Anisotropic magnetoresistance in a 2DEG in a quasi-random magnetic field

We present magnetotransport results for a 2D electron gas (2DEG) subject to the quasi-random magnetic field produced by randomly positioned sub-micron Co dots deposited onto the surface of a GaAs/AlGaAs heterostructure. We observe strong local and non-local anisotropic magnetoresistance for external magnetic fields in the plane of the 2DEG. Monte-Carlo calculations confirm that this is due to the changing topology of the quasi-random magnetic field in which electrons are guided predominantly along contours of zero magnetic field.Comment: 4 pages, 6 figures, submitted to Phys. Rev.

Ballistic transport in random magnetic fields with anisotropic long-ranged correlations

We present exact theoretical results about energetic and dynamic properties of a spinless charged quantum particle on the Euclidean plane subjected to a perpendicular random magnetic field of Gaussian type with non-zero mean. Our results refer to the simplifying but remarkably illuminating limiting case of an infinite correlation length along one direction and a finite but strictly positive correlation length along the perpendicular direction in the plane. They are therefore ``random analogs'' of results first obtained by A. Iwatsuka in 1985 and by J. E. M\"uller in 1992, which are greatly esteemed, in particular for providing a basic understanding of transport properties in certain quasi-two-dimensional semiconductor heterostructures subjected to non-random inhomogeneous magnetic fields

Determining Curie temperatures in dilute ferromagnetic semiconductors: high Curie temperature (Ga,Mn)As

In this paper, we use simultaneous magnetometry and electrical transport measurements to critically examine ways in which the Curie temperature (TC) values have been determined in studies of dilute magnetic semiconductors. We show that, in sufficiently homogeneous samples, TC can be accurately determined from remanent magnetization and magnetic susceptibility and from the positions of the peak in the temperature derivative of the resistivity. We also show that the peak of the resistivity does not occur at TC, as illustrated by a (Ga,Mn)As sample for which the peak of the resistivity is at 21361K when TC is only 17861

Prospects of high temperature ferromagnetism in (Ga,Mn)As semiconductors

We report on a comprehensive combined experimental and theoretical study of Curie temperature trends in (Ga,Mn)As ferromagnetic semiconductors. Broad agreement between theoretical expectations and measured data allows us to conclude that T_c in high-quality metallic samples increases linearly with the number of uncompensated local moments on Mn_Ga acceptors, with no sign of saturation. Room temperature ferromagnetism is expected for a 10% concentration of these local moments. Our magnetotransport and magnetization data are consistnent with the picture in which Mn impurities incorporated during growth at interstitial Mn_I positions act as double-donors and compensate neighboring Mn_Ga local moments because of strong near-neighbor Mn_Ga-Mn_I antiferromagnetic coupling. These defects can be efficiently removed by post-growth annealing. Our analysis suggests that there is no fundamental obstacle to substitutional Mn_Ga doping in high-quality materials beyond our current maximum level of 6.2%, although this achievement will require further advances in growth condition control. Modest charge compensation does not limit the maximum Curie temperature possible in ferromagnetic semiconductors based on (Ga,Mn)As.Comment: 13 pages, 12 figures, submitted to Phys. Rev.

On the character of states near the Fermi level in (Ga,Mn)As: impurity to valence band crossover

We discuss the character of states near the Fermi level in Mn doped GaAs, as revealed by a survey of dc transport and optical studies over a wide range of Mn concentrations. A thermally activated valence band contribution to dc transport, a mid-infrared peak at energy hbar omega approx 200 meV in the ac- conductivity, and the hot photoluminescence spectra indicate the presence of an impurity band in low doped (<<1% Mn) insulating GaAs:Mn materials. Consistent with the implications of this picture, both the impurity band ionization energy inferred from the dc transport and the position of the mid-infrared peak move to lower energies and the peak broadens with increasing Mn concentration. In metallic materials with > 2% doping, no traces of Mn-related activated contribution can be identified in dc-transport, suggesting that the impurity band has merged with the valence band. No discrepancies with this perception are found when analyzing optical measurements in the high-doped GaAs:Mn. A higher energy (hbar omega approx 250 meV) mid-infrared feature which appears in the metallic samples is associated with inter-valence band transitions. Its red-shift with increased doping can be interpreted as a consequence of increased screening which narrows the localized-state valence-band tails and weakens higher energy transition amplitudes. Our examination of the dc and ac transport characteristics of GaAs:Mn is accompanied by comparisons with its shallow acceptor counterparts, confirming the disordered valence band picture of high-doped metallic GaAs:Mn material.Comment: 10 pages, 12 figure

Non-invasive detection of the evolution of the charge states of a double dot system

Coupled quantum dots are potential candidates for qubit systems in quantum computing. We use a non-invasive voltage probe to study the evolution of a coupled dot system from a situation where the dots are coupled to the leads to a situation where they are isolated from the leads. Our measurements allow us to identify the movement of electrons between the dots and we can also identify the presence of a charge trap in our system by detecting the movement of electrons between the dots and the charge trap. The data also reveals evidence of electrons moving between the dots via excited states of either the single dots or the double dot molecule.Comment: Accepted for publication in Phys. Rev. B. 4 pages, 4 figure

Experimental observation of the optical spin transfer torque

The spin transfer torque is a phenomenon in which angular momentum of a spin polarized electrical current entering a ferromagnet is transferred to the magnetization. The effect has opened a new research field of electrically driven magnetization dynamics in magnetic nanostructures and plays an important role in the development of a new generation of memory devices and tunable oscillators. Optical excitations of magnetic systems by laser pulses have been a separate research field whose aim is to explore magnetization dynamics at short time scales and enable ultrafast spintronic devices. We report the experimental observation of the optical spin transfer torque, predicted theoretically several years ago building the bridge between these two fields of spintronics research. In a pump-and-probe optical experiment we measure coherent spin precession in a (Ga,Mn)As ferromagnetic semiconductor excited by circularly polarized laser pulses. During the pump pulse, the spin angular momentum of photo-carriers generated by the absorbed light is transferred to the collective magnetization of the ferromagnet. We interpret the observed optical spin transfer torque and the magnetization precession it triggers on a quantitative microscopic level. Bringing the spin transfer physics into optics introduces a fundamentally distinct mechanism from the previously reported thermal and non-thermal laser excitations of magnets. Bringing optics into the field of spin transfer torques decreases by several orders of magnitude the timescales at which these phenomena are explored and utilized.Comment: 11 pages, 4 figure

Deterministic control of magnetic vortex wall chirality by electric field

Concepts for information storage and logical processing based on magnetic domain walls have great potential for implementation in future information and communications technologies. To date, the need to apply power hungry magnetic fields or heat dissipating spin polarized currents to manipulate magnetic domain walls has limited the development of such technologies. The possibility of controlling magnetic domain walls using voltages offers an energy efficient route to overcome these limitations. Here we show that a voltage-induced uniaxial strain induces reversible deterministic switching of the chirality of a magnetic vortex wall. We discuss how this functionality will be applicable to schemes for information storage and logical processing, making a significant step towards the practical implementation of magnetic domain walls in energy efficient computing

OSCE best practice guidelines—applicability for nursing simulations

Background: Objective structured clinical examinations (OSCEs) have been used for many years within healthcare programmes as a measure of students’ and clinicians’ clinical performance. OSCEs are a form of simulation and are often summative but may be formative. This educational approach requires robust design based on sound pedagogy to assure practice and assessment of holistic nursing care. As part of a project testing seven OSCE best practice guidelines (BPGs) across three sites, the BPGs were applied to an existing simulation activity. The aim of this study was to determine the applicability and value of the OSCE BPGs in an existing formative simulation. Methods: A mixed methods approach was used to address the research question: in what ways do OSCE BPGs align with simulations. The BPGs were aligned and compared with all aspects of an existing simulation activity offered to first-year nursing students at a large city-based university, prior to their first clinical placement in an Australian healthcare setting. Survey questions, comprised of Likert scales and free-text responses, used at other sites were slightly modified for reference to simulation. Students’ opinions about the refined simulation activity were collected via electronic survey immediately following the simulation and from focus groups. Template analysis, using the BPGs as existing or a priori thematic codes, enabled interpretation and illumination of the data from both sources.Results: Few changes were made to the existing simulation plan and format. Students’ responses from surveys (n = 367) and four focus groups indicated that all seven BPGs were applicable for simulations in guiding their learning, particularly in the affective domain, and assisting their perceived needs in preparing for upcoming clinical practice. Discussion: Similarities were found in the intent of simulation and OSCEs informed by the BPGs to enable feedback to students about holistic practice across affective, cognitive and psychomotor domains. The similarities in this study are consistent with findings from exploring the applicability of the BPGs for OSCEs in other nursing education settings, contexts, universities and jurisdictions. The BPGs also aligned with other frameworks and standards often used to develop and deliver simulations. Conclusions: Findings from this study provide further evidence of the applicability of the seven OSCE BPGs to inform the development and delivery of, in this context, simulation activities for nurses. The manner in which simulation is offered to large cohorts requires further consideration to meet students’ needs in rehearsing the registered nurse role

Maintenance and digital health control in smart manufacturing based on condition monitoring

Smart manufacturing is the modern form of manufacturing that utilises Industry 4.0 enablers for decision making and resources planning by taking advantage of the available data. Therefore, the state of the art technologies are either replaced or improved using the newly introduced manufacturing paradigm. In practice, condition monitoring is an on-going activity that preserves the manufacturing facility capability to deliver its production aims and decrease the production discontinuity as much as possible. Against this background, this paper discusses the state of the art condition monitoring and proposes a framework of fault detection and decision making at different levels namely component and station. The introduced framework relies on Virtual Engineering (VE) and Discrete Event Simulation (DES) in smart manufacturing environments. The application of the suggested methodology and its implementation is demonstrated in a case study of a battery module assembly line