channel geometries with widths as small as 75 nm. Using ion beam assisted etching by Cl2 gas and Ar ions with energies as low as 150 eV, conducting channels were defined by etching only through the thin GaAs cap layer. This slight etching is sufficient to entirely deplete the underlying material without necessitating exposure of the sidewalls that results in long lateral depletion lengths. At 4.2 K, without illumination, our narrowest wires retain a carrier density and mobility at least as high as that of the bulk 2DEG and exhibit quantized Hall effects. Aharonov–Bohm oscillations are seen in rings defined by this controlled etch-damage patterning. This patterning technique holds promise for creating one-dimensional conducting wires of even smaller sizes

The extraordinary Hall effect in coherent epitaxial tau (Mn,Ni)Al thin films on GaAs

Ultrathin coherent epitaxial films of ferromagnetic tau(Mn,Ni)0.60Al0.40 have been grown by molecular beam epitaxy on GaAs substrates. X-ray scattering and cross-sectional transmission electron microscopy measurements confirm that the c axis of the tetragonal tau unit cell is aligned normal to the (001) GaAs substrate. Measurements of the extraordinary Hall effect (EHE) show that the films are perpendicularly magnetized, exhibiting EHE resistivities saturating in the range of 3.3-7.1 muOMEGA-cm at room temperature. These values of EHE resistivity correspond to signals as large as +7 and -7 mV for the two magnetic states of the film with a measurement current of 1 mA. Switching between the two magnetic states is found to occur at distinct field values that depend on the previously applied maximum field. These observations suggest that the films are magnetically uniform. As such, tau(Mn,Ni)Al films may be an excellent medium for high-density storage of binary information

Non-Volatile Memory Characteristics of Submicrometre Hall Structures Fabricated in Epitaxial Ferromagnetic MnAl Films on GaAs

Hall-effect structures with submicrometre linewidths (<0.3pm) have been fabricated in ferromagnetic thin films of Mn[sub 0.60]Al[sub 0.40] which are epitaxially grown on a GaAs substrate. The MnAl thin films exhibit a perpendicular remanent magnetisation and an extraordinary Hall effect with square hysteretic behaviour. The presence of two distinct stable readout states demonstrates the potential of using ultrasmall ferromagnetic volumes for electrically addressable, nonvolatile storage of digital information

Low-Threshold Electrically Pumps Vertical-Cavity Surface-Emitting Microlasers

Vertical-cavity electrically driven lasers with three GaInAs quantum wells and diameters of several μm exhibit room-temperature pulsed current thresholds as low as 1.3mA with 958 nm output wavelength

Vertical-cavity surface-emitting lasers: Design, growth, fabrication, characterization

The authors have designed, fabricated, and tested vertical-cavity surface-emitting lasers (VCSEL) with diameters ranging from 0.5 µm to >50 µm. Design issues, molecular beam epitaxial growth, fabrication, and lasing characteristics are discussed. The topics considered in fabrication of VCSELs are microlaser geometries; ion implementation and masks; ion beam etching packaging and arrays, and ultrasmall devices

Microlasers for photonic switching and interconnection

Vertical-cavity, surface-emitting lasers have great potential owing to their inherent two-dimensional geometry and very small gain nedium volumes which are essential to low threshold currents. Possible applications are optical switching/computing, photonic interconnection, high/low power laser sources, image processing, optical neural networks, etc. Driven by these high promises, there have been numerous reports on vertical cavity surface emitting laser diodes using InGaAs/GaAs/A1As, GaAs/AlGaAs structures. In this paper, we report characteristics of discrete InGaAs microlasers and monolithic two-dimensional arrays of microlasers. The advantages of optics for communications of data over distances longer than nearby gates have been argued previously. We proposed and demonstrated a photonic interconnect scheme using microlasers with planar optics which will be robust, accurate, and easily alignable